Asahi Kasei Kogyo Kabushiki Kaisha

Fujitsu Toshiba Mobile Communications Limited

Asahi Kasei Emd Corporation

Asahi Kasei Kabushiki Kaisha

Kazuhiro Nagase

Ichiro Shibasaki

Naohiro Kuze

Masaaki Kurihara

Motoaki Iwaya

Edson Gomes Camargo

Akira Yoshikawa

Yoshitaka Moriyasu

Koichiro Ueno

Yuichi Kanayama

Tatsuro Iwabuchi

Saki Ushida

Tomohiro Kosaka

An MSM ultraviolet ray receiving element has a low dark state current value and a good photosensitivity. The MSM ultraviolet ray receiving element has a first nitride semiconductor layer on a substrate, a second nitride semiconductor layer on the first nitride semiconductor layer, and first and second electrodes on the second nitride semiconductor layer. The first nitride semiconductor layer contains AlGaN (0.4&#x2264;X&#x2264;0.90). The second nitride semiconductor layer contains AlGaN with a film thickness t (nm) satisfying 5&#x2264;t&#x2264;25. The first electrode and the second electrode contain a material containing at least three elements of Ti, Al, Au, Ni, V, Mo, Hf, Ta, W, Nb, Zn, Ag, Cr, and Zr. Al composition ratios X and Y and a film thickness t satisfy &#x2212;0.009&#xd7;t+X+0.22&#x2212;0.03&#x2264;Y&#x2264;&#x2212;0.009&#xd7;t+X+0.22+0.03.

MSM ultraviolet ray receiving element, MSM ultraviolet ray receiving device

A portable terminal device for communicating other terminal device includes: a display configured to display an image data; a transmitting unit configured to transmit the image data to the other terminal device; a receiving unit configured to receive a reception image data from the other terminal device; a display control unit configured to allow an application image data to be displayed by a predetermined application program to be displayed on the display and either one of the image data and the reception image data; a selecting unit configured to select either one of the image data and the application image data displayed on the display; and a transmission control unit configured to allow the transmitting unit to transmit the image data or the application image data selected by the selecting unit to the other terminal device.

Portable terminal device

A cellular phone communicates data with an information provision apparatus connected via a packet network. A control unit obtains an information management apparatus identifier for identifying an information management apparatus within the packet network which is an intermediation at the time of the data communication carried out with the information provision apparatus further connected via an external network among the information provision apparatuses, determines whether the identifier added to the data at the time of the data communication is coincident with the information management apparatus identifier, and calculates a data amount at the time of the data communication carried out with the information provision apparatus connected via the external network. A storage unit stores the calculated data amount.

Cellular phone

The present invention provides an optical device that is miniature, is highly sensitive and has a simplified package, and a manufacturing method thereof with high production efficiency and high reliability. The present invention is an optical device comprising: a photoelectric conversion element () having at least one photoelectric conversion portion () which is formed on a substrate (); a sealing material (); and a connection terminal (). The optical device comprises an optical window which is an interface between the photoelectric conversion element () and an outside of the optical device; and an aperture () formed in the sealing materialand whose bottom face is the optical window. An entire face of the optical window is exposed to the outside. An optical adjustment element () may be formed on the interface. In this case, the interface between the optical adjustment element () and the outside is the optical window.

Optical device and a method of manufacturing an optical device having a photoelectric conversion element and an optical adjustment element

An infrared sensor IC and an infrared sensor, which are extremely small and are not easily affected by electromagnetic noise and thermal fluctuation, and a manufacturing method thereof are provided. A compound semiconductor that has a small device resistance and a large electron mobility is used for a sensor (), and then, the compound semiconductor sensor () and an integrated circuit (), which processes an electrical signal output by the compound semiconductor sensor () and performs an operation, are arranged in a single package using hybrid formation. In this manner, an infrared sensor IC that can be operated at room temperature can be provided by a microminiature and simple package that is not conventionally produced.

Infrared sensor IC, and infrared sensor and manufacturing method thereof

Semiconductor sensors and method for fabricating the same

A field effect transistor including a first compound semiconductor layer (2) serving as a buffer layer, an InAs layer (3) serving as a channel layer, and a second compound semiconductor layer (4) serving as an electron donor layer or a barrier layer which are, in this order, deposited on a semiconductor substrate (1) having a lattice constant different from that of InAs. The first compound semiconductor layer (2) is formed from a material selected from AlGaAsSb, AlGaPSb, AlInAsSb and AlInPSb which are substantially in lattice matching with InAs and have a bandgap greater than that of InAs, and hence the first layer (2) has a simple structure. An FET having excellent high frequency characteristics can be obtained on the substrate (1) having a lattice constant different from that of the InAs layer (3).

Field effect transistor

Growing community of inventors

Tokyo, Japan

Kazuhiro Nagase