Shin-Etsu Chemical Co., Ltd.

Hitachi-Kokusai Electric Inc.

S-Tec Corporation

Kazuhiro Hirahara

Toshinobu Ishihara

Yoshitaka Hamada

Hironobu Miya

Atsuhiko Suda

Toru Nakanishi

Osamu Watanabe

Takanobu Takeda

Hirohisa Yamazaki

Wataru Kusaki

Tetsuo Shimizu

Yoshinobu Isono

Hiroshi Mihira

Atsushi Takano

Seiki Takaya

Tomoki Horita

Katsuya Takemura

Shigehiro Nagura

Kazunori Maeda

Hiromi Ohsaki

Akihiro Seki

Daisuke Iwai

Takanobu Tsudera

Isao Kaneko

Disclosed is a substrate processing system, including:

Substrate processing system

A silicone resin composition is provided comprising a silicon base polymer obtained from dehydration reaction of a silicon base monomer comprising at least 70 mol % of a hydrolyzable silane compound (A). The hydrolyzable silane compound (A) has at least a pair of silicon atoms linked by a linking group which is an aliphatic hydrocarbon group or an aromatic ring-containing hydrocarbon group, and having attached thereto at least three substituent groups selected from hydrogen, hydroxyl and hydrolyzable groups. A proportion of aromatic structure-containing substituent groups is up to 30 mol % of the entire silicon-bonded substituent groups. The composition is suited to form an optical material.

Silicone resin composition and optical material

Disclosed is a substrate processing system, including: a processing chamber to process a substrate; a vaporizing unit to vaporize a material of liquid; a supply system to supply the processing chamber with gas of the material vaporized by the vaporizing unit; an exhaust system to exhaust an atmosphere in the processing chamber; and a cleaning liquid supply system to supply the vaporizing unit with cleaning liquid for cleaning a product deposited in the vaporizing unit, wherein the cleaning liquid supply system supplies at least two kinds of cleaning liquids into the vaporizing unit so that the product can be removed from the vaporizing unit by action of the two kinds of cleaning liquids on the product.

Provided is a preparation process of trisilylamine capable of preparing high-purity trisilylamine more easily at a lower cost. More specifically, provided is a preparation process of trisilylamine, comprising a step of thermally decomposing perhydropolysilazane under an oxygen-free or low oxygen atmosphere.

Preparation process of trisilylamine

Disclosed is a producing method or a semiconductor device including: loading at least one substrate into a processing chamber; forming a metal oxide film or a silicon oxide film on a surface of the substrate by repeatedly supplying a metal compound or a silicon compound, each of which is a first material, an oxide material which is a second material including an oxygen atom, and a hydride material which is a third material, into the processing chamber predetermined times; and unloading the substrate from the processing chamber.

Semiconductor device producing method and substrate processing apparatus

An organometallic compound vaporizing and feeding system includes a carrier gas feed passageway connecting a carrier gas source to a container containing an organometallic compound MO and having a carrier gas mass flow controller, an MO gas passageway connecting the container to an in-line monitor for transporting the MO gas, a sample gas passageway connecting the in-line monitor to a sample inlet of an ICP spectrometer, a standard gas passageway connecting a gas cylinder filled with a calibration standard gas to the sample gas passageway and having a standard gas mass flow controller, and a diluent gas passageway connected to the standard gas passageway for passing a diluent gas for adjusting the concentration of the standard gas and having a diluent gas mass flow controller.

Organometallic compound vaporizing/feeding system

A chemical amplification positive resist composition comprising a polymeric mixture of a polyhydroxystyrene derivative having a Mw of 1000-500,000 and a copolymer of hydroxystyrene and (meth)acrylate having a Mw of 1000-500,000, as a base resin, has improved dry etching resistance, high sensitivity, high resolution, and process adaptability, and is suppressed in the slimming of pattern films after development with aqueous base.

