National Institute for Materials Science

Toyota Jidosha Kabushiki Kaisha

Samsung Electronics Co., Ltd.

Tdk Corporation

Kabushiki Kaisha Toshiba

Western Digital Technologies, Inc.

National Institute of Advanced Industrial Science and Technology

Tohoku University

Denka Company Limited

Kazuhiro Hono

Hiroaki Sukegawa

Seiji Mitani

Tadakatsu Ohkubo

Takao Furubayashi

Yukiko Takahashi

Taisuke Sasaki

Yuya Sakuraba

Shinya Kasai

Jun Liu

Tomoya Nakatani

Koichiro Inomata

Ye Du

Katsuyuki Nakada

Noritsugu Sakuma

Masao Yano

Shinto Ichikawa

Hidefumi Kishimoto

Jie Tang

Toshiji Mukai

Masafumi Shirai

Shuai Tang

Jason Paul Hadorn

Jiamin Chen

Jun Uzuhashi

Kouichiro Inomata

Ikhtiar

Hwachol Lee

Weibin Cui

Masamitsu Hayashi

Masaya Kodzuka

Xiandong Xu

Jungwoo Koo

Zhenchao Wen

Yoshio Miura

Junichi Ito

Tadaomi Daibou

Naoharu Shimomura

Shigeki Takahashi

Shinji Yuasa

Antony Ajan

Yuuzo Kamiguchi

Yushi Kato

Yoshiaki Sonobe

Hua Yuan

Kwangseok Kim

Alexander S Chernyshov

Luchang Qin

Hidetoshi Somekawa

Takayuki Nozaki

Hiromitsu Chatani

Daisuke Ishikawa

Shigeharu Kamado

Ta-Wei Chiu

Wenhong Wang

Yohei Kinoshita

Thomas Scheike

Shingo Muramoto

Rong Shan

Kazutaka Abe

Tomoyuki Honma

Kresna Bondan Fathoni

Ming-Zhe Bian

Taiki Nakata

Mohamed Belmoubarik

Po-Han Cheng

Sinha Jaivardhan

Srinivasan Ananthakrishnan

Pohan Cheng

Varaprasad Bollapragada

Rachwal Anna Koziol

Rajanikanth Ammanabrolu

Jaivardhan Sinha

Shigeyuki Hirayama

Bollapragada Varaprasad

Masahito Tsujikawa

Tomohiko Niizeki

A manufacturing method for an electron source according to the present disclosure includes steps of: (A) cutting out a chip from a block of an electron emission material, (B) fixing a first end portion of the chip to a distal end of a support needle, and (C) sharpening a second end portion of the chip. The step (A) includes forming first and second grooves which constitute first and second surfaces of the chip in the block by irradiating a surface of the block with an ion beam. The first end portion of the chip includes the first surface and the second surface with the surfaces forming an angle α of 10 to 90°. The step (B) includes forming a joint between the distal end of the support needle and the first end portion of the chip.

Electron source, manufacturing method therefor, and device comprising electron source

The present invention provides a simpler method for sharpening a tip of an emitter. In addition, the present invention provides an emitter including a nanoneedle made of a single crystal material, an emitter including a nanowire made of a single crystal material such as hafnium carbide (HfC), both of which stably emit electrons with high efficiency, and an electron gun and an electronic device using any one of these emitters. A method for manufacturing the emitter according to an embodiment of the present invention comprises processing a single crystal material in a vacuum using a focused ion beam to form an end of the single crystal material, through which electrons are to be emitted, into a tapered shape, wherein the processing is performed in an environment in which a periphery of the single crystal material fixed to a support is opened.

Emitter, electron gun in which same is used, electronic device in which same is used, and method for manufacturing same

A magnesium alloy of the present invention has a structure, comprising: 0.5-2.0 wt % of Zn; 0.3-0.8 wt % of Ca; at least 0.2 wt % of Zr; and the remainder comprising Mg and unavoidable impurities, wherein a nanometer-sized precipitate comprising Mg, Ca and Zn dispersed on the (0001) plane of a magnesium matrix, thereby achieving both formability and strength in a range of temperatures including room temperature.

