Sharp Kabushiki Kaisha Corporation

Other

Hikaru Kobayashi

Kazuhiko Inoguchi

Haruhisa Takiguchi

Hiroaki Kudo

Toshiyuki Okumura

Satoshi Sugahara

Chitose Nakanishi

Mototaka Taneya

Takayuki Yuasa

Shigeki Imai

Fumihiro Konushi

Susumu Omi

Yoshihiro Ueta

Hiroshi Nakatsu

Seiki Yano

Akinori Seki

Tohru Ueda

Osamu Sakai

Sadahiko Yasukawa

Yoshinori Higami

Hiroshi Nakatu

In a manufacturing method of a thin film transistor (), the oxide film forming step is performed whereby: a process-target substrate () having a surface on which a gate oxide film () should be formed is immersed in an oxidizing solution containing an active oxidizing species; and a gate oxide film () is formed through direct oxidation of polycrystalline silicon () on the process-target substrate (). With this step, a silicon dioxide film () is formed while growing a silicon dioxide film () on the process-target substrate. Accordingly, the interface between the polycrystalline silicon () and the gate oxide film () is kept clean. The gate oxide film () is uniformly formed with excellent quality in insulation tolerance and other properties. Therefore, the thin film transistor () contains a high quality oxide film with excellent insulation tolerance and other properties which can be formed at low temperature.

Thin film transistor, method of manufacturing same, display device, method of modifying an oxide film, method of forming an oxide film, semiconductor device, method of manufacturing semiconductor device, and apparatus for manufacturing semiconductor device

In a manufacturing method of a thin film transistor (), the oxide film forming step is performed whereby: a process-target substrate () having a surface on which a gate oxide film () should be formed is immersed in an oxidizing solution containing a; active oxidizing species; and a gate oxide film () is formed through direct oxidation of polycrystalline silicon () on the process-target substrate (). With this step, a silicon dioxide film () is formed while growing a silicon dioxide film () on the process-target substrate. Accordingly, the interface between the polycrystalline silicon () and the gate oxide film () is kept clean. The gate oxide film () is uniformly formed with excellent quality in insulation tolerance and other properties. Therefore, the thin film transistor () contains a high quality oxide film with excellent insulation tolerance and other properties which can be formed at low temperature.

A liquid crystal display device includes an active matrix substrate; a counter substrate; and a liquid crystal layer interposed between the active matrix substrate and the counter substrate. The active matrix substrate includes a plate; a thin film transistor provided on the plate; and a side light shielding layer for covering at least a portion of a side surface of the thin film transistor.

Liquid crystal display device with side light shielding layers and method for producing the same

A nitride-type compound semiconductor laser device includes a substrate and a layered structure provided on the substrate. A light absorption layer having a bandgap smaller than a bandgap of an active layer in the layered structure is provided in a position between the cladding layer, which is provided on a side opposite to a mount surface with respect to the active layer, and a surface of the layered structure which is opposite to the mount surface.

Nitride-type compound semiconductor laser device and laser apparatus incorporating the same

A plasma address electrooptical device is provided, wherein the distance between a liquid crystal drive electrode and an adjacent liquid crystal drive electrode is set to be equal to or greater than the distance between the lower surface of said liquid crystal drive electrode and the lower surface of a dielectric layer . Moreover, by providing additional electrodes between liquid crystal drive electrodes of the plasma address electrooptical device, the display leakage to adjacent pixels is reduced even further.

Plasma address electrooptical device

The present invention provides a method for producing a group III-V compound semiconductor including nitrogen as a group V element by an organometallic vapor phase growth method. An organometallic as a group III material, an amine type material or ammonia as a group V material and an organic compound which is decomposed by heating so as to generate radicals are used to perform crystal growth.

Method for producing group III-V compound semiconductor and fabricating

A semiconductor laser device including Ga.sub.x Al.sub.y In.sub.1-x-y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1)) layers has an InN contact layer, which has a thickness ranging, preferably, from 0.1 .mu.m to 1.0 .mu.m inclusive. The contact layer is formed by a MOCVD method. When materials for formation of the InN contact layer are fed into a reactor, an organic radical material is also fed and a substrate temperature is controlled to be about 800.degree. C. during the process of growth of the InN layer.

