Nec Corporation

Renesas Electronics Corporation

Teac Corporation

Nec Electronics Corporation

Kazuhiko Endo

Yoshihisa Matsubara

Toru Tatsumi

Yoshishige Matsumoto

Tatsuya Usami

Koichi Ohto

Noboru Morita

Kenzo Manabe

Dai Sato

Shinya Ito

Takashi Ishigami

Noriaki Oda

Akira Matsumoto

Tadahiko Horiuchi

Ko Noguchi

Masahiko Nakamae

Yoshitake Ohnishi

Heiji Watanabe

Manabu Iguchi

Motofumi Saitoh

Mikio Nakayama

Paul E Youngblood

Keisuke Shinoda

Takuo Watanabe

Toshikatsu Nishi

Daisuke Mitomi

Paul Youngblood

A digital mixer is disclosed having a plurality of displays and which applies a mixing process on an audio signal. The digital mixer includes an input interface, one or more processors, an output interface, at least a first display and a second display, and an operator. The operator includes a mode switching button for switching between a first mode and a second mode. The one or more processors are configured to cause parameter setting screens of audio signals of different channels to be displayed respectively on the first display and the second display when the mode switching button is set to the first mode, and cause different parameter setting screens of an audio signal of a single channel to be displayed respectively on the first display and the second display when the mode switching button is set to the second mode.

Digital mixer having plurality of displays

A mixing console is disclosed which enables temporary operation and display of channels of different layers with a simple operation. A digital mixing console includes a channel strip portion that has a plurality of channel strips having an operator which adjusts a parameter value for controlling an audio signal, and a layer setter that divides the channel strip portion into a plurality of blocks and sets layer data which define a channel to be operated and to be displayed for each of the blocks. When one or more processors detect an operation of FIX LAYER button which prohibits switching of the layer data to fix the layer data for each of the blocks, the one or more processors fix the layer data of the corresponding block.

Mixing console

A semiconductor device having, on a silicon substrate, a gate insulating film and a gate electrode in this order; wherein the gate insulating film comprises a nitrogen containing high-dielectric-constant insulating film which has a structure in which nitrogen is introduced into metal oxide or metal silicate; and the nitrogen concentration in the nitrogen containing high-dielectric-constant insulating film has a distribution in the direction of the film thickness; and a position at which the nitrogen concentration in the nitrogen containing high-dielectric-constant insulating film reaches the maximum in the direction of the film thickness is present in a region at a distance from the silicon substrate. A method of manufacturing a semiconductor device including introducing nitrogen by irradiating the high-dielectric-constant insulating film which is made of metal oxide or metal silicate, with a nitrogen containing plasma, is also provided.

Semiconductor device and its manufacturing method

There is provided a semiconductor device having, on a silicon substrate, a gate insulating film and a gate electrode in this order; wherein the gate insulating film comprises a nitrogen containing high-dielectric-constant insulating film which has a structure in which nitrogen is introduced into metal oxide or metal silicate; and the nitrogen concentration in the nitrogen containing high-dielectric-constant insulating film has a distribution in the direction of the film thickness; and a position at which the nitrogen concentration in the nitrogen containing high-dielectric-constant insulating film reaches the maximum in the direction of the film thickness is present in a region at a distance from the silicon substrate. A manufacturing method of a semiconductor device comprising the step of making the introduction of nitrogen by irradiating the high-dielectric-constant insulating film which is made of metal oxide or metal silicate, with a nitrogen containing plasma, is also provided. This improves the thermal stability of the high-dielectric-constant insulating film, suppresses the dopant penetration and, in addition, prevents electric characteristics of the interface with the silicon substrate from deteriorating.

An object of the present invention is to provide a semiconductor device which comprises a barrier film having a high etching selection ratio of the interlayer insulating film thereto, a good preventive function against the Cu diffusion, a low dielectric constant and excellent adhesiveness to the Cu interconnection and a manufacturing method thereof. The barrier film (for instance, a second barrier film) disposed between the interconnection or the via plug and its overlying interlayer insulating film is made to have a layered structure made of a plurality of films containing silicon and carbon (preferably, silicon, carbon and nitrogen), with different carbon contents, and, in particular, a low-carbon-concentration filmwith a small carbon content is set to be a lower layer therein and a high-carbon-concentration filmwith a large carbon content is set to be an upper layer therein, whereby the effectual prevention against the Cu diffusion, a high etching selection ratio and good adhesiveness to the Cu interconnection can be certainly provided by the presence of the low-carbon-concentration film, while the overall dielectric constant can be well reduced by the presence of the high-carbon-concentration film

Method of manufacturing a semiconductor device

The dielectric constants of SiC and SiCN that are currently the subjects of much investigation are both 4.5 to 5 or so and that of SiOC, 2.8 to 3.0 or so. With further miniaturization of the interconnection size and the spacing of interconnections brought about by the reduction in device size, there have arisen strong demands that dielectric constants should be further reduced. Furthermore, because the etching selection ratio of SiOC to SiCN as well as that of SiOC to SiC are small, if SiCN or SiC is used as the etching stopper film, the surface of the metal interconnection layer may be oxidized at the time of photoresist removal, which gives rise to a problem of high contact resistance. The present invention relates to an organic film made of one of SiOCH, SiCHN and SiCH that is formed using, as a source, a polyorganosilane whose C/Si ratio is at least 5 or greater and molecular weight is 100 or greater, and a semiconductor device wherein such an organic insulating film is used, and more particularly to a semiconductor device having a trench structure.

