Kabushiki Kaisha Toshiba

Other

Tomoegawa Co., Ltd.

Kazuhiro Eguchi

Seiji Inumiya

Katsuyuki Sekine

Akio Kaneko

Motoyuki Sato

Katsuhiko Hieda

Masahiro Kiyotoshi

Yoshitaka Tsunashima

Takashi Kawakubo

Kazuhide Abe

Shuichi Komatsu

Katsuya Okumura

Yasuo Ohba

Keitaro Imai

Tomonori Aoyama

Mitsuhiro Kushibe

Soichi Yamazaki

Hiroshi Tomita

Hideto Furuyama

Kyoichi Suguro

Yuzo Hirayama

Daisuke Matsushita

Koichi Muraoka

Katsuaki Natori

Yasushi Nakasaki

Koichi Kato

Kenya Sano

Takao Noda

Noburu Fukushima

Mariko Takayanagi

Fumihiko Inoue

Yoshihiro Kokubun

Masaaki Nakabayashi

Tetsuo Sadamasa

Yasuo Ashizawa

Daisuke Muramatsu

Masahisa Funemizu

Takatosi Nakanisi

Masahisa Funamizu

Rie Satoh

Shoko Niwa

An object of the present invention to provide a resistor element which can be mounted at a higher density and can cope with a wide range of resistance values, the present invention provides a resistor element including a resistor which mainly contains metal fibers, electrodes which are formed at an end portion of the resistor, and an insulating layer which is in contact with the resistor and the electrodes.

Resistor element

A semiconductor device according to the present invention comprises a semiconductor substrate, a gate insulating film which is composed of a material whose main component is a tetravalent metal oxide, a mixture of a tetravalent metal oxide and SiO, or a mixture of a tetravalent metal oxide and SiON and which containing B when it is in an nMOS structure on the semiconductor substrate or containing at least one of P and As when it is in a pMOS structure on the semiconductor substrate, and a gate electrode made of a metal having a work function of 4 eV to 5.5 eV.

Semiconductor device and method of manufacturing the same

A semiconductor device comprising a semiconductor substrate, a gate dielectrics formed on the semiconductor substrate and including a silicon oxide film containing a metallic element, the silicon oxide film containing the metallic element including a first region near a lower surface thereof, a second region near an upper surface thereof, and a third region between the first and second regions, the metallic element contained in the silicon oxide film having a density distribution in a thickness direction of the silicon oxide film, a peak of the density distribution existing in the third region, and an electrode formed on the gate dielectrics.

Semiconductor device and method for manufacturing semiconductor device

A semiconductor apparatus wherein a device formed on a semiconductor substrate comprises a gate insulating film including a high dielectric constant film formed on the substrate and an anti-reaction film formed on the high dielectric constant film, and a gate electrode formed on the anti-reaction film, the high dielectric constant film comprises a film containing at least one of Hf and Zr, and Si and O, or a film containing at least one of Hf and Zr, and Si, O and N, the anti-reaction film comprises an SiOfilm, a film containing SiOas a main component and at least one of Hf and Zr, a film containing SiOas a main component and N, a film containing SiOas a main component, Hf and N, a film containing SiOas a main component, Zr and N, or a film containing SiOas a main component, Hf, Zr and N.

Semiconductor apparatus and method of manufacturing the semiconductor apparatus

A semiconductor device manufacturing method comprises: forming a gate insulative film on a semiconductor substrate by: forming a first nitride film on the substrate; forming a first oxide film and a second oxide film, the first oxide film being between the substrate and the first nitride film, the second oxide film being on the first nitride film; and nitriding the second oxide film to form, on the first nitride film, one of either: a second nitride film or an SiON film; and forming a gate electrode on the gate insulative film; wherein the equivalent oxide thickness of the gate insulative film is equal to or less than 1 nm.

Semiconductor device manufacturing method

Semiconductor apparatus having a semicondutor element with a high dielectric constant film

A manufacturing method of a semiconductor device disclosed herein, comprises: forming a silicate film containing metal on a substrate; and introducing nitrogen and deuterium into the silicate film by using NDgas.

Semiconductor device and manufacturing method of the same

According to the present invention, there is provided a semiconductor device fabrication method comprising:

Semiconductor device fabrication method and fabrication apparatus

A semiconductor device including a gate insulating film selectively formed on a predetermined region of a semiconductor substrate; a gate electrode formed on said gate insulating film; and a source region and drain region formed, in a surface portion of said semiconductor substrate, on two sides of a channel region positioned below said gate electrode; wherein a carbon concentration in an interface where said gate insulating film is in contact with said gate electrode is not more than 5&#xd7;10atoms/cm.

Semiconductor device and method of fabricating the same

According to the present invention, there is provided a semiconductor device comprising: an interface insulating film selectively formed on a predetermined region of a semiconductor substrate, and having a film thickness of substantially one atomic layer; a gate insulating film formed on said interface insulating film, and having a dielectric constant higher than that of said interface insulating film; a gate electrode formed on said gate insulating film; and source and drain regions formed in a surface region of said semiconductor substrate on two sides of a channel region positioned below said gate electrode.

Method of fabricating semiconductor device having gate insulating film comprising a silicate nitride film with interface insulating film

Growing community of inventors

Chigasaki, Japan

Kazuhiro Eguchi