Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Kazuhiro Morishita

Katsumi Satoh

Shigeru Hasegawa

Katsumi Sato

Shinji Koga

Yukimasa Hayashida

Futoshi Tokunoh

Ryutaro Date

Kenji Oota

Ryo Tsuda

Goro Yasutomi

Kazunori Taguchi

Masuo Koga

Takeshi Kitani

Noritoshi Hirano

Kazuhisa Ide

Kathumi Satoh

A base plate, and a plurality of unit structures formed on the base plate are provided. Each of the unit structures including an insulating substrate fixed on the base plate, a metal pattern formed on the insulating substrate, a semiconductor element electrically connected to the metal pattern, and a main electrode having an upper end portion exposed to the outside and a lower end portion connected to a peripheral portion of the metal pattern closest to an outer edge of the base plate.

Semiconductor device

It is an object of the present invention to provide a semiconductor module that reduces an excessive stress on a sealed object due to the expansion and contraction of a sealing gel to thus improve the reliability. A semiconductor module according to the present invention includes: a semiconductor element bonded to a metal pattern on an insulating substrate contained in a case; a sealing gel sealing the insulating substrate and the semiconductor element within the case; and a sealing-gel-expansion suppressing plate disposed in the upper portion of the sealing gel to be at least partially in contact with the sealing gel. The sealing-gel-expansion suppressing plate includes a surface facing the sealing gel and inclined to the upper surface of the sealing gel.

Semiconductor module

Each of semiconductor module includes a semiconductor chip, a case surrounding the semiconductor chip, and a main electrode connected to the semiconductor chip and led out to an upper surface of case. A connecting electrode is connected and fixed to the main electrodes of the adjacent semiconductor modules. The connecting electrode is formed only of a metal plate.

According to the present invention, a switching element includes a substrate, a first gate pad formed on the substrate, a second gate pad formed on the substrate, a first resistor portion formed on the substrate, the first resistor portion connecting the first gate pad and the second gate pad to each other, and a cell region formed on the substrate and connected to the first gate pad. Thus, measurement of the gate resistance value and selection from gate resistances of the switching element can be performed after the completion of the gate-resistor-incorporating-type switching element.

Switching element, semiconductor device, and semiconductor device manufacturing method

A power semiconductor device module includes: a base plate; an insulating substrate mounted on the base plate; and a diode chip mounted on the insulating substrate, wherein the insulating substrate has an upper surface electrode layer disposed on an upper main surface and a lower surface electrode layer disposed on a lower main surface, the diode chip is joined onto the upper surface electrode layer, the lower surface electrode layer is joined onto the upper main surface of the base plate, and a thermal resistance reducing section that reduces thermal resistance is provided in lower surface electrode layer or the base plate of a portion corresponding to a place immediately below the diode chip.

Power semiconductor device module

In order to reduce a turn-on time of a power switching semiconductor device at a low cost, a first main electrode divided into a plurality of segments forming segment rows of a multi-concentric circle and a control electrode surrounding the segments are formed on a front major surface of a semiconductor substrate, and a second electrode is formed on a rear major surface thereof, and a turn-on operation is performed between the first main electrode and the second main electrode with a control signal inputted from the control electrode, specifying a relationship between a width of a segment and a distance between adjacent segments, and others.

Power-switching semiconductor device

A semiconductor device having a supporting member that reduces a resonance phenomenon. A pair of reinforcing members is fixed on a gate drive substrate with spacers interposed there between and upright portions of the pair of reinforcing members are fastened with screws on a side wall of a cathode flange. A spacer is fixed on the gate drive substrate and a projection of the spacer is inserted in an engaging member fixed on the bottom of the cathode fin electrode and thus fixed on the bottom of the cathode fin electrode. The pair of upright portions as the first and second supporting points and the projection of the spacer as the third supporting point stably support the gate drive substrate on the cathode fin electrode without freedom of rotation at the three positions arranged to surround an opening.

