Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Kazuhiro Kagawa

Tsutomu Kiyosawa

Yasuyuki Yanase

Masao Uchida

Takashi Hasegawa

Haruyuki Sorada

Nobuyuki Horikawa

Koutarou Tanaka

A semiconductor device includes a substrate having a main surface inclined in an off-direction from a {0001} surface, and a semiconductor layer. The semiconductor layer includes a level difference for alignment mark. An epitaxial layer is disposed on a first portion of the main surface, the first portion being situated on an off-angle upstream side of the level difference, and on a second portion of the main surface, the second portion being situated on an off-angle downstream side of the level difference. A value of |WL&#x2212;WR| is 1 &#x3bc;m or less, in which WL represents a distance from a center of the level difference to a boundary between an off-angle upstream side corner portion of the level difference and a main surface or a {0001} facet plane generated on the main surface, and WR represents a distance from the center of the level difference to a boundary between an off-angle downstream side corner portion of the level difference and the main surface or the {0001} facet plane generated on the main surface.

Semiconductor device and method for manufacturing the same

A semiconductor device includes a substrate having a main surface inclined in an off-direction from a {0001} surface, a semiconductor layer, and an epitaxial layer. The semiconductor layer includes a trench. Where an upstream side is an off-angle upstream side and a downstream side is an off-angle downstream side in a direction with the off-direction projected on the main surface of the substrate, a side wall of the trench includes first and second side wall portions facing each other and each crossing the off-direction of the substrate. The first side wall portion is situated closer to the off-angle upstream side than the second side wall portion.

Metal-insulator-semiconductor field effect transistor (MISFET) device and method for manufacturing the same

A semiconductor device includes: a substrate with an off-angle; an SiC layer provided on a principal surface of the substrate, including an n type drift region, and having a trench whose bottom is located in the drift region; and a gate electrode provided in the trench in the SiC layer. In the trench in the SiC layer, a first angle formed by at least part of a first sidewall on an off-direction side and the principal surface of the substrate is an obtuse angle, and a second angle formed by at least part of a second sidewall opposite to the first sidewall and the principal surface of the substrate is an acute angle, in a cross section parallel to a direction of a normal line to the principal surface of the substrate and a direction of a c-axis of the substrate.

Semiconductor device and method for manufacturing same

A semiconductor layerhaving a drift region, a body region, and a source regionprovided at a position next to the body region; an epitaxial layerin contact with the body region; and a gate insulating filmprovided on the epitaxial layer are formed on a principal surface of a semiconductor substrate. The epitaxial layer includes an interface epitaxial layerin contact with the body region, a first epitaxial layeron the interface epitaxial layer, and a second epitaxial layeron the first epitaxial layer. An impurity concentration of the interface epitaxial layer is higher than an impurity concentration of the first epitaxial layer, and lower than an impurity concentration of the second epitaxial layer.

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Kanagawa, Japan

Kazuhiro Kagawa