Matsushita Electric Industrial Co., Ltd.

Shindengen Electric Manufacturing Company Limited

Nissan Motor Company Limited

Kazuhiko Ito

Atsushi Ogasawara

Koji Ito

Koya Muyari

Shigeru Horii

Masataka Ozawa

Nobuhisa Yoshikawa

Takeshi Saito

Teruaki Shigeta

Koji Miyazaki

Masayoshi Gyoten

Kouji Miyazaki

Yoshio Matsuno

Kazutaka Koyama

Takayuki Kamitani

Shinichiro Choji

Atsuo Waki

Masakatsu Kichibayashi

Mamoru Takeda

Kazushige Sugita

Tetsuya Asada

Takashi Katsura

Kenichiro Takahashi

Hiroyuki Kamishima

Yoshiro Ogata

Tetsuya Tahara

Takayuki Imai

Toshimasa Miwa

Tetsuro Hirohama

Masakazu Imai

Masakatsu Ozawa

Suguru Nakayama

Provided is a method of manufacturing a semiconductor device which includes, in the following order: a first step of preparing a semiconductor element which includes a pn junction exposure portion; a second step of forming an insulation layer such that the insulation layer covers the pn junction exposure portion; and a third step of forming a glass layer on the insulation layer where a layer made of glass composition for protecting a semiconductor junction is formed on the insulation layer and, thereafter, the layer made of glass composition for protecting a semiconductor junction is baked.

Method of manufacturing semiconductor device and semiconductor device

Provided is a glass composition for protecting a semiconductor junction which contains at least SiO, BO, AlO, ZnO and at least two oxides of alkaline earth metals selected from a group consisting of CaO, MgO and BaO, and substantially contains none of Pb, As, Sb, Li, Na and K, wherein an average linear expansion coefficient within a temperature range of 50&#xb0; C. to 550&#xb0; C. falls within a range of 3.33&#xd7;10to 4.13&#xd7;10. A semiconductor device having high breakdown strength can be manufactured using such a glass material containing no lead in the same manner as a conventional case where 'a glass material containing lead silicate as a main component' is used.

Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device

A resin-sealed semiconductor deviceof the present invention includes: a mesa-type semiconductor elementwhich includes a mesa-type semiconductor base body having a pn-junction exposure portion in an outer peripheral tapered region which surrounds a mesa region, and a glass layer which covers at least the outer peripheral tapered region; and a molding resinwhich seals the mesa-type semiconductor element, wherein the mesa-type semiconductor elementincludes a glass layer which substantially contains no Pb as the glass layer. The resin-sealed semiconductor device of the present invention can acquire higher resistance to a reverse bias at a high temperature than a conventional resin-sealed semiconductor device, although the resin-sealed semiconductor device of the present invention has the structure where the mesa-type semiconductor element is molded with a resin in the same manner as the conventional resin-sealed semiconductor device.

Resin-sealed semiconductor device and method of manufacturing resin-sealed semiconductor device

A resin-sealed semiconductor device includes a mesa-type semiconductor element which includes a mesa-type semiconductor base body having a pn junction exposure portion in an outer peripheral tapered region surrounding a mesa region, and a glass layer which covers at least the outer peripheral tapered region; and a molding resin which seals the mesa-type semiconductor element, wherein the glass layer is formed by forming a layer made of a predetermined glass composition for protecting a semiconductor junction which substantially contains no Pb such that the layer covers the outer peripheral tapered region and, subsequently, by baking the layer made of the glass composition for protecting a semiconductor junction.

Resin-sealed semiconductor device and method of manufacturing the same

Provided is a glass composition for protecting a semiconductor junction which contains at least SiO, AlO, ZnO, CaO and 3 mol % to 10 mol % of BO, and substantially contains none of Pb, P, As, Sb, Li, Na and K. It is preferable that a content of SiOfalls within a range of 32 mol % to 48 mol %, a content of AlOfalls within a range of 9 mol % to 13 mol %, a content of ZnO falls within a range of 18 mol % to 28 mol %, a content of CaO falls within a range of 15 mol % to 23 mol %, and a content of BOfalls within a range of 3 mol % to 10 mol %.

