Fuji Electric Co., Ltd.

Car Mate Mfg. Co., Ltd.

Kazuhiro Kitahara

Tsukasa Tashima

Hiroshi Takishita

Motoyoshi Kubouchi

Shoji Kitamura

Naoko Kodama

Ryouichi Kawano

Tsuneyuki Matsushima

Ryo Nakata

Taketomo Uchiumi

Maiko Asakura

Koumei Yoshida

Provided is a manufacturing method of a semiconductor device comprising a semiconductor substrate which includes a first surface and a second surface which is on an opposite side of the first surface, the method comprising: a front surface processing for providing a first resist to the first surface of the semiconductor substrate and processing the first surface; a first protective film forming for forming a first protective film above the first surface of the semiconductor substrate; a second protective film forming for forming a second protective film above the first protective film, wherein a material of the second protective film is different from that of the first protective film; a back surface processing for processing the second surface of the semiconductor substrate; and a protective film removing for selectively removing the second protective film.

Manufacturing method of semiconductor device

Provided is a semiconductor device including: a semiconductor substrate provided with an active portion and an edge termination structure portion surrounding the active portion; an interlayer dielectric film provided above the semiconductor substrate; a protective film provided above the interlayer dielectric film; and a protruding portion provided farther from the active portion than the edge termination structure portion and protruding further than the interlayer dielectric film. The protruding portion is not covered with the protective film. The protective film is provided closer to the active portion than the protruding portion.

Semiconductor device and method of manufacturing semiconductor device

A method of manufacturing a semiconductor device from a semiconductor wafer in which a plurality of semiconductor chips are formed. The method includes a first process of forming an active region on a first main surface side of the semiconductor wafer and a second process of forming a first process control monitor (PCM) on a second main surface side of the semiconductor wafer. The method further includes before the second process, a third process of forming a second PCM on the first main surface side of the semiconductor wafer. The first PCM and the second PCM are formed at an area located at the same position in a plan view of the semiconductor wafer.

Method of manufacturing semiconductor device

A semiconductor device includes a first semiconductor layer of a first conductivity type provided on a front surface of a silicon carbide semiconductor substrate of the first conductivity type, a first semiconductor region of a second conductivity type, a second semiconductor region of the second conductivity type and connected to the first semiconductor region, a first electrode forming a Schottky-contact with the first semiconductor layer and the first semiconductor region, and a second electrode forming an ohmic contact with the second semiconductor region. The second electrode has a Ti&#x2014;Al alloy layer on a surface in contact with the first electrode. The second electrode further has therein a nickel silicide layer containing titanium.

Semiconductor device having an ohmic electrode including a nickel silicide layer

To restrict alloy formation between a hydrogen-absorbing layer of titanium or the like and an electrode of aluminum or the like, provided is a semiconductor device. The semiconductor device may include a semiconductor substrate. The semiconductor device may include a first layer that is formed above the semiconductor substrate. The first layer may contain a hydrogen-absorbing first metal. The semiconductor device may include a second layer that is formed above the first layer. The second layer may contain a second metal differing from the first metal. The semiconductor device may include an Si-containing layer that is formed between the first layer and the second layer and contains silicon. The second layer may further include silicon. The Si-containing layer may have a higher silicon concentration than the second layer. The second metal may be aluminum. The first metal may be titanium.

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Matsumoto, Japan

Kazuhiro Kitahara