Nippon Steel Corporation

Kazuhiko Kawamura

Kazuo Yamamoto

Koichi Kitamura

Hidenori Mimura

Yasumitsu Ohta

Kazuyoshi Sai

Satoshi Kanazawa

Hikaru Sakamoto

Noboru Otani

Gen Hashiguchi

A field-emitter having stable electrical properties, a long service life and a very small electron emission voltage is provided. The cathode of the element has a strongly sharpened projection at the tip end, and a smooth connection between the projection and the body portion. In the method of manufacturing the elements, cathodes are produced with a high reproducibility by using a mold produced by forming concave portions in the silicon and oxidizing the layer thereon, whereby the spacing between the cathode and the gate electrode is determined by the thickness of the silicon oxide layer, and the position of the cathode is determined by the silicon oxide layer embedded in the silicon substrate, by using an etching stop method based on an electrochemical etching process.

Method of manufacturing field-emitter

A pin diode having an incident layer which includes 1 to 10% of microcrystallized silicon is formed in a condition where a molar ratio of hydrogen to monosilane is 5:1 to 100:1 and applied power is 0.001 to 0.05 W/cm.sup.2. The pin diode as well as a contact image sensor comprising the same as excellent photoelectric transfer efficiency.

Diode and producing method thereof and contact image sensor device

Growing community of inventors

Kawasaki, Japan

Kazuhiko Kawamura