Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Kazuhiro Ohkawa

Yuka Yamada

Masahiro Deguchi

Satoshi Yotsuhashi

Reiko Taniguchi

Hiroshi Hashiba

Disclosed is an anode electrode including a nitride semiconductor layer. This nitride semiconductor layer includes an AlGaN layer (0&#x3c;x&#x2266;0.25), an AlGaN layer (0&#x2266;y&#x2266;x), and a GaN layer. The AlGaN layer is interposed between the AlGaN layer and the GaN layer. The value of x is fixed in the thickness direction of the AlGaN layer. The value of y decreases from the interface with the AlGaN layer f toward the interface with the GaN layer. The AlGaN layer is irradiated with light having a wavelength of 360 nm or less so as to reduce carbon dioxide.

Photoelectrode used for carbon dioxide reduction and method for reducing carbon dioxide using the photoelectrode

A method for reducing carbon dioxide utilizes a carbon dioxide reduction device including a cathode chamber, an anode chamber, a solid electrolyte membrane, a cathode electrode and anode electrode. The cathode electrode includes copper or copper compound. The anode electrode includes a region formed of a nitride semiconductor layer where an AlGaN (0&#x3c;x&#x2266;1) layer and a GaN layer are stacked. The anode electrode is irradiated with a light having a wavelength of not more than 350 nanometers to reduce the carbon dioxide on the cathode electrode.

Method for reducing carbon dioxide

A method for reducing carbon dioxide utilizes a carbon dioxide reduction device including a cathode chamber, an anode chamber, a solid electrolyte membrane, a cathode electrode and anode electrode. The cathode electrode includes indium or indium compound. The anode electrode includes a region formed of a nitride semiconductor layer where an AlGaN (0&#x3c;x&#x2266;1) layer and a GaN layer are stacked. The anode electrode is irradiated with a light having a wavelength of not more than 350 nanometers to reduce the carbon dioxide on the cathode electrode.

Growing community of inventors

Saitama, Japan

Kazuhiro Ohkawa