Toshiba Memory Corporation

Kioxia Corporation

Kazuhiko Nakamura

Ippei Kume

Yuki Noda

Shinya Okuda

Koichi Sato

A device includes a substrate having a first-face and a second-face. An electrode is provided in a through hole that penetrates through the substrate between the first-face and the second-face. A first-insulator is provided in the substrate and protrudes in a radial direction from an opening end of the through hole on a side close to the second-face to a center of the through hole as viewed from above the first-face. A second-insulator protrudes in the radial direction from the first-insulator as viewed from above the first-face, is thinner than the first-insulator, and is in contact with the electrode. A third-insulator is provided between an inner wall of the through hole and the electrode, and includes a first-portion that is in contact with the first-insulator and a second-portion that is in contact with the inner wall of the through hole and is closer to the second-face than the first-portion.

Semiconductor device and manufacturing method thereof

A semiconductor device according to an embodiment includes a semiconductor substrate including a first face having semiconductor elements, and a second face on an opposite side to the first face. A first insulating film is located on the first face of the semiconductor substrate. A conductor is located on the first insulating film. A metal electrode is located between the first face and the second face and passes through the semiconductor substrate to be in contact with the conductor. A second insulating film is located between the metal electrode and the semiconductor substrate. A boundary face between the first insulating film and the second insulating film is located on a side of the conductor relative to the first face of the semiconductor substrate and is inclined to approach the conductor toward a center portion of the metal electrode.

A method of producing a semiconductor device includes forming, on a semiconductor substrate comprising a first surface on which an insulating layer covering a wiring structure and a first through via passing through the insulating layer are formed and a second surface opposed to, and facing away from, the first surface, a patterned first insulating film comprising at least one opening therethrough on the second surface, forming a through via hole inwardly of the second surface within which the wiring structure is exposed, by anisotropic dry etching into the second surface side of the semiconductor substrate through the at least one opening in the first insulating film, using a gas mixture containing SF, O, SiF, and at least one of CF, Cl, BCl, CFI, and HBr, and forming a second through via in the through via hole.

Growing community of inventors

Nagoya, Japan

Kazuhiko Nakamura