Fuji Photo Film Company, Limited

Kazuhiro Kawaziri

Akio Higashi

Masatoshi Tabei

Yosuke Nakajima

Jin Murayama

Keiji Takeda

Yuzo Mizobuchi

Isamu Hatanaka

Takeshi Tomotsu

Mitsuharu Nirasawa

Masato Fujiwara

A process for producing an amorphous semiconductor membrane. A predetermined gas is introduced into a vacuum chamber which is decomposed by a discharge phenomenon. The discharge phenomenon is caused by an electric field made up of a high frequency electric field or pulsed electric field superposed on a DC electric field.

Apparatus and process for production of amorphous semiconductor

A noncrystalline silicon powder having excellent photoconductivity is described, comprising silicon and hydrogen, exhibiting an infrared absorption spectrum characterized by absorption peaks centered at about 2000 cm.sup.-1 and 630 cm.sup.-1, wherein the height of the absorbance peak at 2000 cm.sup.-1 is at least one-tenth the height of the peak centered at 630 cm.sup.-1, and exhibiting a spin density of not more than 10.sup.18 cm.sup.-3 determined by electron spin resonance spectroscopy; the noncrystalline silicon powder is used as highly efficient photoconductor in photoconductive compositions utilized for the production of electrophotographic photoreceptors.

Method of making .alpha.-silicon powder, and electrophotographic

In the course of producing a thin film of amorphous silicon by high frequency sputtering elemental silicon under an atmosphere containing at least hydrogen gas, the temperature of the base plate onto which the amorphous silicon is deposited is maintained at a temperature of about 50.degree. C. to 150.degree. C. The thus obtained silicon film possesses not only photoconductivity sufficient for use as a photoconductor but also a large difference between photoconductivity and dard conductivity. In addition, a photoconductor of an amorphous silicon thin film can be produced at low cost without environmental pollution problems.

High frequency sputtering produces thin film amorphous silicon

An image is recorded on the recording layer of an image recording material by exposing the photoconductor thereof to imagewise light and applying a voltage there-across. The image recording material is composed of

Image recording material and image recording method using the same

An improved type of thin film photovoltaic cell can be produced by forming a thin layer of n-type CdTe up to 2 micron thick on a conductive support, heat-treating the CdTe layer at 80.degree. to 210.degree. C. for 20 to 180 minutes, and providing on the free surface of the heat-treated CdTe layer a transparent electrode.

Thin film photovoltaic cell and a method of manufacturing the same

A method for forming an image, which comprises subjecting an image-recording material comprising a metal layer and an inorganic material layer to imagewise exposure by application of electromagnetic radiation, and then heating the exposed material to cause a thermal doping of the unexposed area of the metal layer. This method permits the formation of negative-positive type images. The product finds a wide range of valuable industrial applications, for example, as an ordinary image-recording material, laser recording material, electron beam recording material or microrecording material, and also for producing a print-wiring plate, relief metal plate for relief and lithographic printing, or a master for electrostatic printing.

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Asaka, Japan

Kazuhiro Kawaziri