Fujitsu Corporation

Sumitomo Electric Industries, Limited

Kazuhiko Horino

Akito Kuramata

Shinichi Kubota

Naoya Kono

Kay Domen

Reiko Soejima

A susceptor for securing a semiconductor wafer with an orientation flat within a pocket of the susceptor is disclosed. The pocket provides a first inner wall extending along the orientation flat and a second wall facing an arched periphery of the semiconductor wafer. The first inner wall provides a hollow extending outwardly from the first inner wall. The hollow can have a step, a slope, or a chamfered corner.

Susceptor having a hollow in its wall facing the orientation flat of a semiconductor wafer

A semiconductor growing apparatus including: a susceptor having a main face and a side face, the main face receiving a substrate for growing a semiconductor layer, and the side face having a groove; a heating element for heating the susceptor.

Semiconductor growing apparatus

A semiconductor optical device including: a substrate including a first region and a second region; a first optical waveguide disposed on the first region, the first optical waveguide including a core layer and a cladding layer disposed on the core layer, the cladding layer including a first cladding region and a semiconductor layer disposed on the first cladding region, the first optical waveguide extending from an end facet of the semiconductor optical device to a boundary between the first region and the second region; a second optical waveguide disposed on the second region; and a region disposed on the cladding layer, the region having a lower refractive index than that of the first cladding region. The semiconductor layer has a higher refractive index than that of the first cladding region. The thickness of the core layer monotonically increases from the end facet toward the boundary.

Semiconductor optical device

A method for manufacturing a semiconductor device includes the steps of preparing a substrate; forming first and second layers on the substrate; forming a suspended mask on the substrate by etching the first and second layers, the suspended mask including a shield portion having a space between the second layer and the substrate, a terrace portion being disposed apart from the shield portion, a supporting portion connecting the shield portion and the terrace portion, and an opening between the shield portion and the terrace portion, the shield portion extending in a first direction; and growing a semiconductor layer on a surface of the substrate in the first region and the fourth region using the suspended mask. The shield portion has a width varying in the first direction, and the semiconductor layer has a thickness varying in the first direction.

Semiconductor device and method for manufacturing the same

An optical semiconductor device includes an SiC substrate having an n-type conductivity, and an AlGaN buffer layer having an n-type conductivity formed on the SiC substrate with a composition represented as AlGaN, wherein the AlGaN buffer layer has a carrier density in the range between 3&#xd7;10&#x2013;1&#xd7;10cm, and the compositional parameter x is larger than 0 but smaller than 0.4 (0&#x3c;x&#x3c;0.4).

Optical semiconductor device having an epitaxial layer of III-V compound semiconductor material containing N as a group V element

A lateral mode controlling layer made of AlN having a thickness of more than 0 nm but less than 300 nm is formed in at least one cladding layer of an n-type cladding layer and a p-type cladding layer or formed between the at least one cladding layer and the active layer. Also, a mask layer is formed on a substrate, then an AlN layer is formed to cover it, and then the AlN layer is lifted off by using a solution for etching. the mask layer. Accordingly, lateral mode control of the group III-V compound semiconductor laser can be facilitated, the aspect ratio of the beam shape can be improved, and the damage caused by the Al layer growth and the patterning can be reduced.

Semiconductor light emitting device and method of manufacturing the same

A substrate is made of SiC. A plurality of Al Ga N patterns (0&lE;x&lE;1) is formed on a surface of the substrate and dispersively distributed in an in-plane of the substrate. An Al Ga N buffer layer (0&lE;y&lE;1) covers the surface of the substrate and the Al Ga N patterns. A laser structure is formed on the Al Ga N buffer layer. Since the AlGaN buffer layer is grown by using the AlGaN patterns as seed crystals, a dislocation density of a predetermined region in the AlGaN buffer layer can be lowered. The characteristics of a laser structure can be improved by forming the laser structure above the region having a low dislocation density. Since the AlGaN pattern has electric conductivity, the device resistance can be suppressed from being increased.

Semiconductor laser, semiconductor device, and their manufacture methods

A semiconductor light emitting device includes a second semiconductor layer, an active layer, a third semiconductor layer and a pair of electrodes. The second semiconductor layer is formed directly on the principal pane of a substrate or via a first semiconductor layer. The active layer is formed on the second semiconductor layer and has an energy band gap which is smaller than the energy band gap of the second semiconductor layer. The active layer is made of a semiconductor having an uniaxial anisotropy. The third semiconductor layer is formed on the active layer and has the energy band gap which is larger than the energy band gap of the active layer. The pair of electrodes supplies current to the second semiconductor layer, the active layer, and the third semiconductor layer in the film thickness direction. The film thickness direction of at least the active layer is different from the axis of the uniaxial anisotropy.

Growing community of inventors

Kanagawa, Japan

Kazuhiko Horino