Mitsubishi Denki Kabushiki Kaisha

Other

Nisshin Denki Kaushiki Kaisha

Kazuhiko Noguchi

Takeshi Kubota

Shigeo Sasaki

Naomitsu Fujishita

Takahisa Nagayama

Kazuhiro Shono

Tetsuya Nakanishi

Tadaki Nakahori

Kouji Yabushita

Tetsuya Sakoguchi

Takeshi Morita

Shigeaki Noumi

Soichiro Okuda

Masami Hayashi

Hidenobu Murakami

Masayasu Tanjo

Susumu Katoh

Masao Naitou

Liquid crystal display and manufacturing process of thin film transistor used therein

Liquid crystal display and thin film transistor with capacitive electrode structure

Method for manufacturing TFTs including steps of forming a control electrode and control electrode line on a substrate, forming insulating film on the control electrode and the control electrode line, cleaning the substrate with the insulating film formed by a chemical or physical means, forming oxide film on the surface of the control electrode and control electrode line exposed by a film lacking portion generated in the insulating film after cleaning, forming a semiconductor layer via the insulating film on the control electrode, and forming a pair of electrodes constituting a semiconductor element together with the semiconductor layer.

Method for manufacturing LCD and TFT

The present invention aims to extract a large electron beam and extend the service life of an electron source by effectively radiating an electron beam with low energy from a plasma chamber toward an ion extraction port, and optimally neutralizing space charges of ions in the vicinity of the ion extraction port. An electron source is installed behind a plasma chamber to control an extraction power supply, an electron accelerating power supply, and a lens power supply. Thereby, an electron beam is extracted from the power source, and accelerated. Then, the electron beam is carried through an electric field lens at a high speed, decelerated in the vicinity of the plasma chamber, then converged to radiate toward the ion extraction port. An aperture is installed at a crossover point of the electron beam to diminish backward flow of ionic gas from the plasma chamber to the electron source.

Ion source having plasma chamber, an electron source, and a plasma power

There is disclosed an electron shower apparatus which eliminates the adverse effect of a magnetic field on electrons and which provides electrons in sufficient quantity when primary electrons having low energy are employed. In the apparatus, the magnetic field generated by a filament current is decreased or eliminated by pulsing the filament current or by passing a current opposite in direction to the filament current in the vicinity of the filament current.

Electron shower apparatus including filament current control

An ion implantation apparatus includes an ion source having an arc chamber generating ions and a drawing electrode drawing ions from the arc chamber, a mass separator transporting only ions desired for implantation, an ion implantation chamber in which the material to be implanted by ions is placed, and a controller means for automatically controlling the distance between the arc chamber and the drawing electrode incrementally in accordance with a theoretical calculation using normalized perveance considering the kind of ions to be implanted, the accelerating voltage, and the ion current and current density distribution.

Ion implantation apparatus

An ion implantation apparatus comprises an ion beam measuring device to measure and analyze the shape of a beam projected on a substrate for ion implantation and the quantity of current obtained by the ion beam, an analyzing slit member having an opening whose width is changeable, which is located in the ion beam track to extract only implantation ions, and a shaping slit member having an opening whose width is changeable, which is located behind the analyzing slit member to determine the shape of the beam to be projected on the substrate for ion implantation, wherein the widths of the openings of the analyzing slit member and the shaping slit member are changed on the basis of the shape of the beam and the quantity of current obtained as a result of the measurement by the ion beam measuring device.

Growing community of inventors

Amagasaki, Japan

Kazuhiko Noguchi