Screen Holdings Co., Ltd.

Kazuhiro Fujita

Atsuyasu Miura

Hiroki Tsujikawa

Yuya Tsuchihashi

Shuichi Yasuda

Noriyuki Kikumoto

Kenji Kobayashi

Sei Negoro

Michinori Iwao

Koichi Okamoto

Masahide Ikeda

Takashi Izuta

Hajime Nishide

Katsuhiro Fukui

Takatoshi Hayashi

Masahiro Kimura

Masato Tanaka

Takahiro Yamaguchi

Tsuyoshi Okumura

Akihiko Taki

Takashi Akiyama

Naoki Sawazaki

Mizuki Osawa

Hiroshi Ebisui

Makoto Takaoka

Nobuyuki Miyaji

Kenji Takemoto

A chemical liquid preparation method of preparing a TMAH-containing chemical liquid, including, a correspondence relationship preparing step of preparing a correspondence relationship between a supply flow rate ratio between an oxygen-containing gas and an inert-gas-containing gas and a convergent dissolved oxygen concentration in the TMAH-containing chemical liquid that is converged to when the oxygen-containing gas and the inert-gas-containing gas are supplied into the TMAH-containing chemical liquid; a concentration setting step of setting a target dissolved oxygen concentration in the TMAH-containing chemical liquid; a supply-flow-rate-ratio acquiring step of acquiring the supply flow rate ratio between the oxygen-containing gas and the inert-gas-containing gas corresponding to the target dissolved oxygen concentration in accordance with the correspondence relationship prepared in the correspondence relationship preparing step; and a gas supplying step of supplying the oxygen-containing gas and the inert-gas-containing gas with the supply flow rate ratio acquired in the supply-flow-rate-ratio acquiring step.

Chemical liquid preparation device, and substrate processing device

A chemical liquid preparation method of preparing a chemical liquid for treating a film formed on a substrate, including a gas dissolving process in which an oxygen-containing gas and an inert-gas-containing gas are dissolved in the chemical liquid by supplying the oxygen-containing gas which contains oxygen gas and the inert-gas-containing gas which contains an inert gas to a chemical liquid, wherein in the gas dissolving process, a dissolved oxygen concentration in the chemical liquid is adjusted by setting a mixing ratio between the oxygen-containing gas and the inert-gas-containing gas supplied to the chemical liquid as a mixing ratio corresponding to a predetermined target dissolved oxygen concentration.

A substrate processing apparatus includes a suctioning unit for suctioning a processing liquid existing inside a processing liquid pipe that communicates with a discharge port, and a controller. In the suctioning step, the controller executes a suctioning step of suctioning the processing liquid existing inside the processing liquid pipe by the suctioning unit. The controller selectively executes a first suctioning step of retracting a leading end surface of the processing liquid and disposing the leading end surface of the processing liquid after suctioning in a preliminarily set standby position inside the processing liquid pipe, and a second suctioning step of retracting the leading end surface of the processing liquid further back than the standby position. After the second suctioning step, the controller further executes a standby position disposing step of supplying the processing liquid to the processing liquid pipe by the processing liquid supplying unit and disposing the leading end surface of the processing liquid in the standby position.

Substrate processing device and substrate processing method

A substrate processing method includes a liquid discharging step of discharging liquid through a nozzle toward a predetermined supply region on the main surface of a substrate held on a substrate holding unit within a chamber, a humidified gas supplying step of supplying humidified gas with a humidity higher than the humidity within the chamber onto the main surface of the substrate to remove electrical charges carried on the substrate, and a spin-drying step of rotating the substrate about a predetermined rotational axis after the liquid discharging step to spin off the liquid component from the main surface of the substrate. The humidified gas supplying step is started before the start of the liquid discharging step and ended at a predetermined termination timing after the start of the liquid discharging step and before the spin-drying step.

Substrate processing method and substrate processing device

Chemical liquid preparation method, chemical liquid preparation device, and substrate processing device

A substrate processing method includes a chemical liquid supplying step of supplying a chemical liquid to a substrate, an elapsed period measuring step of measuring an after-the-end elapsed period, a recovery step of controlling the switching unit to be in a recovery guiding state, when, at a start of the chemical liquid supplying step, the after-the-end elapsed period is less than a predetermined first period, and a draining step of controlling the switching unit to be in a drain guiding state, in which the liquid led to the recovery space is led to the drain line, when, at the start of the chemical liquid supplying step, the after-the-end elapsed period is not less than the predetermined first period and then switching to the recovery guiding state based on establishment of a predetermined draining ending condition.

