Screen Holdings Co., Ltd.

Kazuhide Saito

Takashi Ota

Taiki Hinode

Kenji Kobayashi

Akihisa Iwasaki

Kenji Izumoto

Takemitsu Miura

Toshimitsu Namba

Kunio Yamada

Yasukatsu Kamihiro

In a substrate processing apparatus, an outer edge portion of a substrate in a horizontal state is supported from below by an annular substrate supporting part, and a lower surface facing part having a facing surface facing a lower surface of the substrate is provided inside the substrate supporting part. A gas ejection nozzle for ejecting heated gas toward the lower surface is provided in the lower surface facing part, and the substrate is heated by the heated gas when an upper surface of the rotating substrate is processed with a processing liquid ejected from an upper nozzle. Further, a lower nozzle is provided in the lower surface facing part, to thereby perform a processing on the lower surface with a processing liquid. Since the gas ejection nozzle protrudes from the facing surface, a flow of the processing liquid into the gas ejection nozzle can be suppressed during the processing.

Substrate processing apparatus and substrate processing method

In a substrate processing apparatus, a phosphoric acid aqueous solution is supplied to a processor, and a liquid collection from the processor is concurrently performed. Further, a silicon concentration is adjusted, to supply an adjusted processing liquid to the processor. Thus, a phosphoric acid aqueous solution film is formed on the substrate. The liquid film is heated by a heating device. The heating device has lamp heaters in a casing made of a silica glass. The phosphoric acid aqueous solution on the substrate is irradiated with infrared rays. A nitrogen gas flowing in a gas passage formed in the casing is discharged towards a position outside an outer periphery of the substrate.

Substrate processing apparatus and substrate processing method using substrate processing apparatus

A phosphoric acid aqueous solution in a production tank circulates a circulation system. The circulation system is configured to be switchable between a first state in which the phosphoric acid aqueous solution is circulated through a bypass pipe and a second state in which the phosphoric acid aqueous solution is circulated through a filter. When a silicon containing liquid is supplied to the production tank, the circulation system is switched to the first state. When silicon particles are uniformly dispersed in the phosphoric acid aqueous solution, the circulation system is switched to the second state. Alternatively, a filtration member is provided in the production tank. The silicon containing liquid is stored in the filtration member. The filtration member is dipped in the phosphoric acid aqueous solution stored in the production tank. The silicon containing liquid is permeated through the filtration member, and is mixed with the phosphoric acid aqueous solution.

A substrate processing method includes a phosphoric acid processing step of supplying a phosphoric acid aqueous solution, which contains silicon and has a silicon concentration lower than a saturation concentration, to a front surface of a substrate, a liquid volume reducing step of reducing a volume of the phosphoric acid aqueous solution on the substrate, after the phosphoric acid processing step, and a rinse replacing step of supplying a rinse liquid having a temperature lower than that of the phosphoric acid aqueous solution supplied to the front surface of the substrate in the phosphoric acid processing step to the front surface of the substrate covered with the phosphoric acid aqueous solution at least partially, after the liquid volume reducing step.

Substrate processing method

A substrate treatment method for treating a substrate including a first silicon nitride film provided on a front surface thereof and a silicon oxide film provided on the first silicon nitride film to remove the first silicon nitride film and the silicon oxide film from the substrate includes: a first phosphoric acid treatment step of supplying a phosphoric acid aqueous solution having a predetermined first concentration to the substrate held by a substrate holding unit to treat the substrate with the first concentration phosphoric acid aqueous solution for the removal of the first silicon nitride film; and a second phosphoric acid treatment step of supplying a phosphoric acid aqueous solution having a second concentration lower than the first concentration to the substrate to treat the substrate with the second concentration phosphoric acid aqueous solution for the removal of the silicon oxide film after the first phosphoric acid treatment step.

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Kyoto, Japan

Kazuhide Saito