Tdk Corporation

Oki Electric Industry Co., Ltd.

Japan Aviation Electronics Industry, Limited

Nippon Steel Corporation

Kazuhiko Itoh

Yoshikazu Shimura

Takashi Kajino

Atsushi Hitomi

Akira Kakinuma

Kazutaka Fujita

Hisayuki Abe

Katsuyuki Ito

Takashi Ota

Minoru Takaya

Hisashi Kobuke

Naoji Akutsu

Toshikazu Endo

Masami Sasaki

Teiichi Tanaka

Takehiko Okubo

Koichi Negishi

Izumi Kataoka

A semiconductor ceramic composition including a compound represented by the following general formula (1) as a main component.(BaBiARE)(TiTM)O&#x2003;&#x2003;(1)(wherein, A represents both elements of Na and K; RE is at least one element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Gd, Dy and Er; and TM is at least one element selected from the group consisting of V, Nb and Ta.)0.01&#x2264;x&#x2264;0.15&#x2003;&#x2003;(2)x&#x2264;y&#x2264;0.3&#x2003;&#x2003;(3)0&#x2264;()&#x2264;0.01&#x2003;&#x2003;(4)&#x2003;&#x2003;(5)&#x2003;&#x2003;(6)0.950&#x2264;m&#x2264;1.050&#x2003;&#x2003;(7)further, 0.001 mol to 0.055 mol of Ca is included and the ratio of Na/(Na+K) is 0.1 or more and less than 1.

Semiconductor ceramic composition and PTC thermistor

A barium titanate based PTC thermistor ceramic composition without using Pb. Its Curie temperature is shifted to a temperature higher than 120&#xb0; C. The PTC thermistor can readily turn semiconductive even if it is sintered in air. The resistivity at 25&#xb0; C. is low and the variation rate of the resistivity at 25&#xb0; C. with time is little. The PTC thermistor ceramic composition includes a sintered body having a barium titanate based compound represented by formula (1) as the main component, (BaBiARE)(TiTM)O(1), wherein, 1.02y&#x2266;x&#x2266;1.5y (2), 0.007&#x2266;y&#x2266;0.125 (3), 0&#x2266;(w+z)&#x2266;0.01 (4), 0.97&#x2266;&#x3b1;&#x2266;1.06 (5), and the sintered body contains Ca in a ratio of 0.01 mol or more and less than 0.05 mol relative to 1 mol of Ti site in terms of element.

PTC thermistor ceramic composition and PTC thermistor element

A semiconductor ceramic composition with small resistivity at room temperature and large temperature coefficient of resistance is provided; the composition is represented by formula,(BaBiARE)(TiTM)O&#x2003;&#x2003;(1),(wherein, A is at least one element from Na or K, RE is at least one element from the group consisting of Y, La, Ce, Pr, Nd, Sm, Gd, Dy and Er, TM is at least one element from the group consisting of V, Nb and Ta, and w, x, y, z (each in mol) and the mole ratio m of Ba site to Ti site satisfy the following in equations,0.007&#x2266;&#x2266;0.125&#x2003;&#x2003;(2)&#x2266;2.0&#x2003;&#x2003;(3)0&#x2266;()&#x2266;0.010&#x2003;&#x2003;(4)0.940&#x2266;&#x2266;0.999&#x2003;&#x2003;(5)),and further includes Sr in a proportion of 0.010 mol or more and 0.050 mol or less relative to 1 mol of Ti site, and the mole ratio u of Sr and the mole ratio x of Bi satisfy the following in equation,&#x2266;1.8&#x2212;0.008&#x2003;&#x2003;(6).

A semiconductor ceramic composition which includes a compound represented by the following formula (1) as a main component, (BaBiARE)(TiTM)O(1) (wherein, A is at least one element selected from Na or K, RE is at least one element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Gd, Dy and Er, TM is at least one element selected from the group consisting of V, Nb and Ta, w, x, y, z and m satisfy the following relationships of (2)&#x2dc;(5), 0.007&#x2266;x&#x2266;0.125 (2), x&#x3c;y&#x2266;2.0x (3), 0&#x2266;(w+z)&#x2266;0.01 (4), 0.94&#x2266;m&#x2266;0.999 (5)). And the semiconductor ceramic composition includes Ca in a proportion of 0.01&#x2dc;0.055 mol in terms of element relative to 1 mol of Ti sites.

A multilayer PTC thermistorincludes a ceramic bodyhaving a plurality of ceramic layersand internal electrodesbetween adjacent ceramic layers, external electrodeson the end facesof the ceramic body, and a glass layeron the surfacesof the ceramic body, the glass layercontaining an oxide of at least one element selected from the group consisting of zinc and bismuth as the major component, wherein the alkali oxide content of the glass layer is no greater than 0.8 mass %.

