Fujitsu Corporation

Kazuhiko Sumi

Masao Taguchi

Kenji Nakagawa

Yuichiro Yanagishita

Toshiaki Kawabata

Seiichiro Yamaguchi

Masahiro Uraguchi

Yusei Miyazono

Kazumasa Doi

A mask includes a transparent layer which is transparent with respect to a light which is used for an exposure, and a mask pattern layer which is formed on the transparent layer. At least a portion of the mask pattern layer is made up solely of a phase shift layer for transmitting the light, so that a phase shift occurs between a phase of the light transmitted through the phase shift layer and a phase of the light transmitted through a portion of the mask having no phase shift layer.

Mask producing method

A resist developing apparatus has a plurality of developing solution containers each provided with a temperature regulator, a mixture tank connected to the plurality of developing solution containers, a flow control valve connected between the mixture tank and each developing solution container, a temperature detector for detecting the temperature of developing solution in the mixture tank, and a control system for controlling the flow control valve in accordance with the temperature detected by the temperature detector. As the development progresses, the temperature of the developing solution is lowered to stop the development. Thereafter, the developing solution is supplanted by rinsing solution.

Method and apparatus for developing resist

A mask includes a transparent layer which is transparent with respect to a light which is used for an exposure, and a mask pattern layer which is formed on the transparent layer. At least a portion of the mask patterns layer is made up solely of a phase shift layer for transmitting the light, so that a phase shift occurs between a phase of the light transmitted through the phase shift layer and a phase of the light transmitted through a portion of the mask having no phase shift layer.

Pattern forming method using mask

A method for manufacturing a phase shift mask of the invention comprises a process of protecting a side wall of an opening in a light-damping film by means of a resist and then etching the light-damping film to be so thin as a halftone film.

Phase shift mask and its manufacturing method

A mask includes a first layer which is transparent with respect to an exposure light, and a phase shift mask pattern which is formed on the transparent layer. The pattern includes one or more phase shift regions adapted for transmitting the exposure light impinging thereon and shifting the phase of the transmitted light relative to the phase of light which passes through a portion of the mask having no phase shift layer.

Growing community of inventors

Kawasaki, Japan

Kazuhiko Sumi