Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Kazuhiro Adachi

Koichi Hashimoto

Masao Uchida

Osamu Kusumoto

Shun Kazama

Takashi Hori

Masashi Hayashi

Koutarou Tanaka

A substrate voltage control circuit comprising: a first connection terminal; a second connection terminal; a substrate voltage control terminal; a first switch having a first source, a first drain, and a first gate, the first source being connected to the substrate voltage control terminal, the first drain being connected to the first connection terminal; a first resistor connected between the first gate and the second connection terminal; a second switch having a second source, a second drain, and a second gate, the second source being connected to the substrate voltage control terminal, the second drain being connected to the second connection terminal; and a second resistor connected between the second gate and the first connection terminal.

Substrate voltage control circuit

A foreign object detection device in the present disclosure includes: a set sensor coil; and a determination device that detects a foreign object, based on voltage of the set sensor coil. A first sensor coil group in the set sensor coil includes unit sensor coils wound in a first winding direction and unit sensor coils wound in a second winding direction opposite to the first winding direction, these coils wound in the respective directions being electrically connected in series. Each unit sensor coil includes a coil conductor prescribing its external shape. Coil conductors are continuously and electrically connected in series. A part or the whole of the coil conductor forming the unit sensor coil in the first winding direction is a part or the whole of the coil conductor forming the unit sensor coil in the second winding direction.

Foreign object detection device

A foreign matter detection device is mounted on a non-contact power supply system that supplies power in a non-contact manner from a power supply unit to a power reception unit. The foreign matter detection device includes a magnetic field sensor and a magnetic field generation unit. The magnetic field sensor detects an amount of magnetic flux that changes due to foreign matter existing between the power supply unit and the power reception unit. The magnetic field generation unit is provided separately from the power supply unit and the power reception unit, includes a magnetic field generation coil unit, and generates a magnetic field for driving the magnetic field sensor.

Foreign matter detection device

A semiconductor element including an MISFET exhibits diode characteristics in a reverse direction through an epitaxial channel layer. The semiconductor element includes: a silicon carbide semiconductor substrate of a first conductivity type, semiconductor layer of the first conductivity type, body region of a second conductivity type, source region of the first conductivity type, epitaxial channel layer in contact with the body region, source electrode, gate insulating film, gate electrode and drain electrode. If the voltage applied to the gate electrode is smaller than a threshold voltage, the semiconductor element functions as a diode wherein current flows from the source electrode to the drain electrode through the epitaxial channel layer. The absolute value of the turn-on voltage of this diode is smaller than the turn-on voltage of a body diode that is formed of the body region and the first silicon carbide semiconductor layer.

Semiconductor element, semiconductor device, and power converter

The present invention is directed to an MIS type semiconductor device, including a channel layer between a semiconductor body region and a gate insulating film, the channel layer having an opposite semiconductor polarity to that of the semiconductor body region. Since Vfb of the semiconductor device is equivalent to or less than a gate rated voltage Vgccof the semiconductor device with respect to an OFF-polarity, density of carrier charge that is induced near the surface of the semiconductor body region is kept at a predetermined amount or less with a guaranteed range of operation of the semiconductor device.

Semiconductor device and method for driving same

A semiconductor device of the present invention has a semiconductor element regionthat is provided in part of a silicon carbide layerand a guard-ring regionthat is provided in another part of the silicon carbide layersurrounding the semiconductor element regionwhen seen in a direction perpendicular to a principal surface of the silicon carbide layer. The semiconductor device includes: an interlayer insulation filmwhich is provided on the principal surface of the silicon carbide layerin the semiconductor element regionand the guard-ring region, the interlayer insulation filmhaving a relative dielectric constant ofor more; a first protective insulation filmprovided on the interlayer insulation film in the guard-ring region; and a second protective insulation filmprovided on the first protective insulation film, wherein the first protective insulation filmhas a linear expansion coefficient which is between a linear expansion coefficient of a material of the second protective insulation filmand a linear expansion coefficient of a material of the interlayer insulation film

Semiconductor device and method for producing same

A semiconductor elementincluding an MISFET according to the present invention is characterized by having diode characteristics in a reverse direction through an epitaxial channel layer. The semiconductor elementincludes a silicon carbide semiconductor substrateof a first conductivity type, a semiconductor layerof the first conductivity type, a body regionof a second conductivity type, a source regionof the first conductivity type, an epitaxial channel layerin contact with the body region, a source electrode, a gate insulating film, a gate electrodeand a drain electrode. If the voltage applied to the gate electrode of the MISFET is smaller than a threshold voltage, the semiconductor elementfunctions as a diode in which current flows from the source electrodeto the drain electrodethrough the epitaxial channel layer. The absolute value of the turn-on voltage of this diode is smaller than that of the turn-on voltage of a body diode that is formed of the body region and the first silicon carbide semiconductor layer.

A semiconductor elementincluding an MISFET according to the present invention is characterized by having diode characteristics in a reverse direction through an epitaxial channel layer. The semiconductor elementincludes a semiconductor layerof a first conductivity type, a body regionof a second conductivity type, source and drain regionsandof the first conductivity type, an epitaxial channel layerin contact with the body region, source and drain electrodesand, a gate insulating film, and a gate electrode. If the voltage applied to the gate electrode of the MISFET is smaller than a threshold voltage, the semiconductor elementfunctions as a diode in which current flows from the source electrodeto the drain electrodethrough the epitaxial channel layer. The absolute value of the turn-on voltage of this diode is smaller than that of the turn-on voltage of a body diode that is formed of the body region and the first silicon carbide semiconductor layer.

Growing community of inventors

Osaka, Japan

Kazuhiro Adachi