Hitachi, Ltd.

Asahi Glass Company, Limited

Denka Company Limited

Seiko Epson Corporation

Japan Science and Technology Agency

Nec Corporation

Tokyo Institute of Technology

Denki Kagaku Kogyo Kabushiki Kaisha

Opnext Japan, Inc.

Kabushiki Kaisha Toshiba

Mitsubishi Electric Corporation

Agc Inc.

Hitachi Vlsi Engineering Corp.

Kazuhiro Ito

Satoru Watanabe

Yuichi Ono

Naomichi Miyakawa

Makoto Morioka

Toshinari Watanabe

Kazuhiro Kurata

Hideyuki Emoto

Setsuro Ito

Hideo Hosono

Yoshitake Toda

Kenya Kodaira

Mitsuhiro Mori

Tsuyoshi Ito

Norihisa Hagiwara

Masao Kawamura

Yuki Kubota

Taiyo Yamaura

Hiroshi Matsuda

Kazunari Watanabe

Tadashi Nakamura

Yasunobu Matsuoka

Masayoshi Ichikawa

Shigehisa Tanaka

Masaaki Aoki

Kazuyuki Nagatsuma

Sumiko Fujisaki

Katsuro Hayashi

Hirobumi Ouchi

Masahiko Kawata

Ichiro Fujiwara

Shinichi Yanagi

Satoshi Kaneko

Takashi Kawasaki

Jun Someya

Kiichi Ueyanagi

Akira Mitsui

Shinji Tsuji

Shigeo Takata

Nobuhiro Nakamura

Tsukuru Ohtoshi

Atsushi Takai

Sachio Ishioka

Hideo Arimoto

Jiro Chiba

Kazuyuki Fukuda

Hiroyasu Sasaki

Shinya Higashi

Takashi Toyonaka

Masahiro Ibukiyama

Yasuko Osaki

Akira Taike

Makoto Shimaoka

Katsuyoshi Nakayama

Koji Rikukawa

Masahiro Ichiki

Kazuto Ohkoshi

Motoi Tanaka

Koichiro Tonehira

Takeo Takahashi

Youichi Yasuda

Makoto Sakamoto

Tomohiro Ohno

Yuuji Nagano

Atsushi Miura

Shigefumi Kito

Shinzo Nishiyama

Mitshiuro Mori

Ginro Takemura

A phosphor plate includes a plate-like composite including a base material and an α-type sialon phosphor present in the base material, in which, in an X-ray diffraction analysis pattern using a Cu-Kα ray, in a case in which peak intensity corresponding to the α-type sialon phosphor having a diffraction angle 2θ in a range of 30.2° or more and 30.4° or less is defined as Iand peak intensity of a peak having a diffraction angle 2θ in a range of 26.6° or more and 26.8° or less is defined as I, I, and Isatisfy 0<I/I≤10.

Phosphor plate and light emitting device

A phosphor plate includes a plate-like composite including a base material and a phosphor contained in the base material, in which the base material contains spinel, the phosphor includes a phosphor containing a Si element, and in an X-ray diffraction pattern of the phosphor plate using a Cu-Kα ray, in a case in which peak intensity corresponding to the spinel having a diffraction angle 2θ in a range of 36.0° or more and 37.4° or less is set to 1, total intensity of peaks having a diffraction angle 2θ in a range of 32.5° or more and 34.5° or less satisfies 0.5 or less.

A phosphor plate including: a complex containing an α-sialon phosphor and a sintered body containing spinel represented by a general formula MAlO(where M represents at least one of Mg, Mn, and Zn, and 0.2<x<0.6). In addition, there is provided a light emitting device including: a group III nitride semiconductor light emitting element; and the phosphor plate provided on one surface of the group III nitride semiconductor light emitting element. Further, there is provided a method for manufacturing the phosphor plate.

Phosphor plate, light emitting device, and method for manufacturing phosphor plate

Disclosed herein is an amorphous C12A7 electride thin film which has an electron density of greater than or equal to 2.0×10cmand less than or equal to 2.3×10cm, and exhibits a light absorption at a photon energy position of 4.6 eV. Also disclosed herein is an amorphous thin film which is fabricated using a target made of a crystalline C12A7 electride, and containing an electride of an amorphous solid material including calcium, aluminum, and oxygen, in which an Al/Ca molar ratio of the thin film is 0.5 to 4.7.

