Kyocera Corporation

Kazuhiro Nishizono

Kenichi Tajima

Katsuaki Masaki

Koichi Tanaka

Yoshiyuki Kawaguchi

Masato Fukudome

A light emitting element includes an optical semiconductor layer () obtained by sequentially laminating a first semiconductor layer (), a light emitting layer (), and a second semiconductor layer (); a first electrode layer () that is electrically connected to the first semiconductor layer (); and a second electrode layer () that is electrically connected to the second semiconductor layer (). The second electrode layer () includes a conductive reflecting layer () positioned on the second semiconductor layer (), and a conductive layer () having a plurality of through holes () that are positioned on the conductive reflecting layer () and penetrate therethrough in a thickness direction thereof.

Light emitting element and method for manufacturing light emitting element

A thermoelectric element formed of a sintered body of a semiconductor comprising at least two kinds of elements selected from the group consisting of Bi, Te, Se and Sb, and having a micro-Vickers' hardness of not smaller than 0.5 GPa. The thermoelectric element has a hardness of not smaller than 0.5 GPa, and exhibits a large resistance against deformation, and is not easily broken by deformation. As a result, breakage due to deformation is prevented and a highly reliable thermoelectric element is realized even when a shape factor which is a ratio of the sectional area of the thermoelectric element to the height thereof, is increased and even when the element density is increased.

Growing community of inventors

Kyoto, Japan

Kazuhiro Nishizono