Murata Manufacturing Co., Ltd.

Kazuhiro Inoue

Masaki Takeuchi

Yutaka Takeshima

Osamu Nakagawara

Masahiko Saeki

Masanobu Watanabe

Koichi Nishita

Toshiaki Takata

Yutaka Ishiura

Hidekazu Kitamura

Takeshi Matsumae

A semiconductor device that includes a semiconductor substrate; a first capacitance section on the semiconductor substrate, the first capacitance section including a first electrode layer, a first dielectric layer, and a second electrode layer; a second capacitance section on the semiconductor substrate, the second capacitance section including a third electrode layer, a second dielectric layer, and a fourth electrode layer; a first external electrode; a second external electrode; a first lead wire led out from the first capacitance section to the first external electrode and having an inductance L; and a second lead wire led out from the second capacitance section to the second external electrode and having an inductance L, wherein an electrostatic capacity Cof the first capacitance section and an electrostatic capacity Cof the second capacitance section are different, and L/L=0.8 to 1.2.

Semiconductor device

A semiconductor device that includes a semiconductor substrate having a first main surface and a second main surface that face each other in a thickness direction, the first main surface containing a trench; an insulation layer on a surface of the trench; a first electrode layer on the insulation layer; a first dielectric layer on the first electrode layer; and a second electrode layer on the first dielectric layer, in which a thickness (L) of the insulation layer, a thickness (L) of the first electrode layer, and a thickness (L) of the second electrode layer satisfy L&#x3e;L&#x3e;L.

Semiconductor device and module

A semiconductor device that includes a semiconductor substrate having a first main surface and a second main surface facing each other in a thickness direction, the first main surface including a trench. The trench has a predetermined depth in the thickness direction and has a substantially wedge shape that has a first side surface and a second side surface that face each other and are not parallel to each other, and a first end surface and a second end surface that face each other and are substantially parallel to each other. The first side surface and the second side surface intersect each other at a line, or extension surfaces of the first side surface and the second side surface extended in the thickness direction intersect each other at a line, and the line extends in a first direction that does not align with a cleavage plane of the semiconductor substrate.

An electronic component has a structure which prevents corrosion caused by moisture intrusion through an electrode pattern extending inwardly from an edge connecting a side and one of main surfaces of a substrate and, therefore, deterioration of a characteristic rarely occurs over time. The electronic component includes, on the first main surface of the substrate, the first electrode pattern extending inwardly from an edge connecting the side of the substrate and the first main surface of the substrate, the second electrode pattern that is opposite to the end of the first electrode pattern through the gap, and the third electrode pattern that is disposed on the first electrode pattern and the second electrode pattern such that it covers the gap. The third electrode pattern is formed from a metal film that is highly resistant to corrosion, the corrosion resistance of which is superior to that of metal films forming the first electrode pattern and the second electrode pattern.

Electronic component and manufacturing method thereof

A surface acoustic wave device has superior electrical power resistance that is obtained by improving stress migration resistance of electrodes. In order to form at least one electrode, for example, on a &#x3b8; rotation Y-cut (&#x3b8;=36&#xb0; to 42&#xb0;) LiTaOpiezoelectric substrate, an underlying electrode layer including Ti or Cr as a primary component is formed, and an Al electrode layer including Al as a primary component is then formed on this underlying electrode layer. The Al electrode layer is an oriented film grown by epitaxial growth and is also a polycrystalline thin film having a twin structure in which a diffraction pattern observed in an X-ray diffraction pole figure has a plurality of symmetry centers.

Method for manufacturing a surface acoustic wave device with a piezoelectric substrate

A surface acoustic wave device includes a surface acoustic wave element and a sealing member for sealing the surface acoustic wave element. The surface acoustic wave element has a piezoelectric substrate and an electrode provided on the piezoelectric substrate. The sealing ember is made of a resin or glass. The electrode has an electrode layer made of Al or an Al alloy and includes crystals having a twin structure.

Surface acoustic wave device

A surface acoustic wave device has superior electrical power resistance that is obtained by improving stress migration resistance of electrodes. In order to form at least one electrode, for example, on a &thgr; rotation Y-cut (&thgr;&equals;36&deg; to 42&deg;) LiTaO piezoelectric substrate, an underlying electrode layer including Ti or Cr as a primary component is formed, and an Al electrode layer including Al as a primary component is then formed on this underlying electrode layer. The Al electrode layer is an oriented film grown by epitaxial growth and is also a polycrystalline thin film having a twin structure in which a diffraction pattern observed in an X-ray diffraction pole figure has a plurality of symmetry centers.

Surface acoustic wave device and manufacturing method therefor

A surface acoustic wave element includes multilayer electrodes having much higher electric power durability compared to conventional surface acoustic wave elements. The multilayer electrodes are prepared by forming, on a piezoelectric substrate, a Ti base electrode film that improves the orientation characteristics of the multilayer electrodes, an Al-type electrode film, an electrode film having a diffusive material that can easily diffuse into the grain boundary of the Al electrode film, and then an Al electrode film, in this order.

Surface acoustic wave element

A surface acoustic wave device includes a piezoelectric substrate made of a LiNO or LiTaO single crystal, and an electrode having power endurance. After a damaged layer formed on a surface of the piezoelectric substrate is removed, an under-electrode layer including at least one of Ti and Cr as a main component is formed by a vacuum deposition process at a temperature of about 100&deg; C. or less, and an Al electrode layer including Al or an Al main component is then formed on the under-electrode layer. The Al electrode layer has a twin crystal structure in which the Al crystal is oriented in a desired direction such that the (111) crystal plane of Al substantially coincides with the Z crystal direction of the piezoelectric substrate.

Surface acoustic wave device with improved electrode

A piezoelectric resonator includes a laminated structure having a piezoelectric laminate, at least one pair of electrodes and a substrate. The piezoelectric laminate includes at least one first piezoelectric layer having a positive temperature coefficient of a resonant frequency and at least one second piezoelectric layer which has a negative temperature coefficient of a resonant frequency. The at least one pair of electrodes interpose at least one of the first and second piezoelectric layers. The substrate supports the laminated structure and holds a portion of the laminated structure such that a suspended portion of the laminated structure vibrates in response to application of a voltage across the pair of electrodes.

Piezoelectric resonator

A method for producing a surface acoustic wave device includes the steps of forming a resist pattern corresponding to an interdigital electrodes transducer onto a piezoelectric substrate; forming a first electrode layer comprising elemental Ti or a Ti-based alloy onto the piezoelectric substrate and the resist pattern R; forming a second electrode layer which comprises elemental Cu or an Al-based alloy containing at least 2% by weight of Cu (this layer may have a multilayered structure) onto the first electrode layer; and removing both the resist pattern R and unnecessary parts, if any, of the first electrode layer 31 and the second electrode layer to simultaneously pattern the first electrode layer and the second electrode layer. A surface acoustic wave device is constructed according to the above method.

Surface acoustic wave device and production method thereof

A SiO layer is formed on a heat sink section having a cavity by thermal oxidation and an aluminum oxide layer is formed on the SiO layer by an electron beam evaporation process at a substrate temperature of 60&deg; C. or less and at a deposition rate of 0.8 nm/s or less. The resulting aluminum oxide film is amorphous and has partial oxygen defects. The SiO layer and the aluminum oxide layer constitute a heat insulating thin-film. A thermoelectric conversion element and an infrared-absorbing layer are formed on the heat insulating thin-film to form an infrared sensor. The infrared sensor can be produced at low production costs and has high sensitivity.

Growing community of inventors

Moriyama, Japan

Kazuhiro Inoue