Showa Denko K.k.

Kazuhiro Mitani

Takashi Udagawa

Ryouichi Takeuchi

Katsuki Kusunoki

Wataru Nabekura

Takaharu Hoshina

Nobuo Uotani

Yuji Itoh

Kasumi Nakamura

Takayuki Kamemura

Teruyuki Kobayashi

Yasuhiro Hayakawa

A Group III nitride semiconductor light-emitting device having a stacked structure includes a transparent crystal substrate having a front surface and a back surface, a first Group III nitride semiconductor layer of first conductive type formed on the front surface of the transparent crystal substrate, a second Group III nitride semiconductor layer of second conductive type which is opposite from the first conductive type, a light-emitting layer made of a Group III nitride semiconductor between the first and second Group III nitride semiconductor layers, and a plate body including fluorescent material, attached onto the back surface of the transparent crystal substrate.

Group III nitride semiconductor light-emitting device, forming method thereof, lamp and light source using same

Reflector for lighting fixture

A Group III nitride semiconductor light-emitting device includes a stacked structureformed on a crystal substrate () to be removed from it and including two Group III nitride semiconductor layersandhaving different electric conductive types and a light-emitting layerwhich is stacked between the two Group III nitride semiconductor layers and which includes a Group III nitride semiconductor, and a plate bodymade of material different from that of the crystal substrate and formed on a surface of an uppermost layer which is opposite from the crystal substrate that is removed from the stacked structure.

Group III nitride semiconductor light-emitting device and method of producing the same

A small-sized semiconductor light-emitting device of high emission directivity and high output is provided. A portion of a light extraction section of a semiconductor light-emitting device including a pn-junction portion is covered with a light-shielding substance of low conductivity. The electrical resistance of the light-shielding substance is 10&#x3a9;m or higher, and the substance contains powder of at least one species selected from metals and pigments. The powder of metal contains at least one species selected from among Al, Cu, Ag, Au, Pt, Ti, Ni, Sn, Pb, Mg, Zn, Fe, Co, and Cr. The powder is a plate-like powder having a thickness falling within a range of 0.001-10 &#x3bc;m and a length falling within a range of 0.01-100 &#x3bc;m.

Semiconductor light-emitting device

A semiconductor light-emitting device includes a semiconductor substrate that has a rear surface formed with a first electrode, a semiconductor layer that includes a light-emitting portion and is formed on the semiconductor substrate, a plurality of dispersed electrodes that are individually formed on a part of the surface of the semiconductor layer to make ohmic contact with the semiconductor layer, a transparent conductive film that covers the surface of the semiconductor layer and the dispersed electrodes to electrically conduct with the dispersed electrodes, and a pad electrode that is formed on a part of the surface of the transparent conductive film to electrically conduct with the transparent conductive film.

Semiconductor light-emitting device, electrode for the device, method for fabricating the electrode, LED lamp using the device, and light source using the LED lamp

Growing community of inventors

Chichibu, Japan

Kazuhiro Mitani