Substrate processing method and substrate processing apparatus

A substrate processing apparatus includes a substrate holder that holds a substrate, a processing liquid piping that is communicatively connected with a discharge port for discharging a processing liquid, a processing liquid supplier that supplies the processing liquid to the processing liquid piping, a suction unit for suctioning the processing liquid present inside the processing liquid piping, and a controller which controls the processing liquid supplying unit and the suction unit. The controller executes a processing liquid supplying step that supplies the processing liquid to the processing liquid piping and a suctioning step that suctions the processing liquid inside the processing liquid piping by the suction unit. The controller selectively executes a first suctioning step and a second suctioning step of the processing liquid.

A substrate processing apparatus includes a guard that catches liquid scattered outward from a spin chuck, a cup defining a liquid receiving groove to catch liquid that is guided downward by the guard, a guard elevating/lowering unit that moves the guard in an up/down direction, a cleaning liquid supplying unit that supplies cleaning liquid, discharged from a cleaning liquid nozzle, to the liquid receiving groove via the spin chuck and the guard, a cleaning liquid draining unit that drains the cleaning liquid in the liquid receiving groove, and a controller that controls the cleaning liquid supplying unit and the cleaning liquid draining unit to accumulate cleaning liquid in the liquid receiving groove and controls the guard elevating/lowering unit to cause a lower end portion of the cylindrical portion to be immersed in the cleaning liquid in the liquid receiving groove.

Substrate processing apparatus and processing cup cleaning method

A recover piping cleaning method is a method of cleaning a recovery piping into which a chemical liquid used for processing of a substrate is led via a processing cup, the recovery piping being arranged to lead the led chemical liquid into a predetermined chemical liquid recovery piping, the method including a piping cleaning step of cleaning the interior of the recovery piping by using a cleaning liquid by, while supplying the cleaning liquid to the recovery piping, leading the liquid led into the recovery piping into a drain piping which is different from the chemical liquid recovery piping, and a cleaning chemical liquid supplying step of, supplying the cleaning chemical liquid from a cleaning chemical liquid supply piping connected to the recovery piping to the recovery piping while leading the liquid led into the recovery piping into the drain piping.

Recovery piping cleaning method and substrate processing apparatus

In a substrate processing apparatus, the inner peripheral edge of a second-cup canopy part radially opposes an outer peripheral surface of an opposing-member side wall part. This suppresses dispersion of processing liquids to above a cup part. A second-cup gap distance that is a radial distance between the outer peripheral surface of the opposing-member side wall part and the inner peripheral edge of the second-cup canopy part is greater than a holder gap distance that is a radial distance between the inner peripheral surface of the opposing-member side wall part and the outer peripheral surface of the substrate holder. This prevents or suppresses the possibility that, when a second processing liquid dispersed from a substrate is received by a second cup, the second processing liquid may be pushed downward by a downward airflow. Accordingly, a plurality of types of processing liquids will be separately received by a plurality of cups.

Substrate processing apparatus

The controller of a substrate processing apparatus carries out a liquid column forming step in which cleaning liquid is discharged through a lower surface nozzle when a spin chuck is not holding a substrate, to form a liquid column extending upward from the lower surface nozzle, and, in parallel with the liquid column forming step, a first dropping portion cleaning step in which an upper surface nozzle is reciprocated horizontally between a first position where a dropping portion of the upper surface nozzle does not contact the liquid column and a second position where the dropping portion of the upper surface nozzle does not contact the liquid column, so as to cause the upper surface nozzle to pass through a first middle position where the upper discharge port of the upper surface nozzle overlaps with the liquid column in a plan view.

Substrate processing apparatus and nozzle cleaning method

A substrate treatment apparatus includes a substrate retainer that horizontally retains the substrate. A blocking portion has a lower surface facing an upper surface of said substrate and a tapered surface extending diagonally upward from an inner periphery of the lower surface toward a center of the lower surface. A rotary portion rotates the substrate and the blocking portion about a vertical rotary axis. A first supply unit supplies treatment liquid and a second supply unit supplies rinse liquid toward a tapered surface from the center of the rotated blocking portion through said opening of said blocking portion. The first supply unit supplies the treatment liquid during a first period and the second supply unit supplies the rinse liquid during a second overlapping period.

Substrate treatment method of treating substrate, and substrate treatment apparatus

A substrate processing method is a substrate processing method which applies sequentially common etching processing which is common to each of a plurality of substrates. The common etching processing has an etching step and a high-temperature liquid discharge step. The substrate processing method further includes a piping heating step in which, of the plurality of common etching processings applied to the plurality of substrates, before the initial common etching processing, the pipe wall of the common piping is raised in temperature up to a predetermined second liquid temperature higher than a first liquid temperature and in each of the common etching processings, after each of high-temperature liquid discharge steps and before each of next etching steps, there is not performed a step in which the pipe wall of the common piping is lowered in temperature.

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Kyoto, Japan

Kazuhiro Fujita