Organic insulating film, manufacturing method thereof, semiconductor device using such organic insulating film and manufacturing method thereof

Semiconductor device and manufacturing method thereof

A semiconductor device has an MIS (metal-insulating film-semiconductor) structure, and a film mainly containing Al, O, and N atoms is used on a semiconductor. Alternatively, a semiconductor device has an MIS structure, and a film mainly containing Al, O, and N atoms is provided as a gate insulating film on a channel region between a source and a drain. Characteristics required of a gate insulating film of a 0.05 &#x3bc;m-gate-length-generation semiconductor transistor are satisfied. In particular, no fixed charge is included in the film, and impurity diffusion is reduced.

High dielectric constant MOSFET device

The invention provides an insulator having a main component of silicon dioxide, wherein the insulator includes at least one kind of organic polymer such as benzene nucleuses distributed therein in order to reduce a dielectric constant thereof as well as a method of forming the same.

Method of forming a silica insulation film with a reduced dielectric constant

A method for forming a metal compound film includes alternate irradiation of an organometal compound and oxygen or nitrogen radicals to deposit monoatomic layers of the metal compound. The organometal compound includes zirconium, hafnium, lanthanide compounds. The resultant film includes little residual carbon and has excellent film characteristic with respect to leakage current.

Method for vapor deposition of a metal compound film

A switch device is provided which allows easy recognition of the operation amount of the switch device with an inexpensive structure and without the need for an operator to change the posture or the like, even when a blind spot region is generated in an indicator as a special indication region at the time of indicating the operation amount of the switch. When the special indication region on the indicator cannot be seen directly because it is blocked by a knob, the state of the indicator in the special indication region is expressed using a visible region on the indicator which is always visible. Thus, the operator can recognize the operation amount of the switch device in the blind spot region without changing the posture or the like and using a simple structure of the switch device.

Switch device

A structure and manufacturing process of a low dielectric constant interlayer insulating film used between wiring layers and semiconductor devices using such film are disclosed. The insulating film which can withstand in an actual process comprises an amorphous carbon fluoride film. A diamond like carbon film and a silicon excess layer are disposed on both sides of the amorphous carbon fluoride film to be inserted between the wiring layers, whereby adhesion to wiring and another insulating film contacting it is significantly enhanced. In addition, a silicon based insulating film is disposed and flattened on a multilayer film containing an amorphous carbon fluoride film buried with a wiring layer, and is used as a hard mask for anisotropically etching the diamond like carbon film and the amorphous carbon fluoride film with oxygen plasma to form a via hole.

Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film, and a method for manufacturing the semiconductor device

A metal film with high melting point containing such nitrogen as titanium nitride is disposed on the interface between an amorphous carbon fluoride film and a metal. A structure is obtained from the function of a nitrogen-containing metal film with high melting point which prevents fluorine dispersion, to prevent such problems as the reaction of a metal and fluorine at heating process and the following falling or swelling of the metal film can be solved. In addition, the heating process possible to introduce in the manufacturing steps allow to complete the LSI making process of a practical multilayer wiring structure on the basis of a low dielectric constant of amorphous carbon.

Semiconductor device capable of having amorphous carbon fluoride film of low dielectric constant as interlayer insulation material and method of manufacturing the same

There is provided a method of fabricating a semiconductor device having a multi-layered structure and including an interlayer insulating film composed of carbon family material, the method including the steps of (a) depositing an insulating film on a lower wiring layer, the insulating film being composed of carbon family material, (b) annealing the insulating film in hydrogen atmosphere at a first temperature equal to or greater than a temperature at which the insulating film has been deposited, and (c) forming an upper wiring layer on the insulating film. The method suppresses gas from being discharged out of an insulating film without an increase in dielectric constant, and prevents deposited films on the insulating film from being peeled off.

Method of fabricating semiconductor device

A semiconductor device, in which wiring layers are electrically isolated from each other by an insulating film which includes an amorphous carbon fluoride film insulating film containing carbon and fluorine as main components and the wiring layers are electrically connected to each other by a conductive material buried in a hole penetrating through the insulating film, is manufactured by selectively etching the amorphous carbon fluoride film. Moreover, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is formed on both of the amorphous carbon fluoride film and a side surface of said hole, or one of the amorphous carbon fluoride film and the side surface thereof.

Growing community of inventors

Minato-ku, Japan

Kazuhiko Endo