Semiconductor laser device having an inn contact layer and a method of

A semiconductor device of the present invention includes: an SiC substrate; an SiC growth layer for absorbing a grating defect of the SiC substrate and/or a damage at and in the vicinity of a surface of the SiC substrate; and Ga.sub.x Al.sub.y In.sub.1-x-y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) layer formed on the SiC growth layer.

Semiconductor device with SiC and GaAlInN

A semiconductor laser of the present invention includes: a semiconductor substrate, a multi-layered structure formed on the semiconductor substrate and a current and light confining section formed on the multi-layered structure, wherein the current and light confining section includes at least two multi-layered current and light confining portions each having a laser beam transmission layer and a laser beam absorption layer formed on the laser beam transmission layer, and at least one stripe groove which spatially separates the at least two current and light confining portions; wherein an equivalent refractive index in the multi-layered current and light confining portions with respect to a laser beam in a fundamental transverse mode is made smaller than that within the stripe groove; wherein the multi-layered structure includes an active layer, and the active layer has a region positioned below the stripe groove of the current and light confining section and regions positioned below a respective one of the multi-layered current and light confining portions; and wherein a optical confinement factor .GAMMA. of the active layer outside the stripe groove with respect to a laser beam in a guide mode is larger than that outside the stripe groove with respect to a laser beam in an anti-guide mode.

Semiconductor laser

A semiconductor laser device with window regions according to the present invention is provided, in which a double hetero structure including cladding layers and an active layer sandwiched by the cladding layers is formed on a semiconductor substrate, the double hetero structure is buried in burying layers with a bandgap larger than that of the active layer, and the burying layers form window regions situated at both end facets of the double hetero structure, wherein the window regions have a waveguide structure including a plurality of semiconductor layers with different bandgaps.

Semiconductor laser device with window regions

A buried stripe type semiconductor laser device having a mesa stripe whose side faces are {111} facets and having a current confinement structure under epitaxial layers burying the mesa stripe is disclosed. The buried stripe type semiconductor laser device comprises a (100) semiconductor substrate having a stripe-shaped ridge in the &lt;011&gt; direction, a multi-layer film of a double hetero structure formed on the upper surface of the stripe-shaped ridge. The mutil-layer film includes a laser oscillating active layer of a smaller width than that of the stripe-shaped ridge. The current confinement means are formed at both sides of the mesa stripe on the semiconductor substrate. In addition, a method of fabricating a buried stripe type semiconductor laser device having no raised portion above a mesa stripe of a substrate is disclosed. The laser device can be mounted in position with the epitaxial layer side down, without the mesa stripe being damaged or strained.

Buried stripe type semiconductor laser device

A semiconductor device includes a multiple layer structure including a substantially flat active layer, and a first semiconductor layer and a second semiconductor layer adjacent to each other, the semiconductor layers having a corrugation at an interface therebetween; and a generating device which is connected to the multiple layer structure. An electromagnetic field intensity distribution is generated by use of the generating device in a waveguide region including the active layer, and the active layer includes a gain distribution having a distribution pattern corresponding to the corrugation. The multiple layer structure is produced by forming the corrugation on an upper surface of the first semiconductor layer, and forming the rest of the multiple layer structure including the second semiconductor layer and the active layer by using a vapor phase growth method once so as to make the active layer substantially flat. Then, the generating device is formed to be in contact with the multiple layer structure.

Semiconductor device and a method for producing the same

A distributed feedback semiconductor laser device comprising a current blocking structure having a stripe groove, and a diffraction grating formed in the bottom of the stripe groove. The current blocking structure is formed over an active layer for laser oscillation, and it includes an etch stop layer against a groove etching in a lower potion of the current blocking structure. The refractive index distribution in transverse directions inside the stripe groove is controlled by the thickness of the optical guiding layer, enabling oscillation of the fundamental transverse mode.

Distributed feedback semiconductor laser device and a method of

In a first crystal growth step, a first cladding layer, an active layer, and an optical wave-guide layer are sequentially grown on a semiconductor substrate. A diffraction grating is formed at a surface of the optical waveguide layer. In a second crystal growth step, a current block layer is grown on the optical waveguide layer having the diffraction grating. The current block layer is selectively etched to expose the diffraction grating and thus to form a stripe groove. In a third crystal growth step, a second cladding layer is grown on the diffraction grating inside the stripe groove and on the current block layer.

Growing community of inventors

Nara, Japan

Kazuhiko Inoguchi