Metal oxide thin film, organic electroluminescence element including the thin film, solar cell, and thin film fabrication method

A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnOis greater than 15 mol % but less than or equal to 95 mol %.

Thin film of metal oxide, organic electroluminescent device including thin film, photovoltaic cell including thin film, and manufacturing method of thin film

A phosphor plate including a base material, and a plate-shaped composite including phosphors dispersed in the base material, in which a main component of the base material is alumina, the phosphor includes an &#x3b1;-type sialon phosphor, and L* value satisfies 73.5 or more and 85.0 or less, a* value satisfies 4.4 or more and 8.0 or less, and b* value satisfies 10.8 or more and 13.0 or less in L*a*b* color coordinates of the phosphor plate in a case of being measured in accordance with JIS Z 8781-4.

Phosphor plate and light emitting device using the same

A thin film of amorphous metal oxide includes zinc (Zn), silicon (Si) and oxygen (O), the atomic ratio of Zn/(Zn+Si) being 0.30 to 0.95.

Thin film of metal oxide, organic electroluminescent device including the thin film, photovoltaic cell including the thin film and organic photovoltaic cell including the thin film

A ventilation device includes an outside air heat exchanger disposed between a total heat exchanger and an outside air port, a return air heat exchanger disposed between the total heat exchanger and a return air port, and a supply air heat exchanger disposed between the total heat exchanger and a supply air port. A compressor, a flow switching device, the outside air heat exchanger, an outside air expansion device, and the return air heat exchanger are sequentially connected by pipes, the supply air heat exchanger and a supply air expansion device which are connected in series by pipes are connected in parallel to the outside air heat exchanger and the outside air expansion device by pipes, thereby forming a refrigerant circuit in which refrigerant is circulated.

Ventilation device

Provided is a phosphor represented by the general formula: AMF:Mn. The elements A each represents an alkali metal element, the element M represents one or more tetravalent metallic elements selected from Si, Ge, Sn, Ti, Zr and Hf. The phosphor has a minimal light absorption rate in a wavelength range of 300 nm or more and 350 nm or less of 67% or less, and a maximum light absorption rate in a wavelength range of 400 nm or more and 500 nm or less of 65% or more. The phosphor has a Mn content of 0.3% by mass or more and 1.5% by mass or less.

Phosphor, light emitting device, and method for producing phosphor

A swing diagnosis method includes a procedure of calculating levels of a plurality of items including a first item regarding at least one of a backswing and a downswing, and a second item regarding impact on the basis of data regarding a swing, and a procedure of outputting information regarding the levels of the plurality of items.

Swing diagnosis method, recording medium, swing diagnosis apparatus, and swing diagnosis system

A swing diagnosis apparatus includes a level calculation section that calculates a level on the basis of a relationship between a rotation angle about a rotation axis of an exercise appliance at a predetermined timing between the time of starting a backswing and the time of impact with a longitudinal direction of the exercise appliance as the rotation axis, and an inclination of a ball hitting portion of the exercise appliance at impact.

Swing diagnosis apparatus, swing diagnosis system, swing diagnosis method, and recording medium

A swing diagnosis apparatus includes a level calculation section that calculates a level on the basis of a relationship between an incidence angle of a ball hitting portion of an exercise appliance at impact, and an inclination of the ball hitting portion of the exercise appliance at impact.

A swing diagnosis method includes a procedure of performing diagnosis of a plurality of items including a first item regarding at least one of a backswing and a downswing, and a second item regarding impact on the basis of data regarding a swing, and a procedure of outputting diagnosis information on the basis of the plurality of items.

A swing diagnosis apparatus includes a level calculator that calculates a level based on the relationship among at least one imaginary plane, the position of a hitting section of a sport gear at a first timing during a backswing, and the position of the hitting section at a second timing during a downswing.

A C12A7 electride thin film fabrication method includes a step of forming an amorphous C12A7 electride thin film on a substrate by vapor deposition under an atmosphere with an oxygen partial pressure of less than 0.1 Pa using a target made of a crystalline C12A7 electride having an electron density within a range of 2.0&#xd7;10cmto 2.3&#xd7;10cm.

C12A7 electride thin film fabrication method and C12A7 electride thin film

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Tokyo, Japan

Kazuhiro Ito