A glass composition for protecting a semiconductor junction contains at least SiO, BO, AlO, ZnO, and at least two oxides of alkaline earth metal selected from the group consisting of CaO, MgO and BaO, and substantially contains none of Pb, P, As, Sb, Li, Na and K.

A glass composition for protecting a semiconductor junction contains at least SiO, AlO, MO, and nickel oxide, and substantially contains none of Pb, P, As, Sb, Li, Na and K (M in MO indicates one of alkali earth metals).

A tire pressure monitoring apparatus includes transmitter units provided, respectively, for sensing tire pressures of a vehicle, and receiver units for receiving wireless signals from the transmitter units. A tire pressure monitoring controller registers tire identification code transmitted from each transmitter unit, by measuring signal strengths of wireless signals, and comparing the signal strengths.

Tire pressure monitoring apparatus and process

A fluorescent lamp operating apparatus comprises a power switching element electrically connected to a fluorescent lamp having a pair of electrodes, and means for limiting the current flowing through the power switching element by controlling its conductance so as to prevent the power switching element from being broken by a large current flowing from the power line through the fluorescent lamp when the impedance between the pair electrodes decreases from infinity at the start-up of the fluorescent lamp.

Fluorescent lamp operating apparatus

In apparatus and method for cruise control for an automotive vehicle, a controller is provided for running a self-diagnosis upon a receipt of the power supply via the first switch, for determining whether the apparatus operates normally or abnormally as a result of the run of the self-diagnosis, and for starting an acceptance of an input of the signal from the second switch when determining that the apparatus operates normally as the result of the self-diagnosis, and for issuing a warning signal when determining that the apparatus operates abnormally when the input of the signal from the second switch occurs at a time of the start of the acceptance of the input of the signal from the second switch and the input of the signal from the second switch occurs after a predetermined time has passed from the time when the acceptance of the input of the signal from the second switch occurs.

Cruise control apparatus and method for automotive vehicle

The present invention relates to an inverter driven lamp arrangement. The arrangement provides for the sensing of both lamp voltage and current. The arrangement also provides for a large current during times of low voltage and a small current during times of high voltage. The sensing of lamp current is done by a current detector that is connected to a resonance circuit whose output is applied in signal form to a lamp start control circuit. The resonant circuit is a series connected resonant circuit composed of a choke coil and a first capacitor. This series connected arrangement is further connected in series with a second non-resonant capacitor. Also the arrangement includes circuitry to gradually reduce the frequency of the inverter just after the lamp starts.

An inverter driven lamp arrangement having a current detection circuitry

A fluorescent lamp starter which includes: a series circuit to be connected to a power source for supplying an AC voltage, including a ballast and a fluorescent lamp equipped with electrodes; a transistor having a collector and an emitter connected through a diode between the electrodes on an opposite side of the fluorescent lamp in which the power source is not connected; a control voltage supply means having a resistance means and a capacitor, which are operated by a voltage between the collector and the emitter of the transistor; and a transistor base control means for switching the transistor by a total voltage of a part of a voltage generated in the resistance means of the control voltage supply means and a voltage generated in the capacitor thereof.

Fluorescent lamp starter having a transistor base control means

In a discharge-lamp lighting apparatus for lighting a discharge lamp such as a metal halide lamp, there is provided a lighting control circuit which controls its output in a starting time of the discharge lamp in response to at least a length of the last off-time and an on-time after the start of discharging; and a power supplied to the discharge lamp is controlled in accordance with this output of the lighting control circuit.

Apparatus for controlling the power to a discharge-lamp

To illuminate only a lower room space below the front and rear seat and the vehicle room floor, at least one first foot lamp is disposed on the lower surface of the instrument panel at a height roughly the same as that of the front seat cushion so as to illuminate a front floor before the front seat and a middle floor under the front seat. Further, at least one second foot lamp is preferably disposed on the rearmost and downmost position of the front seat cushion so as to further illuminate the middle floor under the front seat and a rear floor before the rear seat. Since the vehicle room floor is illuminated brighter than that of the upper room space, the passengers' eyes usually see the vehicle floor the farthest away from the passenger's eyes. Therefore, they feel that the vehicle room is broad and at ease at night, and can easily pickup an object on the floor, because it is possible to minimize the occurrence of shadows of objects on the room floor.

Growing community of inventors

Hanno, Japan

Kazuhiko Ito