Semiconductor device with multiple supporting points

An object is to provide a semiconductor device which is free from such voltage oscillation as may cause malfunction of peripheral equipment. In a semiconductor device having a pin structure, the impurity concentration gradient in an n layer ( ) serving as a buffer layer is set equal to or less than 2&times;10 cm . Then, when a reverse bias voltage is applied and a depletion layer reaches the n layer ( ), the expansion of the depletion layer is prevented from rapidly stopping and the voltage oscillation can be suppressed.

The present invention relates to a reverse conducting thyristor device. It aims at preventing heat generated by power loss from filling end field protective rubber and at simplifying a sheath storing a semiconductor substrate. In a reverse conducting thyristor device according to this invention, a self-extinguishing thyristor region is arranged on an inner region of the semiconductor substrate, a reverse conducting diode region whose outer periphery is completely enclosed with an isolation region is arranged on its outer region by at least one, and an external takeout gate electrode region is further arranged on the outermost peripheral region of the semiconductor substrate on the outer part thereof. Thus, a gate electrode provided on a surface of a gate part layer of the self-extinguishing thyristor region is connected with an external takeout gate electrode formed along the outermost periphery of the substrate through a gate wiring pattern formed on a surface of a connecting region.

Reverse conducting thyristor device, pressure-connection type semiconductor device and semiconductor substrate

To make it possible to control turn-off operation even after switch over to transistor operation after commutation of the main current from cathode electrode to gate electrode in turn-off operation, a semiconductor device according to the invention comprises a first electrode, a first region of first conduction type provided on the first electrode, a second region of second conduction type provided on the first region, a third region and a fourth region of first conduction type respectively provided on the second region with a predetermined distance from each other to allow formation of a channel region on the second region, a fifth region of second conduction type provided on the third region, a second electrode provided on the fifth region, a gate electrode established in contact with the fourth region and a control electrode provided on a separate region between the third and fourth regions on the second region to control the channel region through an insulation layer.

Semiconductor device and driving method thereof

To suppress spike voltage generated at turn-off operation, a semiconductor device according to the invention comprises a first region composed of a first conductor, a second region composed of a second conductor formed on top of the first region, a third region composed of the first conductor formed on top of the second region and a fourth region composed of the second conductor formed on top of the third region. The second region is comprised of a depletion-layer forming auxiliary layer having a short lifetime and formed in the vicinity of the third region, a tail-current suppression layer having a shorter lifetime than that of the depletion-layer forming auxiliary layer and formed in the vicinity of the first region and a depletion-layer forming suppression layer having a longer lifetime than that of the depletion-layer forming auxiliary layer and formed between the depletion-layer forming auxiliary layer and the tail-current suppression layer.

The present invention relates to a diode, and has an object to simultaneously implement a high di/dt capability, a low reverse recovery loss and a low forward voltage and to suppress generation of voltage oscillation. In order to achieve the above-mentioned object, life time killers are selectively introduced into a semiconductor substrate (,) comprising a P layer (,), an N,layer (,) and an N,layer (,). A density of the introduced life time killers is the highest in a first region (,) adjacent to the P layer (,), and is the second highest in a second region (,) in the N,layer (,). The life time killers are not introduced into a third region (,). Accordingly, a life time in the N,layer (,) is expressed by the first region (,)<the second region (,)<the third region (,). The second region (,) and the third region (,) are adjacent to the P layer (,). In addition, the second region (,) annularly surrounds the third region (,).

Diode

A compression-type semiconductor device comprises a silicon substrate in which crystal orientation between main faces opposite to each other is not larger than &lt;1,0,0&gt; .+-.27.5.degree.; cathode and gate electrodes formed on one of the main faces of the silicon substrate; an anode electrode formed on the other of the main faces of the silicon substrate; a cathode thermal compensation plate for the cathode and gate electrodes; and an anode thermal compensation plate for the anode electrode.

Compression-type power semiconductor device

A reverse conducting gate turn-off thyristor (RC-GTO) includes, in the same semiconductor body, a gate turn-off thyristor, a reverse current diode, and a semiconductor isolation region between the gate turn-off thyristor and the reverse current diode and having a first conductivity type semiconductor layer adjacent an anode electrode and spaced apart second conductivity type high-dopant-impurity-concentration regions opposite the anode electrode.

Growing community of inventors

Tokyo, Japan

Kazuhiro Morishita