Chemical amplification resist compositions

A ternary copolymer of hydroxystyrene, tertiary alkyl (meth)acrylate and substitutable phenoxyalkyl (meth)acrylate having a Mw of 1,000-500,000 is blended as a base resin to formulate a chemically amplified, positive resist composition which has advantages including a significantly enhanced contrast of alkali dissolution rate before and after exposure, high sensitivity, high resolution, a satisfactory pattern profile after exposure, high etching resistance, and process adaptability.

Resist composition and patterning process

A crosslinked solid polymer electrolyte is prepared by adding a reactive polyalkylene oxide and an inorganic lithium salt to a block-graft copolymer comprising first and second block chains, and subjecting the reactive polyalkylene oxide to crosslinking reaction. The crosslinked solid polymer electrolyte has a high ionic conductivity and can be readily formed into a tough film and is thus suited for use in large-size secondary batteries.

Preparation of crosslinked solid polymer electrolyte

There is disclosed a cross-linked polymer solid electrolyte and a method of manufacturing the same. A crosslinking agent is added to a block-graft copolymer composed of a polymer block chain A represented by formula I and a polymer block chain B represented by formula II; a high energy ray is irradiated to the block-graft polymer in order to crosslink the entire system; and an nonaqueous electrolytic solution is added to the block-graft polymer. There is also disclosed a composite solid electrolyte for use in a solid electrochemical element. The composite solid electrolyte includes an electrically insulating material, an alkali metal salt, a block-graft copolymer composed of a polymer block chain A represented by formula I and a polymer block chain B represented by formula II, and an aprotic organic solvent. ##STR1##

Cross-linked polymer solid electrolyte, method of manufacturing

There are disclosed a self-crosslinked polymer solid electrolyte, a composite solid electrolyte, and a method of manufacturing the same. A high-energy ray is irradiated to a block-graft copolymer composed of a polymer block chain A represented by formula I and a polymer block chain B represented by formula III in order to crosslink the entire the system. A nonaqueous electrolytic solution is then added to the block-graft polymer to obtain a self-crosslinked polymer solid electrolyte. The self-crosslinked polymer solid electrolyte and an electrically insulating material are combined to obtain a composite solid electrolyte. ##STR1##

Block-graft copolymer, self-crosslinked polymer solid electrolyte and

An organometallic compound represented by the general formula (I) ##STR1## or the general formula (II)

Method of purifying an organometallic compound

A method for vaporizing an organometal compound and supplying the resulting vapor thereof to a crystal growth chamber which comprises the steps of heating an organometal compound to a predetermined temperature to obtain vapor of the compound at a predetermined vapor pressure and supplying, in a constant flow rate, the vapor to the surface of a substrate heated under a reduced pressure: an apparatus for vaporizing an organometal compound and supplying the resulting vapor thereof to a crystal growth chamber 11 comprising a first gas flow path for the vapor of the organometal compound which connects a container 20, in which the organometal compound is charged, to a crystal growth chamber heated under a reduced pressure through a first valve 21, a first massflow controller 22 and a second valve 23 in this order; and a constant temperature oven 24 and 25 for controlling the temperature of the container 20 and the first gas flow path extending from the container 20 to the second valve 23, are herein disclosed. The method and the apparatus makes it possible to form a thin film on substrate having even a large surface area and uniform composition and thickness with good reproducibility and to provide an epitaxial thin film of a compound semiconductor having good sharpness of the crystal growing boundary; the method further makes it possible to prevent the contamination of the solid organometal compound and to provide good workability.

Method for vaporizing and supplying organometal compounds

An apparatus for vaporizing and supplying an organometal compound comprising a gas flow path for starting gas which connects a container filled with the organometal compound to a crystal growth chamber heated under reduced pressure through a main valve, a massflow controller for the starting gas and a valve for supplying the starting gas; and a flow path for a carrier gas which connects a carrier gas source to the discharge outlet of the valve for supplying the starting gas through a massflow controller for carrier gas and a heat exchanger. The container, the flow path for the starting gas and the flow path for the carrier gas are arranged in a constant temperature oven.

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Joetsu, Japan

Kazuhiro Hirahara