Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Kazuhiko Tsutsumi

Tatsuya Fukami

Motohisa Taguchi

Yoshiyuki Nakaki

Takashi Tokunaga

Yuji Kawano

Kunimaro Tanaka

Osamu Ito

Yoshio Fujii

Isao Watanabe

Koichi Takeuchi

Kyosuke Yoshimoto

Hiroshi Ohji

Kazuo Hashima

Izuru Shinjo

Yukari Toide

Hiroshi Sugahara

Naoki Hiraoka

Yasuyoshi Hatazawa

Naoki Yutani

Yukihisa Yoshida

Yuichi Sakai

Yuuichi Sakai

Kazuhiko Nakane

Hiroaki Sugiura

Jun Someya

Masahiro Kawai

Teruo Furukawa

Tomoya Yamakawa

Akira Yamashita

Suguru Nagae

Hiroshi Kobayashi

Yoshihiro Kiyose

Shinji Tanabe

Hiroshi Shibata

Masayoshi Shimamoto

Masaru Tsuchihashi

Kenji Nomura

Munehito Kumagai

Kazuo Kuramoto

Kyosuke Yosimoto

Patrick James French

Yutaka Ohashi

Kuniko Kojima

Tomohiro Sasagawa

Masafumi Kimata

Eiji Niikura

Kazuo Kyuma

Hironobu Yasui

Akihiro Nagase

Tomohiro Ishikawa

Sei Tsunoda

Shinichi Izuo

Rena Nishitani

Tsukasa Matsuura

Hisatoshi Hata

Jiwei Jiao

Ikuya Kawakita

Yuzo Ohdoi

Yoshiyuki Nakai

Martial Chabloz

Ryuichirou Aria

Takaski Tokunaga

Sei Tsuroda

Yuzou Ohdoi

Ryuichirou Arai

A planar light source device includes a first light source for emitting a first light ray having a punctate spatial luminance distribution; a second light source for emitting a second light ray; a first spatial luminance distribution conversion portion for changing the first light ray to a linear spatial luminance distribution; a second spatial luminance distribution conversion portion for changing a spatial luminance distribution of the first and second light rays to a planar spatial luminance distribution; wherein the first light ray is a laser light; the second light ray has a divergence angle larger than the divergence angle of the first light ray when the first light ray is emitted from the first light source; and a slow-axis direction of the first light ray entering the second spatial luminance distribution conversion portion is parallel to an outgoing direction of the planar light.

Backlight device and liquid crystal display apparatus

A video display apparatus generates luminance information for individual frames of a video signal from histograms of the luminance component of the video signal, and classifies the content of the video signal on the basis of this information. Color saturation information is also generated from color saturation histograms, and scene changes are detected. Video correction parameters and display control parameters are derived from the content classification and color saturation information. The video signal is corrected according to the video correction parameters, and displayed according to the display control parameters. Display characteristics suitable for the video content are thereby obtained. The parameters are changed when a scene change is detected, so that the viewer is not disturbed by the change in video display characteristics.

Video display apparatus that adjusts video display parameters based on video picture type

An electrochemical etching system has an etching bath for holding an n-type silicon substrate with a first surface of the substrate in contact with hydrofluoric acid, an electrode positioned in the hydrofluoric acid, a power source having a positive pole connected to the silicon substrate and a negative pole connected to the electrode, and an illumination unit having a light source for illumination of a second surface of the silicon substrate. The illumination unit illuminates the second surface of the silicon substrate with an illumination intensity of 10 m W/cm or more. A ratio of a maximum illumination to a minimum illumination of the second surface of the silicon substrate is 1.69:1 or less. With the etching system, pores and/or trenches of a certain size and shape can be formed in an entire area of the silicon substrate having a diameter of more than three inches.

Method and apparatus for radiation assisted electrochemical etching and etched product

A silicon device includes an insulating substrate having a recess on the surface of the substrate, and a beam-like structure made of silicon on the front surface of the insulating substrate, surrounds the recess. The beam-like structure includes at least one functional section having a supporting section bonded to the insulating substrate and at least one cantilever integral with the supporting section and extending across the recess. The silicon device also includes a frame made of silicon surrounding and spaced from the beam-like structure and on the insulating substrate. The silicon device also includes a conductive film having electrical continuity with the frame and on the surface of the insulating substrate, at least in a portion directly opposite the cantilever. The conductive film prevents the insulating substrate from being charged, thereby significantly suppressing damage of the beam-like structure during dry etching.

Silicon device

An inertia force sensor with a damper. The damper includes a cantilever for a movable part disposed in a movable electrode protruding therefrom, and a cantilever for a fixed part disposed in a support portion for the movable part or a support portion for the fixed part and protruding therefrom. The damper allows the cantilever for the movable part and the cantilever for the fixed part to contact each other before the movable electrode contacts the support portion for the movable part and the support portion for the fixed part. As a result, it is possible to prevent a stopper from being damaged and to improve the reliability of the sensor.

Inertia force sensor

A thermo-sensitive flow rate sensor that comprises a plate-like substrate, a part of which is removed so that a space is provided therein, a diaphragm portion formed like a thin layer above the space in such a manner as to be integral with the plate-like substrate, and a heating element constituted by a thermo-sensitive electrically resistant film formed on the diaphragm. Plural holes penetrating the diaphragm portion are bored in an outer peripheral portion of the heating element. Each of the plurality of holes is shaped in such a way as to have obtuse corner portions or to have substantially no corner portions. The thermo-sensitive flow rate sensor measures the flow rate of a fluid, which is to be measured, according to an amount of heat transferred to the fluid from a part heated by energizing the heating element.

