Sumco Corporation

Sumco Techxiv Corporation

Sumco Techxiv Kabushiki Kaisha

Kazuhiro Narahara

Hirotaka Kato

Koichiro Hayashida

Sumihisa Masuda

Haku Komori

Yuichi Nasu

Masayuki Tsuji

Hideyuki Matsunaga

Hirotaka Katou

Motonori Nakamura

Yoshinobu Mori

Takeshi Masuda

Hidenori Kobayashi

Provided is an epitaxial growth apparatus which makes it possible to prevent the production of debris between a preheat ring and a lower liner without fracturing the preheat ring. The epitaxial growth apparatus includes: a chamber; an upper liner and a lower liner that are disposed on an inner wall of the chamber; a susceptor being provided inside the chamber; and a preheat ring that is disposed on a supporting portion protruding in an opening of the lower liner and is disposed on the outer circumference of the susceptor. The preheat ring is not supported by the supporting portion in at least a part of a region that is right above a region where the semiconductor wafer passes in a transfer path in which the semiconductor wafer is loaded into the chamber to be set on the susceptor.

Epitaxial growth apparatus and method of producing epitaxial wafer

Provided is a susceptor which makes it possible to increase the circumferential flatness uniformity of an epitaxial layer of an epitaxial silicon wafer. A susceptoris provided with a concave counterbore portion on which a silicon wafer W is placed, and the radial distance L between the center of the susceptor and an opening edge of the counterbore portion varies at 90° periods in the circumferential direction. Meanwhile, when the angle at which the radial distance L is minimum is 0°, the radial distance L is a minimum value Lat 90°, 180°, and 270°; and the radial distance L is a maximum value Lat 45°, 135°, 225°, and 315°. Accordingly, the pocket width Lalso varies in conformance with the variations of the radial distance L. The opening edgeC describes four elliptical arcs being convex radially outward when the susceptoris viewed from above.

Susceptor, epitaxial growth apparatus, method of producing epitaxial silicon wafer, and epitaxial silicon wafer

A vapor deposition apparatus includes a disc-shaped susceptor and a susceptor support member that supports and rotates the susceptor. The susceptor has a plurality of fitting grooves. The susceptor support member is provided with a plurality of support pins to be fitted in the respective plurality of fitting grooves. The fitting grooves each have an inclined portion that relatively moves the support pin with respect to the fitting groove in a circumferential direction of the susceptor with the support pin kept in contact by virtue of a self-weight of the susceptor and a positioning portion that positions the support pin relatively moved by the inclined portion at a specific position in the circumferential direction. The inclined portion and the positioning portion are formed continuously in a radial direction of the susceptor.

Vapor deposition device and method for manufacturing epitaxial silicon wafer

Provided is a susceptor which makes it possible to increase the circumferential flatness uniformity of an epitaxial layer of an epitaxial silicon wafer. A susceptoris provided with a concave counterbore portion on which a silicon wafer W is placed, and the radial distance L between the center of the susceptor and an opening edge of the counterbore portion varies at 90&#xb0; periods in the circumferential direction. Meanwhile, when the angle at which the radial distance L is minimum is 0&#xb0;, the radial distance L is a minimum value Lat 90&#xb0;, 180&#xb0;, and 270&#xb0;; and the radial distance L is a maximum value Lat 45&#xb0;, 135&#xb0;, 225&#xb0;, and 315&#xb0;. Accordingly, the pocket width Lalso varies in conformance with the variations of the radial distance L. The opening edgeC describes four elliptical arcs being convex radially outward when the susceptoris viewed from above.

A method of manufacturing an epitaxial wafer in which an epitaxial layer is grown over a main surface of a silicon wafer placed substantially horizontally on a susceptor is provided. The method comprises: a growing step of the epitaxial layer; and a cooling step of cooling the epitaxial wafer having the epitaxial layer. The cooling step comprises: a wafer measurement step of measuring a temperature of the epitaxial wafer; a susceptor measurement step of measuring a temperature of the susceptor; and a control step of controlling a heater capable of heating at least the susceptor or the epitaxial wafer such that difference between a temperature of the epitaxial wafer and a temperature of the susceptor is within a predetermined range.

