Hoya Corporation

Kazuhiro Hamamoto

Tsutomu Shoki

Toshihiko Orihara

Junichi Horikawa

Hirofumi Kozakai

Tatsuo Asakawa

Youichi Usui

Yohei Ikebe

Yoichi Usui

Takumi Kobayashi

Takashi Uchida

Osamu Maruyama

A substrate with a multilayer reflective film, a reflective mask blank, a reflective mask and a method of manufacturing a semiconductor device that can prevent contamination of the surface of the multilayer reflective film even in the case of having formed reference marks on the multilayer reflective film. A substrate with a multilayer reflective film contains a substrate and a multilayer reflective film that reflects EUV light formed on the substrate. Reference marks are formed to a concave shape on the surface of the substrate with the multilayer reflective film. The reference marks have grooves or protrusions roughly in the center. The shape of the grooves or protrusions when viewed from overhead is similar or roughly similar to the shape of the reference marks.

Reflective structure, reflective mask blank, reflective mask and method of manufacturing semiconductor device

A reflective film coated substrate includes a substrate having two main surfaces opposite to each other and end faces connected to outer edges of the two main surfaces; and a reflective film formed on one of the main surfaces and extending onto at least part of the end faces. The reflective film on the main surface has a multilayer structure including low refractive index layers and high refractive index layers alternately formed. The reflective film which extends onto the end faces has a single-layer structure containing a first element higher in content than any other element in the low refractive index layers and a second element higher in content than any other element in the high refractive index layers.

Reflective film coated substrate, mask blank, reflective mask, and semiconductor device manufacturing method

Substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing semiconductor device

A substrate with a multilayer reflective film, a reflective mask blank, a reflective mask and a method of manufacturing a semiconductor device can prevent contamination of the surface of the multilayer reflective film even in the case of having formed reference marks on the multilayer reflective film. A substrate with a multilayer reflective film contains a substrate, a multilayer reflective film that reflects EUV light formed on the substrate, and a protective film formed on the multilayer reflective film. Reference marks are formed to a concave shape on the surface of the protective film. A surface layer of the reference marks contains an element that is the same as at least one of the elements contained in the protective film. A shrink region, where at least a portion of the plurality of films contained in the multilayer reflective film are shrunk, is formed at the bottom of the reference marks.

Substrate with a multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device

Substrate with multilayer reflective film, reflective mask blank, reflective mask, and semiconductor device manufacturing method

A method of manufacturing a reflective mask blank comprising a multilayer reflective film formed on a substrate so as to reflect EUV light; and a laminated film formed on the multilayer reflective film. The method includes the steps of depositing the multilayer reflective film on the substrate to form a multilayer reflective film formed substrate; carrying out defect inspection for the multilayer reflective film formed substrate; depositing the laminated film on the multilayer reflective film of the multilayer reflective film formed substrate; forming a fiducial mark for an upper portion of the laminated film to thereby form a reflective mask blank comprising the fiducial mark, the fiducial mark serving as a reference for a defect position in defect information; and carrying out defect inspection of the reflective mask blank by using the fiducial mark as a reference.

Method for manufacturing reflective mask blank, and method for manufacturing reflective mask

A substrate with an electrically conductive film for fabricating a reflective mask is obtained that is capable of preventing positional shift of the reflective mask during pattern transfer. Provided is a substrate with an electrically conductive film used in lithography, the substrate with an electrically conductive film having an electrically conductive film formed on one of the main surfaces of a mask blank substrate, and a coefficient of static friction of the surface of the electrically conductive film is not less than 0.25.

Substrate with an electrically conductive film, substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing semiconductor device

A reflective mask blank capable of obtaining high contrast at the edges of a phase shift film pattern. Provided is a reflective mask blank comprising a multilayer reflective film and a phase shift film that shifts the phase of EUV light formed in that order on a substrate, wherein root mean square roughness (Rms), obtained by measuring a 1 &#x3bc;m&#xd7;1 &#x3bc;m region on the surface of the phase shift film with an atomic force microscope, is not more than 0.50 nm, and power spectrum density at a spatial frequency of 10 to 100 &#x3bc;mis not more than 17 nm.

Reflective mask blank, reflective mask and method of manufacturing semiconductor device

Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA&#x2212;BA)/(BD&#x2212;BD)&#x2265;350(%/nm), and has a maximum height (Rmax)&#x2264;1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 &#x3bc;m&#xd7;1 &#x3bc;m in the main surface on the side of the substrate where a transfer pattern is formed, wherein BAis defined as a bearing area of 30%, BAis defined as a bearing area of 70%, and BDand BDare defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.

Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask blank, transmissive mask, reflective mask, and semiconductor device fabrication method

Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device

A conductive film coated substrate, including a conductive film formed thereon. In a relationship between a bearing area (%) and a bearing depth (nm) that are obtained by measuring, with an atomic force microscope, a region of 1 &#x3bc;m&#xd7;1 &#x3bc;m of a surface of the conductive film, the surface of the conductive film satisfies a relationship that (BA&#x2212;BA)/(BD&#x2212;BD) is 15 or more and 260 or less (%/nm), and a maximum height (Rmax) is 1.3 nm or more and 15 nm or less.

Conductive film coated substrate, multilayer reflective film coated substrate, reflective mask blank, reflective mask, and semiconductor device manufacturing method

Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA&#x2212;BA)/(BD&#x2212;BD)&#x2265;350 (%/nm), and has a maximum height (Rmax)&#x2264;1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 &#x3bc;m&#xd7;1 &#x3bc;m in the main surface on the side of the substrate where a transfer pattern is formed, wherein BAis defined as a bearing area of 30%, BAis defined as a bearing area of 70%, and BDand BDare defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.

An object of the present invention is to obtain a reflective mask blank capable of obtaining high contrast at the edges of a phase shift film pattern. Provided is a reflective mask blank comprising a multilayer reflective film and a phase shift film that shifts the phase of EUV light formed in that order on a substrate, wherein root mean square roughness (Rms), obtained by measuring a 1 &#x3bc;m&#xd7;1 &#x3bc;m region on the surface of the phase shift film with an atomic force microscope, is not more than 0.50 nm, and power spectrum density at a spatial frequency of 10 to 100 &#x3bc;mis not more than 17 nm.

Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 &#x3bc;m&#xd7;1 &#x3bc;m with an atomic force microscope, and has a power spectrum density of not more than 10 nmat a spatial frequency of not less than 1 &#x3bc;m.

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Tokyo, Japan

Kazuhiro Hamamoto