Thermo-sensitive flow rate sensor

A magnetic field sensing element comprises an underlayer formed on a substrate, a giant magnetoresistance element formed on the underlayer for detecting a change in a magnetic field, and an integrated circuit formed on the substrate for carrying out predetermined arithmetic processing based on a change in a magnetic field detected by the giant magnetoresistance element, wherein the giant magnetoresistance element and the integrated circuit are formed on the same surface.

Magnetic field sensing element and device having magnetoresistance element and integrated circuit formed on the same substrate

A pressure sensor includes a first diaphragm having a first surface receiving pressure, a first thermal detection section located opposite a central section of the first diaphragm, and a second thermal detection section having little displacement by pressure, and located opposite the first diaphragm The pressure sensor amplifies and outputs a difference between the first thermal detection section for pressure measurement and the second thermal detection section for reference output. Since the diaphragm to which the second thermal detection section is opposed is equal in thickness to the diaphragm to which the first thermal detection section is opposed, pressure can be accurately measured relative to a sudden change in atmospheric temperature.

Pressure sensor

A flow rate detecting element measuring the flow rates of various fluids, particularly the intake air of an internal combustion engine. The flow rate detecting element has a thin film layer including a support film and a protective film on one surface of a flat substrate, a heating resistance section and a comparative resistance section thermosensitive resistor having patterns and located between the support film and the protective film. The flat substrate has a recess which penetrates the flat substrate in the thickness direction thereof and facing the heating resistance section and the comparative resistance section. A fluid flow passage communicates with the recess which faces the comparative resistance section for fluid flow into the recess. Flow rate or velocity of a fluid can be measured accurately using the heating resistance section according to the fluid temperature reported by the comparative resistance section.

Heat-sensitive type flow rate detecting element and holder therefor

A pressure sensor includes a diaphragm having a first surface receiving pressure, and a first thermal detection section opposed to a central section of the diaphragm through a spacer and having a thermo-sensitive resistance section, and a second thermal detection section opposed to an end section of the diaphragm and having a thermo-sensitive resistance section, wherein the first thermo-sensitive resistance section and second thermo-sensitive resistance section are connected to independent, adjustable constant-current sources, respectively, and are connected to a differential amplifier which amplifies a difference between (i) a voltage of the first thermal detection section, which detects a displacement quantity of the diaphragm due to pressure change as a displacement quantity of a thermal equilibrium state by the thermal detection section, and (ii) a voltage of the second thermal detection section, which does not change according to pressure. The sensor can measure pressure with high accuracy.

A micro device including an insulating substrate having a recess formed on a surface, and a beam-like silicon structure on the front surface of the insulating substrate surrounding the recess. The beam-like structure includes at least one functional section, and the functional section has a supporting section bonded to the insulating substrate and at least one cantilever integral with the supporting section and extending across the recess. The micro device also has an electrically conductive film electrically connected to the supporting section, on the surface of the recess at least directly under a cantilever. The electrically conductive film prevents the surface of the recess from being positively charged in the dry etching process. Thus, an etching gas having a positive charge is not subjected to electrical repulsion from the recess and does not impinge on the back surface of the silicon substrate, and therefore erosion of the cantilever does not occur. As a result, since the beam-like structure is formed with high accuracy in shape and dimensions, the micro device has improved reliability and an improved degree of freedom in design.

Microdevice and its production method

A pressure sensor of the present invention comprises a diaphragm having a first surface which receives pressure and a thermal detecting portion with a heat sensitive portion disposed as to oppose the diaphragm through a spacer, wherein displacement values of the diaphragm owing to variations in pressure are detected at the thermal detecting portion as variation values of thermal equilibrium state. With this arrangement, a surface of the diaphragm which directly receives pressure from measuring fluid does not need to undergo film forming or photolithographic processes whereby main portions of thermal pressure detecting elements might be formed onto a silicon substrate by large quantities in a lump sum through simple manufacturing processes so that it is possible to improve accuracy and reliability of the thermal pressure detecting elements and to obtain a pressure sensor of low cost.

Pressure sensor with a thermal pressure detecting element

A method of manufacturing a silicon device with a single crystal structure, including forming etching start patterns on a surface of a silicon substrate; etching the silicon substrate by applying a voltage to the silicon substrate while the silicon substrate is immersed in a solution containing fluorine ions, with the silicon substrate used a positive electrode, to form narrow etched portions that extend into the substrate from the etching start patterns; and accelerating etching of the silicon substrate by increasing current flowing through the silicon substrate after the narrow etched portions have reached a predetermined depth, so that neighboring etched portions are in communication with each other below the narrow etched portions and a free standing structure including part of the silicon substrate is formed, and a hollow portion is formed below the free standing structure.

Manufacturing method of silicon device

The present invention improves the sensitivity and expands the temperature range of operation of a magnetic detection device used in conjunction with rotary shafts such as those found in automobiles. A magnetic detection element consists of a giant magnetoresistance element and an integrated circuit for performing a predetermined operational processing based on the variation of magnetic field detected by the giant magnetoresistance element, and the magnetic detection element is operated in the magnetic field in the range of exceeding the magnetic field for maximizing the resistance value of the giant magnetoresistance element and below the field obtained by multiplying the saturation magnetic field of the giant magnetoresistance element by 0.8.

Rotation sensor

Growing community of inventors

Amagasaki, Japan

Kazuhiko Tsutsumi