Multilayer PTC thermistor

Provided are a stacked electronic part that can sufficiently suppress plating deposition on the surface of a porous green body when a terminal electrode is formed on an external electrode, thereby enabling a decrease in the reliability of products to be prevented, and a method of manufacturing the stacked electronic part. The stacked electronic partis a PTC thermistor having a stacked bodycontaining a porous green bodymade of ceramics and having a plurality of vacancies and a plurality of internal electrodesformed within the porous green bodyand is provided with at least one unit structurein which the porous green bodyand the internal electrodeare stacked. External electrodesare connected to the internal electrodeand upon the external electrodesare formed terminal electrodesby plating. Resin is filled in the plurality of vacancies of the porous green bodyat a filling ratio of not less than 60%.

Stacked electronic part and method of manufacturing the same

A stacked PTC thermistorcomprises a bodyobtained by alternating lamination of a semiconductor ceramic layerand an internal electrode, and a pair of external electrodesprovided at the edge facesof the bodyand electrically connected with the internal electrode. The semiconductor ceramic layeris composed of a porous sintered compact containing crystal grains of a barium titanate-based compound, and an alkali metal element is preferentially distributed in at least one of the grain boundaries and voids of the sintered compact.

Stacked PTC thermistor and process for its production

A core material-including organic core board or inorganic sintered boardhaving a plurality of band-shaped conductor patternsformed on its front and rear surfaces is sliced in a direction crossing the band-shaped conductor patterns. End portions of the band-shaped conductor patternsexposed on each of cut surfaces of the core boardare connected to one another by bridging conductor patterns formed on the cut surfaces. In this manner, at least one helical coil is provided. The inner diameter of the helical coil can be kept constant while coil pitch accuracy can be kept good.

Inductive device and method for producing the same

A drying device, for use with an electrostatic recording apparatus arranged such that an electrostatic latent image of an image to be recorded is formed on a surface of a recording paper moving through a predetermined moving path and the latent image is developed by applying a liquid toner to the surface of the recording paper and for drying the recording paper after application of the liquid toner, includes an air blower or suction unit for supplying or drawing an air; and an air guiding mechanism for guiding the air from the air blower to outside or from outside to the air suction unit through an area adjacent to the surface of the recording paper, wherein the air guiding mechanism includes an air passage extending from the air blower or the air suction unit to the predetermined moving path and an opening defined between at least by a part of a side wall of the air passage and the surface of the recording paper moving through the predetermined path for allowing the air to pass therethrough to outside or the air suction unit and the opening has a size sufficiently smaller than a size of a cross-section of the air passage perpendicular to a direction in which the dry air flows through the air passage to regulate flow of the dry air when passing the opening.

Drying device for electrostatic recording apparatus

An electron beam emitted from an electron gun is applied to an object whose crystal structure is being examined in a vacuum, and electron beams diffracted by the object are introduced into an energy discriminator of an energy analyzer which discriminates an electron beam or beams having a predetermined energy. The thus discriminated electron beams is converted by an electron beam detector into an electric signal for measuring the diffracted electron beam intensity.

Apparatus for measuring a diffraction pattern of electron beams having

On a substrate materials of different X-ray refractive indexes, for example, silicon (si) and molybdenum (Mo), are alternately deposited to form a multilayer film composed of silicon nd molybdenum layers and a hydrogenated interface layer is formed between each pair of adjacent layers.

Multilayer film reflector for soft X-rays

A counter has an electrically erasable and programmable read-only memory (EEPROM), a write circuit, and a read circuit. The EEPROM, which can be rewritten at least V times, is divided into count areas M.sub.O, . . . , M.sub.N each capable of storing count values from zero to V, and a number area for storing a number K from zero to N identifying the count area currently in use. The write circuit uses the count areas M.sub.O, . . . , M.sub.N in succession to store counts as high as N.times.V. The read circuit obtains the current count value by reading K from the number area, reading the contents C of the Kth count area M.sub.K, and calculating C+(V.times.K).

Counter

In an electrophotographic recording device which includes a number of consumable parts, there is provided a first memory for storing a currently integrated total number of prints, and a number of prints at replacement of each consumable part. A second memory stores a number of lifetime prints, which is a conversion of the life of each part into a number of prints. A processor performs a first calculation to calculate a number of prints for replaced consumable parts after such replacement and a second calculation to calculate a wear rate of the replaced consumable parts from the number of lifetime prints read out from the second memory, and from the number of prints calculated by the first calculation. An indication section indicates the wear rate obtained from the second calculation. The number of prints stored in the first memory for the consumable parts at replacement is written into the current total number of prints.

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Tokyo, Japan

Kazuhiko Itoh