Magnesium alloy and method for manufacturing the same

A magnetoresistive effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein the non-magnetic layer includes a first layer and a second layer, and wherein a lattice constant &#x3b1; of the first layer and a lattice constant &#x3b2; of the second layer satisfy a relationship of &#x3b2;&#x2212;0.04&#xd7;&#x3b1;&#x2264;2&#xd7;&#x3b1;&#x2264;&#x3b2;+0.04&#xd7;&#x3b1;.

Magnetoresistive effect element containing two non-magnetic layers with different crystal structures

The present disclosure provides: a magnetoresistive element having a large magnetoresistance change ratio (MR ratio); and a magnetic sensor, a reproducing head and a magnetic recording and reproducing device. The magnetoresistive element comprises a magnetoresistive film including a pair of body centered cubic (bcc) crystal structure CoFe ferromagnetic layers with a (001) crystal orientation, the pair of layers separated by a non-magnetic layer of Cu with bcc crystal structure.

Magnetoresistive element, magnetic sensor, reproducing head, and magnetic recording and reproducing device

Provided is a precursor of a current-perpendicular-to-plane giant magnetoresistive element having a laminated structure of ferromagnetic metal layer/nonmagnetic metal layer/ferromagnetic metal layer, the precursor having a nonmagnetic intermediate layer containing a non-magnetic metal and an oxide in a predetermined ratio such that the distribution thereof is nearly uniform at the atomic level. Also provided is a current-perpendicular-to-plane giant magnetoresistive element having a current-confinement structure (CCP) which has: a current confinement structure region made of a conductive alloy and obtained by heat-treating a laminated structure of a ferromagnetic metal layer and a nonmagnetic intermediate layer at a predetermined temperature; and a high-resistance metal alloy region containing an oxide and surrounding the current confinement structure region.

Current-perpendicular-to-plane giant magnetoresistive element, precursor thereof, and manufacturing method thereof

According to one embodiment, a magnetic element includes a first layer and a second layer. The first layer includes a first element and a second element. The first element includes at least one selected from the group consisting of Fe, Co, and Ni. The second element includes at least one selected from the group consisting of Ir and Os. The second layer is nonmagnetic.

Magnetic element, magnetic memory device, and magnetic sensor

The object of the present invention is to attain an unconventionally high tunnel magnetoresistance (TMR) ratio by using a barrier layer made of an MgAlOtype insulator material with a spinel structure. The problem can be solved by a magnetic tunnel junction in which a barrier layer is made of a cubic nonmagnetic material having a spinel structure, and both of two ferromagnetic layers that are adjacently on and below the barrier layer are made of a CoFeAl Heusler alloy. Preferably, the nonmagnetic material is made of oxide of an MgAl(0&#x3c;x&#x2264;1) alloy, and exhibits tunnel magnetoresistance of 250% or more and 34000% or less at a room temperature.

Magnetic tunnel junction, magnetoresistive element and spintronics device in which said magnetic tunnel junction is used, and method of manufacturing magnetic tunnel junction

According to an embodiment, a magnetic tunnel junction includes a tunnel barrier layer provided between a first magnetic layer and a second magnetic layer. The tunnel barrier layer is a crystal body made of a stacked structure of a first insulating layer and a second insulating layer. The crystal body is oriented. The first insulating layer is made of an oxide of MgX(0&#x2264;x&#x2264;0.15). X includes at least one element selected from the group consisting of Al and Ti. The second insulating layer is made of an oxide of an alloy including at least two elements selected from the group consisting of Mg, Al, Zn, and Li. Both the first magnetic layer and the second magnetic layer are made of an alloy including B and at least one element selected from the group consisting of Co and Fe.