Method and apparatus for manufacturing epitaxial silicon wafer

The present invention provides a method of producing an epitaxial wafer having a highly flat rear surface without polishing top and rear surfaces of the epitaxial wafer after forming an epitaxial film. A method of producing an epitaxial waferaccording to the present invention comprises a step of preparing a semiconductor waferhaving a beveled portionformed on its end portion, a first surface, a second surfaceopposite to the first surface, and edgesandon both of the first surfaceand the second surface, the each edgeandis boundary with the beveled portion; a step of processing of rolling off an outer peripheral portionof the first surfaceto form a roll-off region, the outer peripheral portionis extending outward of the wafer from a predetermined position P inner than the position of the edgeonthe first surface; and a step of forming a first epitaxial filmon the second surface

Method of producing epitaxial wafer and the epitaxial wafer having a highly flat rear surface

Provided is a method of producing an epitaxial silicon wafer which has high flatness at the peripheral portion and an epitaxial silicon wafer obtained by the method. In the method of producing an epitaxial silicon wafer, an epitaxial layer is formed on the top surface of a silicon wafer with a chamfered end having a width of 200 &#x3bc;m or less, which surface has a surface orientation of the (100) plane or the (110) plane.

Method of producing epitaxial silicon wafer and epitaxial silicon wafer

A method of forming an epitaxial layer to increase flatness of an epitaxial silicon wafer is provided. In particular, a method of controlling the epitaxial layer thickness in a peripheral part of the wafer is provided. An apparatus for manufacturing an epitaxial wafer by growing an epitaxial layer with reaction of a semiconductor wafer and a source gas in a reaction furnace comprising: a pocket in which the semiconductor wafer is placed; a susceptor fixing the semiconductor; orientation-dependent control means dependent on a crystal orientation of the semiconductor wafer and/or orientation-independent control means independent from the crystal orientation of the semiconductor wafer, wherein the apparatus may improve flatness in a peripheral part of the epitaxial layer.

Method of manufacturing epitaxial silicon wafer and apparatus therefor

A method and an apparatus for manufacturing a semiconductor wafer are provided for improving a quality of the semiconductor wafer, and further, for improving a quality of a semiconductor device manufactured by using the semiconductor wafer, by preventing warping from being generated at a stage of a placing step, at the time of performing heat treatment to a semiconductor wafer substrate. The placing process is performed by a placing means so that a time when a temperature difference between a wafer front surface temperature and a wafer rear surface temperature becomes maximum, and a time when warping is generated in the wafer are prior to a time when the wafer is brought into contact with lift pins or a susceptor (i.e., a time after the temperature is at an upper limit value of an infrared temperature region at 600&#xb0; C.), and the lift pins are brought into contact with the wafer rear surface.

Method and apparatus for manufacturing semiconductor wafer

In a manufacturing apparatus for manufacturing an epitaxial wafer with a wafer being mounted substantially concentrically with a susceptor, a center rod is provided to extend in an up-and-down direction on a side of a non-mounting surface of the susceptor so that its upper end is adjacent to the center of the susceptor. With this arrangement, part of radiation light irradiated toward the susceptor is diffusely reflected by the center rod before reaching the central portion of the susceptor, thereby reducing the amount of the radiation light irradiated to the central portion of the susceptor as well as lowering the temperature of the portion. Since the center rod and the susceptor are not in surface contact, the center rod does not take the heat from the susceptor, thereby suppressing the temperature from decreasing locally at the central portion of the susceptor.

Susceptor device, manufacturing apparatus of epitaxial wafer, and manufacturing method of epitaxial wafer

A role of a bottom face of a silicon wafer is identified in a manufacturing process of the silicon wafer. And preferable characteristic feature is also identified. In order to obtain the above characteristic feature, a process method to be implemented into the method of manufacturing a normal silicon wafer is provided. For example, the method comprises: a pre-cleaning process for cleaning the silicon wafer having top and bottom faces processed to a mirror finish; and a rapid thermal process or an epitaxial growth process, wherein the pre-cleaning process comprises a hydrofluoric acid (HF) process and a subsequent pure water (DIW) process.

Method of manufacturing epitaxial silicon wafer

An oxide filmon the surface of the substrateand an inner wall oxide filmin a COPexposed to the surface of the substrateare removed by cleaning the surface of the substratewith a hydrofluoric acid solution. The substrateis then cleaned with ozone water, thereby forming an oxide filmon the surface of the substrate. Thereafter the substrateis subjected to a heat treatment for removing the oxide filmon the surface of the substrate. Consequently, the COPon the surface of the substrateis planarized to be eliminated from the substrate surface. Thereafter an epitaxial layeris formed on the surface of the substrate

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Nagasaki, Japan

Kazuhiro Narahara