Sharp Kabushiki Kaisha Corporation

Other

Fujitsu Corporation

Kazuhiro Natsuaki

Takahiro Takimoto

Masayo Uchida

Takashi Nakano

Kazuya Ishihara

Nobuyoshi Awaya

Naoki Fukunaga

Mitsuru Nakura

Toshihiko Fukushima

Isamu Ohkubo

Suguru Kawabata

Daisuke Honda

Yuji Asano

Masaaki Uchihashi

Takao Setoyama

Morio Katou

Masaru Kubo

Yukio Tamai

Shinobu Yamazaki

Hideo Wada

Shigeki Hayashida

An avalanche photodiode includes: a first semiconductor layer of a first conductivity type formed on a substrate of the first conductivity type; a second semiconductor layer of a second conductivity type formed under the first semiconductor layer; a third semiconductor layer of the first conductivity type formed in a shallow portion of the first semiconductor layer on the substrate, the third semiconductor layer having a higher concentration than an impurity concentration of the first semiconductor layer; a fourth semiconductor layer of the first conductivity type formed in a region in the first semiconductor layer immediately below the third semiconductor layer; a first contact electrically connected to the first semiconductor layer; and a second contact electrically connected to the second semiconductor layer. An impurity concentration of the fourth semiconductor layer is higher than that of the first semiconductor layer and is lower than that of the third semiconductor layer.

Avalanche photodiode

An avalanche photodiode includes a first-conductivity-type semiconductor layer; a first second-conductivity-type semiconductor layer; a second second-conductivity-type semiconductor layer; a third second-conductivity-type semiconductor layer; a fourth second-conductivity-type semiconductor layer; a fifth second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer and the second second-conductivity-type semiconductor layer form an avalanche junction. The first and third second-conductivity-type semiconductor layers are electrically connected together via the fourth second-conductivity-type semiconductor layer such that the semiconductor substrate and the first-conductivity-type semiconductor layer are electrically isolated from each other.

An avalanche photodiode according to the present invention includes, inside a substrate semiconductor layer having a first conductivity type and a uniform impurity concentration, a first semiconductor layer having the first conductivity type, a second semiconductor layer having a second conductivity type, a third semiconductor layer having the second conductivity type, a fourth semiconductor layer having the second conductivity type, a fifth semiconductor layer having the first conductivity type and formed at a position away from the third semiconductor layer in a lateral direction, a sixth semiconductor layer having the second conductivity type, a first contact, and a second contact. The first semiconductor layer is positioned just under the second semiconductor layer and the fifth semiconductor layer in contact therewith. An avalanche phenomenon is caused at a junction between the first semiconductor layer and the second semiconductor layer.

A photosensor includes a light emitting element that radiates light onto an object to be detected and a light receiving element that has a light-receiving surface for receiving light radiated from the light emitting element. An incident light regulation portion covering the light-receiving surface is provided on a path along which the light radiated from the light emitting element directed toward the light-receiving surface, and the incident light regulation portion transmits light having an incident angle less than a predetermined value and blocks light having the incident angle greater than or equal to the predetermined value among light incident on the light receiving element.

Photosensor

The image processing method includes a luminance value information obtaining step of obtaining effective radiance values from a subject, and an image generating step of generating a picture image as a set of unit regions each of which has a luminance value obtained by at least partially removing a regular reflection light component on a surface of the subject from the effective radiance values.

Image processing method and image processing device

An image capturing apparatus that includes a polarizing filter of a slit type in which polarization characteristics are improved is realized. A polarizing unit () of an image capturing apparatus () includes a first polarizer layer () and a second polarizer layer () that hold a dielectric layer () therebetween, and a plurality of slits () that are arranged at regular intervals in a predetermined direction are formed in each of the first polarizer layer () and the second polarizer layer (). A forming material of each of the first polarizer layer () and the second polarizer layer () and a forming material of a wiring layer that controls an operation of a light receiving unit () are selected from Al, Si, Cu, Au, Ag, Pt, W, Ti, Sn, In, Ga, Zn, and a compound or alloy that contains at least one of the foregoing.

Image capturing apparatus

Provided are an optical receiver that can realize a reduction in the variation of sensitivity in the ultraviolet light region and a reduction in noise in the visible light region and the infrared light region, a portable electronic device, and a method of producing an optical receiver. The first light-receiving device (PD) and the second light-receiving device (PD) of the optical receiver () are each constituted by forming a second conductivity-type N-type well layer (N_well) on a first conductivity-type P-type substrate (P_sub), forming a first conductivity-type P-type well layer (P_well) in the N-type well layer (N_well), and forming a second conductivity-type N-type diffusion layer (N) in the P-type well layer (P_well). The P-type substrate P_sub, the N-type well layer (N_well), and the P-type well layer (P_well) are electrically at the same potential or are short-circuited.

