Kabushiki Kaisha Toshiba

Panasonic Intellectual Property Management Co., Ltd.

Kazuhiro Kato

Takehito Ikimura

Hiroyuki Yamamoto

Yukio Sato

Hiroyuki Tsurumi

Tooru Asakawa

Satoshi Haruki

Akira Kumamoto

Shoichi Imakake

A receiving device includes: a receiver which receives a broadcast signal including an audio signal and obtains a baseband signal of a received signal; a demodulator which obtains the audio signal by demodulating the baseband signal; a middle frequency range detector which detects a signal level of a middle frequency component in a frequency range of the baseband signal; a high frequency range detector which detects a signal level of a high frequency component in the frequency range of the baseband signal; and a processing circuit which sets an effect amount of high-cut processing based on a level difference between the signal level of the middle frequency component and the signal level of the high frequency component. The receiving device further includes a high-cut filtering device which performs the high-cut processing on the audio signal in accordance with a set value of the effect amount.

Receiving device and receiving method

An electrostatic protection circuit includes a trigger circuit that is connected between a first power line and a second power line. The trigger circuit is configured to output a trigger signal in response to a voltage fluctuation between the first and second power lines. A shunt element has a main current path between the first power line and the second power line and is controllable to be on and off using the trigger signal. A control circuit is configured to supply a control signal to turn off the shunt element when a current value of the main current path of the shunt element exceeds a predetermined threshold value.

Electrostatic protection circuit

An electrostatic protection circuit includes a first power line and a second power line. The electrostatic protection circuit includes a trigger circuit connected between the first and second power lines and outputs a trigger signal in response to a fluctuation of a voltage difference between the first and second power lines. The electrostatic protection circuit further includes a shunt element that is controlled by the trigger signal, and includes a main current pathway connected between the first and second power lines. The electrostatic protection circuit further includes a control circuit that is connected between the first and second power lines and supplies a control signal for increasing the conductivity of the shunt element when the voltage difference between the first power line and the second power line exceeds a predetermined voltage.

An electrostatic protection circuit includes a trigger circuit connected between a first and second power source line. The trigger circuit outputs a trigger signal in response to a voltage difference between the power source lines, such as occurs when an electrostatic discharge is received along the power source lines. A buffer circuit in the protection circuit outputs a drive signal in response to the trigger signal. A switch circuit is connected between the first and second power source lines and controls the ON/OFF conduction state between the power source lines in response to the drive signal. A control circuit supplies a control signal to the switch circuit after the drive signal causes the switch circuit to switch to the ON conduction state. The control signal maintains the switch in the ON conduction state while the voltage difference between power source lines exceeds a predetermined value.

A circuit that protects against ESD and avoids an excessive power voltage drop during the protection operation includes a control circuit that is connected between power terminals and outputs a control signal when a voltage between the power terminals exceeds a predetermined value due to a surge current, and an asymmetric current transfer device including a PN junction reverse-biased by the power voltage between the power terminals, that is connected in series with the output current channel of a shunt transistor. The conductivity of the shunt transistor is controlled according to the control signal.

Protection circuit

A semiconductor device for protecting loads from power surges includes a first resistor having a first end connected to a first supply terminal, a capacitor connected to a second end of the first resistor and a second supply terminal. There is a first transistor with a source connected to the first supply terminal and a gate connected to a point between the first resistor and the capacitor. A second resistor is connected between the drain of the first transistor and the second supply terminal, and a first diode is connected between the gate and the source of the first transistor. A second transistor has a drain connected to the first supply terminal, a source connected to the second supply terminal, and a gate connected to the drain of the first transistor. There is a second diode connected between the gate and the source of the second transistor.

Growing community of inventors

Kanagawa, Japan

Kazuhiro Kato