Kioxia Corporaton

Kazuhiro Matsuo

Keiichi Sawa

Kota Takahashi

Yuta Kamiya

Ha Hoang

Yimin Liu

Kenichiro Toratani

Akifumi Gawase

Atsuko Sakata

A semiconductor device of embodiments includes: a first electrode; a second electrode; an oxide semiconductor layer between the first electrode and the second electrode; a gate electrode surrounding the oxide semiconductor layer; a gate insulating layer between the gate electrode and the oxide semiconductor layer; a first insulating layer provided between the first electrode and the gate electrode; and a second insulating layer provided between the second electrode and the gate electrode. In a cross section parallel to a first direction from the first electrode to the second electrode, a first portion of the oxide semiconductor layer is provided between the gate insulating layer and the first electrode. In the cross section, a second portion of the oxide semiconductor layer is provided between the gate insulating layer and the second electrode.

Semiconductor device and semiconductor memory device each having portions of oxide semiconductor between gate insulating layer and electrodes

Growing community of inventors

Kuwana Mie, Japan

Kazuhiro Matsuo