Panasonic Corporation

Kazuhiro Inoue

Hiroyuki Tsuji

Hachiro Nakatsuji

Yoshimasa Inamoto

An electrode bonding method according to the present invention includes: a plasma cleaning step of irradiating an electrode surface to be cleaned of at least either one of a part, such as a semiconductor device, and a substrate with atmospheric pressure plasma for cleaning; an inert gas atmosphere maintaining step of covering the electrode surface to be cleaned and its vicinity with a first inert gas before the irradiation of the atmospheric pressure plasma is ended, and maintaining that state even thereafter; and a bonding step of bonding an electrode of the part and an electrode on the substrate before the inert gas atmosphere maintaining step is ended. The electrode surface is thereby plasma-cleaned without the possibility of damaging the part to be bonded to the substrate, and the cleaned state is maintained while bonding the electrodes to provide an electrode bonding state of high bonding force and high reliability.

Electrode bonding method and part mounting apparatus

A first inert gas () is supplied into a reaction space () and a high-frequency power supply () applies a high-frequency electric field so that a primary plasma () composed of the first inert gas which has been made into the plasma is ejected from the reaction space. A mixed gas area () in which a mixed gas () having a second inert gas () as a main ingredient and a proper amount of a reactive gas () mixed is formed. The primary plasma collides into the mixed gas area to generate a secondary plasma () composed of the mixed gas which has been made into the plasma, and the secondary plasma is sprayed on a processed object (S) to carry out a plasma processing. Accordingly, the plasma processing is carried out in a wide range by an atmospheric pressure plasma generated by a small input power.

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Osaka, Japan

Kazuhiro Inoue