Sumitomo Electric Industries, Limited

Sony Corporation

Kazuhide Sumiyoshi

Takashi Kyono

Makoto Kiyama

Hiromu Shiomi

Koji Katayama

Yu Saitoh

Shinji Tokuyama

Nobuhiro Saga

Masaki Ueno

Seiji Nakahata

Yusuke Yoshizumi

Masahiro Adachi

Yohei Enya

Akihiro Hachigo

Takamichi Sumitomo

Tatsushi Hamaguchi

Katsunori Yanashima

Takatoshi Ikegami

Shimpei Takagi

Masaya Okada

Kazutaka Inoue

Takumi Yonemura

Kenya Nishiguchi

Takuji Yamamura

A semiconductor device includes a substrate, a semiconductor stacking portion formed on the substrate, a silicon nitride passivation film covering the surface of the semiconductor stacking portion, and oxygen atoms existing at an interface between the silicon nitride passivation film and the semiconductor stacking portion. The semiconductor stacking portion includes a plurality of nitride semiconductor layers. The interfacial oxygen content at the passivation film and stacking portion interface is 0.6×10oxygen atoms/cmor less.

Semiconductor device with silicon nitride passivation film

A method of manufacturing a high electron mobility transistor in a furnace, the method including steps of: forming a first SiN film on a surface of a semiconductor stack consisting of a nitride semiconductor and including a barrier layer by a low pressure chemical vapor deposition method at a first furnace temperature of 700&#xb0; C. or more and 900&#xb0; C. or less; forming an interface oxide layer on the first SiN film by moisture and oxygen in the furnace at a second furnace temperature of 700&#xb0; C. or more and 900&#xb0; C. or less and a furnace pressure to 1 Pa or lower; and forming a second SiN film on the interface oxide layer by the low pressure chemical vapor deposition method at a third furnace temperature of 700&#xb0; C. or more and 900&#xb0; C. or less.

Method of manufacturing high electron mobility transistor and high electron mobility transistor

A low pressure chemical vapor deposition (LPCVD) technique for nitride semiconductor materials includes steps of: setting a temperature in a furnace to be 750 to 900&#xb0; C.; substituting an atmosphere in the furnace to ammonia (NH); depositing a SiN film at an initial pressure by supplying di-chloro-silane (SiHCl); and subsequently depositing the SiN film at a deposition pressure that is higher than the initial pressure. The invention has a feature that the initial pressure is at least higher than 60% of the deposition pressure.

Process of forming silicon nitride (SiN) film and semiconductor device providing SiN film

A process of depositing a silicon nitride (SiN) film on a nitride semiconductor layer is disclosed. The process includes steps of: (a) loading an epitaxial substrate including the nitride semiconductor layer into a reaction furnace at a first temperature and converting an atmosphere in the furnace into nitrogen (N); (b) raising the temperature in the furnace to a second temperature while keeping pressure in the furnace at a first pressure higher than 30 kPa; (c) converting the atmosphere in the furnace to ammonia (NH) at the second temperature; and (d) beginning the deposition by supplying SiHClas a source gas for silicon (Si) at a second pressure lower than 100 Pa. A feature of the process is that a time span from when the temperature in the furnace reaches the critical temperature to the supply of SiHClis shorter than 20 minutes, where the first pressure becomes the equilibrium pressure at the critical temperature.

Process of forming silicon nitride film

A process of forming a silicon nitride film on a nitride semiconductor layer as a passivation film is disclosed. The process first sets a temperature lower than 500&#xb0; C. to load into a growth reactor, a wafer that provides the nitride semiconductor layer thereon. Then, the process raises the temperature to a deposition temperature higher than 750&#xb0; C. while replacing the atmosphere in the reactor with pure ammonia (NH), or a mixed gas of NHand Nwith a NHpartial pressure greater than 0.2, and sets the pressure higher than 3 kPa. Finally, with the pressure lower than 100 Pa and di-chloro-silane (SiHCl) supplied, the SiN is deposited on the nitride semiconductor layer.

Process of depositing silicon nitride (SiN) film on nitride semiconductor

A nitride semiconductor device is disclosed, where the nitride semiconductor device is a type of field effect transistor having a gate electrode and an insulating film covering the gate electrode. The gate electrode has stacked metals of nickel (Ni) and gold (Au), while, the insulating film is made of silicon nitride (Si). A feature of the gate electrode of the present invention is that the nickel layer contains silicon (Si) atoms at an atomic concentration from 0.01 at % to 10 at %.

Semiconductor device

In a group III nitride semiconductor device according to one aspect of the present invention, in a p-type group III nitride semiconductor region formed on a semi-polar plane substrate, the concentration of hydrogen (H) contained in the p-type group III nitride semiconductor region is 25% or less of the concentration of a p-type dopant therein, and the concentration of oxygen contained in the p-type group III nitride semiconductor region is 5&#xd7;10atoms/cmor lower, and an angle between a normal axis of a primary surface of the semi-polar plane substrate and a c-axis of the semi-polar plane substrate is not lower than 45 degrees and not higher than 80 degrees or not lower than 100 degrees and not higher than 135 degrees in a waveguide axis direction of the group III nitride semiconductor device.

Group III nitride semiconductor device, and method for fabricating group III nitride semiconductor device

A III-nitride semiconductor laser device is provided with a laser structure and an electrode. The laser structure includes a support base which includes a hexagonal III-nitride semiconductor and a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface. The electrode is provided on the semiconductor region. The semiconductor region includes a first cladding layer of a first conductivity type GaN-based semiconductor, a second cladding layer of a second conductivity type GaN-based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer.

Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and epitaxial substrate

Provided is a III nitride semiconductor electronic device having a structure capable of reducing leakage current. A laminateincludes a substrateand a III nitride semiconductor epitaxial film. The substrateis made of a III nitride semiconductor having a carrier concentration of more than 1&#xd7;10cm. The epitaxial structureincludes a III nitride semiconductor epitaxial film. A first faceof the substrateis inclined at an angle &#x3b8; of more than 5 degrees with respect to an axis Cx extending in a direction of the c-axis. A normal vector VN and a c-axis vector VC make the angle &#x3b8;. The III nitride semiconductor epitaxial filmincludes first, second and third regionsandarranged in order in a direction of a normal to the first face. A dislocation density of the third regionis smaller than that of the first region. A dislocation density of the second regionis smaller than that of the substrate

III nitride semiconductor electronic device, method for manufacturing III nitride semiconductor electronic device, and III nitride semiconductor epitaxial wafer

The present method of forming a nitride semiconductor epitaxial layer includes the steps of growing at least one layer of nitride semiconductor epitaxial layer on a nitride semiconductor substrate having a dislocation density lower than or equal to 1&#xd7;10cmwith a chemical decomposition layer interposed therebetween, the chemical decomposition layer being chemically decomposed at least with either a gas or an electrolytic solution, and decomposing the chemical decomposition layer at least with either the gas or the electrolytic solution at least either during or after the step of growing the nitride semiconductor epitaxial layer, thereby separating the nitride semiconductor epitaxial layer from the nitride semiconductor substrate. A high-quality nitride semiconductor epitaxial layer suffering less damage when separated from the nitride semiconductor substrate is thereby formed.

Growing community of inventors

Osaka, Japan

Kazuhide Sumiyoshi