Kabushiki Kaisha Toshiba

Kazuhiko Satou

Yuuichi Tatsumi

Hidenobu Minagawa

Hitoshi Ohta

Noriaki Suzuki

That surface portion of a semiconductor substrate which is adjacent to a buried source region formed in the substrate is covered with an offset side wall to suppress expansion of a channel beneath the offset side wall. In addition, buried source regions in the form of offset side walls are formed on the two sides of a drain region having one non-offset side wall to prevent a write or read error in unselected memory cell transistors on both sides of a selected memory transistor either in a data write or in a data read.

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Yokohama, Japan

Kazuhiko Satou