Maruzen Petrochemical Company, Limited

Kazuhiko Mizuno

Takanori Yamagishi

Tomo Oikawa

Ichiro Kato

Satoshi Yamaguchi

Hiroshi Yamazaki

Toshifumi Takemori

Shigeharu Yamamoto

Sakae Kamiyama

Yoko Furuyama

Yoji Suzuki

Solving problems in the prior art, provided are a resist polymer which is small in lot-to-lot, reactor-to-reactor and scale-to-scale variations, and contains no high polymer, is excellent in solubility and storage stability, and is suitable for fine pattern formation, and a method for production thereof. The present invention provides the resist polymer at least having a repeating unit having a structure which is decomposed by an acid to become soluble in an alkali developer and a repeating unit having a polar group to enhance adhesion to a substrate, characterized in that a peak area of a high molecular weight component (high polymer) with molecular weight of 100,000 or more is 0.1% or less based on an entire peak area in a molecular weight distribution determined, by gel permeation chromatography (GPC).

Resist polymer and method for producing the polymer

A method for prevention of increase in particles in copolymer for semiconductor resist, which comprises passing, through a filter containing a resin having an amino group and/or an amide bond a copolymer solution for semiconductor resist which contains a copolymer for semiconductor resist having a polar group-containing recurring unit and an alicyclic structure-containing recurring unit and which contains no ionic additive. With the method, there can be obtained a copolymer semiconductor resist, which can be suitably used in a resist film used for formation of a fine pattern in semiconductor production and which is very low in formation of particle s during storage and accordingly generates substantially no defect after development.

Method for prevention of increase in particles in copolymer for semiconductor resist

Provided are a preparation process of a copolymer for semiconductor lithography, suited for a film forming composition used for the formation of minute patterns necessary for semiconductor fabrication, which comprises carrying out radical polymerization of at least two monomers having an ethylenic double bond in the presence of a polymerization initiator in a polymerization solvent, while causing to exist, in the solution containing the monomers, a polymerization inhibitive component; and a copolymer for semiconductor lithography prepared by the above-described process, and contains no high polymer, has excellent storage stability and generates remarkably less defects in resist pattern when used for semiconductor lithography.

Preparation process of copolymer for semiconductor lithography and a copolymer for semiconductor lithography available by this process

An olefinic copolymer having a cyclic structure is prepared by copolymerizing a) ethylene (M1) and b) dicyclopentadiene or tricyclopentadiene (M2), and, optionally c) a cyclic olefin (M3), in the presence of a catalyst which contains a metallocene compound (A) having formula &lsqb;1&rsqb;: H C(R&prime; Cp)(R&Prime; Cp)MX &lsqb;1&rsqb;, wherein M is zirconium or hafnium, Cp has a cyclopentadienyl skeleton, each of R&prime; and R&Prime; is a hydrocarbon group having 1 to 10 carbon atoms, each of two X's which may be the same or different from each other, is a halogen, a hydrogen, a hydrocarbon group having 1 to 20 carbon atoms, a halogenated hydrocarbon group, an alkylamino group, an alkoxy group, an aryloxy group of the formula &mdash;O&mdash;Ar&mdash;Y , a thioalkyl group, or a thioaryl group of the formula &mdash;S&mdash;Ar&mdash;Y ; wherein Ar is an aromatic ring, Y is a halogen, a hydrogen, a hydrocarbon group having 1 to 20 carbon atoms, a halogenated hydrocarbon group, an alkoxy group, an alkylamino group, a cyano group or a nitro group, and p is an integer of from 1 to 5, and each of m and n is an integer of from 0 to 4, provided that m and n are not equal, and m&plus;n is an integer of from 3 to 6, and an aluminoxane (B), is used.

Method for producing an olefin type copolymer having a cyclic structure

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Sodegaura, Japan

Kazuhiko Mizuno