Hitachi-kokusai Electric Inc.

Kokusai Electric Corporation

Kazuhiro Morimitsu

Kazuyuki Toyoda

Tetsuo Yamamoto

Tadashi Takasaki

Takafumi Sasaki

Shun Matsui

Yukitomo Hirochi

Masanao Fukuda

Naofumi Ohashi

Eisuke Nishitani

Takatomo Yamaguchi

Taketoshi Sato

Akihiro Sato

Kenji Shirako

Tatsuhisa Matsunaga

Tsukasa Kamakura

Hideharu Itatani

Daisuke Hara

Akinori Tanaka

Sadao Nakashima

Kouichi Noto

Hidehiro Yanagawa

Kenji Ono

Takeshi Itoh

Ikuo Hirose

Masanori Kaneko

Masaki Matsushima

There is provided a technique of manufacturing a semiconductor device, including: by a processing performing part, processing a substrate based on setting parameter corresponding to process recipe stored in a controller; by a first transceiver, transmitting measurement value of the processing performing part to the controller; by the controller, causing a learning part to perform machine learning process on the measurement value received from the first transceiver as learning data; by the controller, after the act of causing the learning part to perform the machine learning process, generating update data for updating the setting parameter; by the controller, causing an arithmetic part to generate update parameter for updating the setting parameter based on the update data; by the controller, causing a second transceiver to transmit the update parameter to the first transceiver; and by the updating part, updating the setting parameter based on the update parameter received from the controller.

Substrate processing apparatus and recording medium

There is provided a technique that includes supplying a first process gas to a process space where a substrate is accommodated, and using an inert gas as a carrier gas of the first process gas; and supplying plasma of a second process gas to the process space where the substrate is accommodated, and using an active auxiliary gas as a carrier gas of the second process gas.

Method of manufacturing semiconductor device

There is provided a method of manufacturing a semiconductor device by processing a substrate by alternately supplying a first processing gas and a second processing gas plasmatized by a plasma unit to a processing container. The method includes: starting a supply of an electric power to plasmatize the second processing gas to the plasma unit without supplying the second processing gas to the plasma unit; and starting a supply of the second processing gas with the electric power being supplied to the plasma unit.

Substrate processing apparatus, non-transitory computer-readable recording medium and method of manufacturing semiconductor device

A substrate processing apparatus includes: a process chamber configured to process a substrate; a substrate mounting stand installed in the process chamber and configured to hold the substrate; a heating part configured to heat the substrate; a gas rectifying part configured to supply a process gas to the substrate; a sealing part installed in the gas rectifying part; a heat insulating part installed between the sealing part and an upstream side surface of the gas rectifying part; and a first pressure adjusting part connected to the heat insulating part.

Substrate processing apparatus

A structure for constituting a process chamber in which a plurality of substrates is processed by reacting a predetermined precursor gas therein includes an outer tube having a cylindrical shape with an upper end portion closed and a lower end portion opened, and an inner tube, installed within the outer tube, including a first exhaust slit and a second exhaust slit through which the predetermined precursor gas is exhausted, the first exhaust slit located in a substrate arrangement region in which the plurality of substrates are arranged, and the second exhaust slit located in a region lower than the substrate arrangement region.

Reaction tube, substrate processing apparatus, and method of manufacturing semiconductor device

Generation of byproducts is inhibited in a buffer space even in a single-wafer-type apparatus using the buffer space. A method of manufacturing a semiconductor device includes (a) loading a substrate into a process chamber; (b) supplying a first-element-containing gas via a buffer chamber of a shower head to the substrate placed in the process chamber; (c) supplying a second-element-containing gas to the substrate via the buffer chamber; and (d) performing an exhaust process between (b) and (c), wherein (d) includes: exhausting an atmosphere of the buffer chamber; and exhausting an atmosphere of the process chamber after exhausting the atmosphere of the buffer chamber.

Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium

There are provided a substrate processing apparatus capable of suppressing leakage of magnetic field during processing of a substrate. The substrate processing apparatus of the present invention includes: a reaction tube having a processing chamber provided therein to process a substrate; an induction heating unit installed outside of the reaction tube to accommodate the reaction tube, wherein the induction heating unit is configured to electromagnetically induction-heat the processing chamber by generating a magnetic field; an accommodation tube installed outside of the induction heating unit to accommodate the induction heating unit, wherein the accommodation tube accommodates the reaction tube and the induction heating unit in an air-tight manner; a shielding unit made of a conductive material installed to surround an outside of the accommodation tube; and an inert gas supply unit installed in a gap between the reaction tube and the accommodation tube where the induction heating unit is installed, wherein the inert gas supply unit is configured to supply an inert gas into the gap.

Substrate processing apparatus including shielding unit for suppressing leakage of magnetic field

Provided is a heat treatment apparatus that can form films having a uniform thickness on a plurality of substrates. The heat treatment apparatus comprises a process chamber configured to grow silicon carbide (SiC) films on wafers, a boat configured to hold a plurality of wafers in a state where the wafers are vertically arranged and approximately horizontally oriented so as to hold the wafers in the process chamber, a heating unit installed in the process chamber, and a gas supply nozzle configured to supply a reaction gas. The heating unit comprises a susceptor configured to cover at least a part of the boat, and a susceptor wall disposed between the boat and the susceptor.

Heat treatment apparatus

A method of manufacturing a semiconductor device includes supplying a precursor gas to a substrate; supplying a reaction gas to a plasma generation region; supplying high frequency power to the plasma generation region; and generating plasma of the reaction gas by adjusting a pressure of the plasma generation region to a first pressure before the reaction gas is supplied and adjusting the pressure of the plasma generation region to a second pressure lower than the first pressure while the reaction gas and the high frequency power are supplied.

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a substrate processing apparatus that alternately supplies a first processing gas and a second processing gas in plasma state to a processing container and processes a substrate. The apparatus includes a first gas supply system configured to supply the first processing gas, a second gas supply system configured to supply the second processing gas, a plasma unit arranged at an upstream side of the processing container to plasmatize at least the second processing gas, and a controller configured to control the first gas supply system and the second gas supply system to alternately supply the first processing gas and the second processing gas and control the plasma unit to apply an electric power to plasmatize the second processing gas before a supply of the second processing gas starts.

A nonuniform portion of a film thickness on a substrate owing to effects of a support column, a substrate mounting portion, and the like which constitute a substrate holder is eliminated, and uniformity of the film thickness of the substrate is enhanced. A substrate processing apparatus houses plural wafers (substrates) held on a boat (substrate holder) in a processing chamber, supplying processing gas to the heated processing chamber, thereby performing film-forming processing for the wafers. The boat includes: at least three support columnsprovided substantially vertically; plural wafer support portions(substrate mounting portions) which are provided at multi-stages on the support columns and mount the plural wafers substantially horizontally at a predetermined interval; and plural ring-like platesarranged on the support columns, and provided substantially horizontally at a predetermined interval with respect to the wafers supported on the wafer support portions

Substrate processing apparatus, substrate holder, and manufacturing method of semiconductor device

A semiconductor device producing apparatus is disclosed. The apparatus includes a carrier-holding stage for placing a carrier; first, second and third stages each for holding first and second boats one at a time, each boat holding one or more substrates; a boat transfer mechanism for transferring the boats among the first, second and third stages; and a substrate transfer mechanism for transferring the substrate(s) from the carrier to the boat held by the first stage. A controller controls the first stage, the boat transfer mechanism and the substrate transfer mechanism so that the boat transfer mechanism transfers one of the boats from the second stage to the first stage, the substrate transfer mechanism then transfers the substrate(s) from the carrier to the boat held by the first stage, and the first stage then moves the boat into the processing chamber for processing.

Semiconductor device producing apparatus and producing method of semiconductor device

A heat treatment apparatus includes a vertically disposed process tube defining a reaction chamber therein; a main heater for heating the reaction chamber, the main heater being disposed outside of the process tube; a boat for holding a plurality of wafers, the boat being loaded into and unloaded from the reaction chamber; and a boat rotating device for rotating the boat. The boat rotating device is provided with a rotatable hollow shaft assembly and a fixed shaft coaxially disposed inside the rotatable hollow shaft assembly. A sub-heater is attached to an upper end of the fixed shaft, and the boat and an insulating portion are disposed on the rotatable hollow shaft assembly.

Growing community of inventors

Toyama, Japan

Kazuhiro Morimitsu