Mitsubishi Electric Corporation

Kazuhiro Kawahara

Hiroyuki Nakamura

Toshitaka Sekine

Koichiro Noguchi

Teruaki Nagahara

Shinji Sakai

Kosuke Yamaguchi

Mamoru Togami

Shohta Oh

Shota O

A semiconductor device includes: a package to seal a semiconductor element; a lead frame having one end portion connected to the semiconductor element and the other end portion protruding from a side surface of the package; a plurality of threaded holes formed in the package to enable the package to be fixed to the substrate; and a resin part capable of closing each of the plurality of threaded holes. A type name of the semiconductor device is represented by open and closed states of the respective threaded holes.

Semiconductor device having at least one resin part that closes one or more corresponding ones of a plurality of threaded holes

A semiconductor device includes: a first terminal inputting a first voltage from outside; a drive unit using the first voltage as a power supply voltage and outputting a drive signal; a switching device driven by the drive signal; a second terminal separated from the first terminal and inputting a second voltage from outside; a comparator using a voltage generated from the second voltage as a power supply voltage and outputting an output signal when a voltage generated from the first voltage is less than or equal to a reference potential; and a shut-off switch shutting off a transmission of the drive signal to the switching device from the drive unit in response to the output signal.

Semiconductor device

An object is to provide a technique capable of improving heat dissipation while maintaining the workability of a product in a semiconductor device. A semiconductor device includes power chips, control chips configured to control the power chips, power side terminals, control side terminals, and a mold resin covering the power chips, the control chips, one ends side of the power side terminals, and one ends side of the control side terminals. An other ends side of the power side terminals and an other ends side of the control side terminals protrude horizontally from a side surface of the mold resin and bend downward at middle parts thereof. Of the power side terminals and the control side terminals, only on the other ends side of the power side terminals, heat dissipation portions protruding in a direction approaching or away from the mold resin from portions bent downward are formed.

Semiconductor device having terminals including heat dissipation portions, and method of manufacturing thereof

A semiconductor device includes: a first semiconductor integrated circuit including at least a first terminal and a second terminal; a first lead frame connected to the first terminal; a second lead frame connected to the second terminal; and a mold resin covering the first semiconductor integrated circuit. The mold resin further covers the first lead frame with a portion of the first lead frame being exposed. The mold resin further covers the second lead frame with a tip of the second lead frame opposite to the second terminal being exposed. The mold resin includes a recess, and the recess is opened to expose only the portion and the mold resin.

A semiconductor module includes: a control circuit for controlling first and second transistors operating complementarily; and an internal controller receiving a data signal including a set value of an operating characteristic from an external controller to store the data signal in a memory and then transferring the set value of the operating characteristic to the control circuit. The data signal is sent to the internal controller in the order of the set value of the operating characteristic and a specific trigger value. The internal controller transfers the set value of the operating characteristic to the control circuit in timed relation to writing of the specific trigger value into the memory. The control circuit includes first and second drivers. The control circuit changes settings of the first and second drivers to thereby change the operating characteristic of the semiconductor module.

Semiconductor module and semiconductor package

An external detection terminal CINis externally connectable outside a package and accepts a voltage signal proportionate to magnitude of a current in a second fixed-potential terminal. A first comparator circuit determines whether magnitude of the current in the second fixed-potential terminal indicated by the voltage signal from the external detection terminal is within a permissible range or beyond the permissible range. A second comparator circuit determines whether magnitude of a current in a sense terminal detected by using an internal detection terminal is within a permissible range or beyond the permissible range. A driving signal generator is prohibited from generating an ON signal as a driving signal if at least one of the first comparator circuit and the second comparator circuit determines that the current magnitude is beyond the permissible range.

Growing community of inventors

Tokyo, Japan

Kazuhiro Kawahara