Magnetic tunnel junction, spintronics device using same, and method for manufacturing magnetic tunnel junction

An object of the present invention is to provide a Magneto-Resistance (MR) element showing a high Magneto-Resistance (MR) ratio and having a suitable Resistance-Area (RA) for device applications. The MR element of the present invention has a laminated structure including a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layeron a substrate, wherein the first ferromagnetic layerincludes a Heusler alloy, the second ferromagnetic layerincludes a Heusler alloy, the non-magnetic layerincludes a I-III-VIchalcopyrite-type compound semiconductor, and the non-magnetic layerhas a thickness of 0.5 to 3 nm, and wherein the MR element shows a Magneto-Resistance (MR) change of 40% or more, and has a resistance-area (RA) of 0.1 [&#x3a9;&#x3bc;m] or more and 3 [&#x3a9;&#x3bc;m] or less.

Magneto-resistance element in which I-III-VI2 compound semiconductor is used, method for manufacturing said magneto-resistance element, and magnetic storage device and spin transistor in which said magneto-resistance element is used

Disclosed is a perpendicularly magnetized film structure using a highly heat resistant underlayer film on which a cubic or tetragonal perpendicularly magnetized film can grow, comprising a substrate of a cubic single crystal substrate having a (001) plane or a substrate having a cubic oriented film that grows to have the (001) plane; an underlayer formed on the substrate from a thin film of a metal having an hcp structure in which the [0001] direction of the thin metal film forms an angle in the range of 42&#xb0; to 54&#xb0; with respect to the &#x3c;001&#x3e; direction or the (001) orientation of the substrate; and a perpendicularly magnetized layer located on the metal underlayer and formed from a cubic material selected from a Co-based Heusler alloy and a cobalt-iron (CoFe) alloy having a bcc structure a constituent material, and grown to have the (001) plane.

Underlayer for perpendicularly magnetized film, perpendicularly magnetized film structure, perpendicular MTJ element, and perpendicular magnetic recording medium using the same

To provide a key monocrystalline magnetoresistance element necessary for accomplishing mass production and cost reduction for applying a monocrystalline giant magnetoresistance element using a Heusler alloy to practical devices. A monocrystalline magnetoresistance element of the present invention includes a silicon substrate, a base layerhaving a B2 structure laminated on the silicon substrate, a first non-magnetic layerlaminated on the base layerhaving a B2 structure, and a giant magnetoresistance effect layerhaving at least one laminate layer including a lower ferromagnetic layer, an upper ferromagnetic layer, and a second non-magnetic layerdisposed between the lower ferromagnetic layerand the upper ferromagnetic layer

Monocrystalline magneto resistance element, method for producing the same and method for using same

Provided is a magnetoresistance effect element in which a tunnel barrier layer stably has a cation disordered spinel structure. This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer disposed between the first ferromagnetic layer and the second ferromagnetic layer. In addition, the tunnel barrier layer is an oxide of MgAl(0&#x2264;x&#x3c;1) and an amount of oxygen in the tunnel barrier layer is lower than an amount of oxygen in a fully oxidized state in which the oxide has an ordered spinel structure.

Magnetoresistance effect element and method for manufacturing the same

Embodiments of the inventive concepts provide a flat perpendicular magnetic layer having a low saturation magnetization and a perpendicular magnetization-type tunnel magnetoresistive element using the same. The perpendicular magnetic layer is a nitrogen-poor (MnGa)Nlayer (0&#x3c;x&#x2264;0.5 and 0&#x3c;y&#x3c;0.1) formed by providing nitrogen (N) into a MnGa alloy while adjusting a nitrogen amount. The perpendicular magnetic layer can be formed flat.

Perpendicular magnetic layer and magnetic device including the same

According to one embodiment, a magnetoresistive element includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The first nonmagnetic layer includes an oxide including an inverse-spinel structure.

Magnetoresistive element and magnetic memory device

Growing community of inventors

Tsukuba, Japan

Kazuhiro Hono