Sumco Corporation

Sumco Techxiv Corporation

Kazuhiro Iriguchi

Toshiyuki Isami

Kouhei Kawano

Akira Inoue

Takashi Fujikawa

Masayuki Ishibashi

Tadashi Kawashima

Masahiro Yoshikawa

Yoshiya Yoshida

There is provided a susceptor for a vapor phase epitaxial growth device, by which skidding at the time of loading a silicon wafer is prevented and the wafer can be loaded at a fixed position of the susceptor: wherein a ring-shaped groove having sloping planes widening toward a surface of the susceptor are formed on the outermost circumference of the bottom surface; and gas release openings penetrating through to the back surface of the susceptor are formed, each having a sectional area of 2.0 to 3.0 mmand a ratio of all opening areas is 0.25 to 0.5% on the bottom surface.

Susceptor for vapor phase epitaxial growth device

A method for evaluating a shape change of a semiconductor wafer is provided. The method comprises acquiring unconstrained shape data of shape data of the semiconductor wafer being placed on a reference surface in a unconstrained state; acquiring constrained shape data of shape data of the semiconductor wafer being constrained along the reference surface in a constrained state; and comparing the unconstrained shape data and the constrained shape data. A method for manufacturing the semiconductor wafer utilizing a result of the evaluation of the wafer is also provided.

Methods for evaluating and manufacturing semiconductor wafer

It is an object to provide an epitaxial silicon wafer that is provided with an excellent gettering ability in which a polysilicon layer is formed on the rear face side of a silicon crystal substrate into which phosphorus (P) and germanium (Ge) have been doped. A PBS forming step for growing a polysilicon layer is executed on the rear face side of a silicon crystal substrate into which phosphorus and germanium have been doped at a high concentration to execute a baking treatment. After a surface layer of the silicon crystal substrate is then polished up to a predetermined amount, a silicon epitaxial layer is grown by a CVD method. By the above steps, the number of LPDs (caused by an SF) that occur on the surface of the epitaxial silicon wafer due to the SF can be greatly reduced.

Epitaxial silicon wafer and method for manufacturing same

Growing community of inventors

Nagasaki, Japan

Kazuhiro Iriguchi