Kabushiki Kaisha Toshiba

Fujitsu Corporation

Kazuhiko Nakamura

Kouji Matsuo

Takaharu Itani

Koji Matsuo

Shigeru Hidesawa

Daisuke Morita

A semiconductor device manufacturing method has forming a metal film containing platinum by depositing a metal on a source/drain diffusion layer primarily made of silicon formed on a semiconductor substrate and on a device isolation insulating film; forming a silicide film by silicidation of an upper part of the source/drain diffusion layer by causing a reaction between silicon in the source/drain diffusion layer and the metal on the source/drain diffusion layer by a first heating processing; forming a metal oxide film by a oxidation processing to oxidize selectively at least a surface of the metal film on the device isolation insulating film; increasing the concentration of silicon in the silicide film by a second heating processing; and selectively removing the metal oxide film and an unreacted part of the metal film on the device isolation insulating film.

Semiconductor device manufacturing method

A semiconductor device manufacturing method has conducting first heating processing at a first heating temperature in an inert atmosphere under a first pressure in a first process chamber to silicide an upper part of the source-drain diffusion layer and form a silicide film; conducting second heating processing at a second heating temperature in an oxidizing atmosphere under a second pressure in a second process chamber to selectively oxidize at least a surface of the metal film on the element isolating insulation film and form a metal oxide film; conducting third heating processing at a third heating temperature which is higher than the first heating temperature and the second heating temperature in an atmosphere in a third process chamber to increase a concentration of silicon in the silicide film; and selectively removing the metal oxide film and an unreacted part of the metal film on the element isolating insulation film.

The present invention relates to the client machine and the server machine and the like which are connected to the communication line, and answers are accurately given to a question of a user of the client machine according to a level of that question. First, the solution of the answer is attempted inside the client machine (primary answer section) and, if not solved, an enquiry is made to the server machine (secondary answer request section) and, if not yet solved, a mail is transmitted to a support window (e-mail soft).

Growing community of inventors

Kawasaki, Japan

Kazuhiko Nakamura