Oki Electric Industry Co., Ltd.

Kazuhiko Sera

Yasushi Shiraishi

Etsuo Yamada

Kenji Nagasaki

Akira Sakamoto

Kazunari Oyama

A semiconductor device which is sealed with a plastic sealing layer and whose thickness is regulated to be below a given value is known. Since the thickness of the device is small, and the thickness of the upper portion of the plastic sealing layer and the thickness of the lower portion thereof are different from each other, the plastic sealing layer becomes warped, thus causing a crack on the side of the semiconductor chip. To solve this problem, the semiconductor device according to the present invention comprises a semiconductor chip on which a plurality of grooves are defined. Consequently, the thickness of the lower portion of the plastic layer becomes greater, thereby preventing cracks from occurring on the semiconductor chip.

Method of making a lead-on-chip device

A semiconductor. device comprises a semiconductor chip on which a plurality of grooves are defined, thus acting as a resisting member, the effect of which is to prevent the semiconductor chip from bending. Consequently, the thickness of the lower portion of the plastic layer becomes greater, thereby preventing cracks from occurring on the semiconductor chip.

Semiconductor device

In a semiconductor device,according to the present invention, a plurality of inner leads are bonded to a front surface of a semiconductor element,covered by a package,, with bent portions,formed at some inner leads,among the plurality of inner leads,and the front ends of the bent portions,exposed at a front surface of the package,. This structure ensures that the semiconductor element is not caused to move vertically inside the forming die by the pressure of the liquid resin or the like during the sealing process.

Leads 106 provided at an electronic part connectors 110 of an electronic part 100, which are electrically connected to a surface of a substrate 120 are structured in such a manner that they are directly connected to a substrate connector formed at the surface of the substrate 120 through a pressing force or a bonding force applied to the electronic part 100. This lead structure makes it possible to preclude the use of connectors including additional members such as contact pins, to achieve a reduction in the length of the communicating path of the electrical signals, and in addition, since electrical connection is achieved at one location, i.e., between the leads 106 and the substrate connector at the substrate 120, the contact resistance is minimized.

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Tokyo, Japan

Kazuhiko Sera