Optical receiver, portable electronic device, and method of producing optical receiver

A photoelectric conversion device includes: a first optical filter that has a first pattern periodically having a plurality of structures and is formed of a conductive material film disposed on a first photoelectric conversion element with an insulating film therebetween; and a first optical filter that has a second pattern periodically having a plurality of structures and is formed of a conductive material film disposed on a second photoelectric conversion element with the insulating film therebetween. The interval between the first pattern and the second pattern that are adjacent to each other is longer than a period of the structures in the first pattern and a period of the structures in the second pattern.

Photoelectric conversion device

A photoelectric conversion device capable of preventing anomalous transmission of light of a wavelength that is not supposed to be transmitted and reducing the half-width of a spectral waveform and a method for manufacturing such a photoelectric conversion device are provided. A first photoelectric conversion element is formed on a substrate. A first metal film having a plurality of openings arranged periodically or aperiodically is formed above the first photoelectric conversion element with insulating films interposed therebetween. A second metal film covering a part of the openings in the first metal film is provided.

Photoelectric conversion device and method for manufacturing same

An optical filter configured to transmit light of a predetermined wavelength includes a substrate; a first conductive thin film that is disposed on the substrate and has apertures extending through the first conductive thin film and arranged with a period of less than the predetermined wavelength; and a second conductive thin film at least a portion of which faces the apertures so as to be separated from the apertures.

Optical filter configured to transmit light of a predetermined wavelength

Provided is a semiconductor photodetector element which is reduced in manufacturing cost and improved in precision. The semiconductor photodetector element includes: a first photodiode formed in a P-type silicon substrate; a second photodiode formed in the P-type silicon substrate and has the same structure as that of the first photodiode; a color filter layer formed above the first photodiode from a green filter; a color filter layer formed of a black filter above the second photodiode; and an arithmetic circuit portion which subtracts a detection signal of the second photodiode from a detection signal of the first photodiode.

Semiconductor photodetector element and semiconductor device

A photodiode includes a first conductivity type semiconductor substrate or a first conductivity type semiconductor layer; a second conductivity type semiconductor layer provided on the first conductivity type semiconductor substrate or the first conductivity type semiconductor layer; an anti-reflection film provided on a surface of a portion of the second conductivity type semiconductor layer which is in a light receiving area; a first conductive layer provided in an area in the vicinity of the light receiving area; and a passivation layer provided on the first conductive layer. Light incident on the photodiode is detected by a junction of the one of the first conductivity type semiconductor substrate and the first conductivity type semiconductor layer, and the second conductivity type semiconductor layer. The area in the vicinity of the light receiving area includes a window area having an opening in the passivation layer for partially exposing the first conductive layer.

Photodiode device including window defined in passivation layer for removing electrostatic charge

A method for producing a semiconductor device with a built-in light receiving element is provided. The device comprises a light receiving element region for receiving and converting an optical signal to an electric signal, the light receiving element region being provided on a substrate. The method comprises the steps forming an anti-reflection film in the light receiving element region on the substrate, and forming a protection film, the protection film serving as an etch stop film in a subsequent etching step.

Semiconductor device with built-in light receiving element, production method thereof, and optical pickup incorporating the same

A first layer is formed on an underlying substrate having a surface layer made of semiconductor of a first conductivity type. The first layer is made of semiconductor having a resistance higher than that of the surface layer. A first impurity diffusion region of a second conductivity type is formed in a partial surface region of the first layer. The first impurity diffusion region does not reach the surface of the underlying substrate. A second impurity diffusion region of the first conductivity type is disposed in the first layer and spaced apart from the first impurity diffusion region. The second impurity diffusion region reaches the surface of the underlying substrate. A separation region is disposed between the first and second impurity diffusion regions. The separation region comprises a trench formed in the first layer and dielectric material disposed at least in a partial internal region of the trench.

Semiconductor device with reduced parasitic capacitance between impurity diffusion regions

A corrosion-resistant conductive layer (TiW layer) formed of a corrosion-resistant material is formed to extend from a bonding pad portion to an interconnection portion of a light receiving element. A semiconductor laser device according to the present invention includes the light receiving element.

Growing community of inventors

Sakai, Japan

Kazuhiro Natsuaki