Nec Corporation

W. R. Grace Co.-conn.

Kazuhide Saigo

Masayoshi Suzuki

Yuichi Mori

Yoshichi Hagiwara

Hiroshi Gokan

Yoshitake Ohnishi

Hiroshi Samukawa

Yasushi Saotome

Hiroshi Samukuaa

A photocurable gel suitable for articles such as printing plates, photoresists and the like is disclosed. The photocurable eel comprises (a) a polymer composition having isotactic polymethyl methacrylate moiety; and syndiotactic polymethyl methacrylate moiety; (b) a photopolymerizable ethylenically unsaturated compound; and (c) a photopolymerization initiator. The gel is solid at ambient temperature and is capable of undergoing reversible gel/sol transition by heating or cooling. Methods of preparing articles, as well as methods of fixing articles, which use the gel are also disclosed. Such methods include sealing or affixing component parts on an electronic circuit board.

Photocurable self-retainable gel, shaped article prepared therefrom,

A photocurable gel suitable for articles such as printing plates, photoresists and the like is disclosed. The photocurable gel comprises (a) a polymer composition having isotactic polymethyl methacrylate moiety; and syndiotactic polymethyl methacrylate moiety; (b) a photopolymerizable ethylenically unsaturated compound; and (c) a photopolymerization initiator. The gel is solid at ambient temperature and is capable of undergoing reversible gel/sol transition by heating or cooling. Methods of preparing articles, as well as methods of fixing articles, which use the gel are also disclosed. Such methods include sealing or affixing component parts on an electronic circuit board.

Disclosed is a novel novolak resin comprising structural units having a trimethylsilyl group. A resist material highly resistive to dry etching is obtained by adding a photosensitive diazo compound to this novolak resin. The resist material is useful in various lithography methods to form a positive resist pattern. This resist material is used in a pattern forming method of a two-layer type, in which a fine pattern is formed in a thin film of the resist material by lithography and then transferred into an underlying thick organic polymer layer by dry etching of the underlying layer with the resist pattern as mask. Curing of the resist pattern by irradiation with deep UV rays is effective for further improvement in the precision of the transferred pattern.

Silicon-containing novolak resin and resist material and pattern forming

A polymer having allyl groups each attached to a silicon atom serves as a resist material which is highly resistive to dry etching such as reactive sputter etching with oxygen and sensitive to electron beams, X-rays and deep UV rays. By the addition of a bis-azide compound known as a photosensitive cross-linking agent the resist material becomes sensitive also to UV and near UV rays. A very suitable polymer is obtained by polymerizing either a triallylsilane or an allylsilylstyrene or by copolymerizing an allylsilylstyrene with another ethylenic compound copolymerizable with styrene. This resist material is used in a pattern forming method of the two-layer type, in which a fine pattern is generated in a thin film of the resist material by lithography and then transferred into an underlying thick organic layer by dry etching of the thick organic layer with the resist pattern as a mask.

Resist material comprising polymer of allylsilyl compound and pattern

A method of forming fine patterns in the manufacture of microelectronic devices by using optical or electron-beam lithography and a dry etching technique such as reactive sputter etching with oxygen. The substrate surface is covered with a relatively thick organic layer, and a thin resist film is formed thereon. The material of the resist layer is a polymer or copolymer comprising trialkylsilyl group, dimethylphenylsilyl group or trialkoxysilyl group. The thickness of the resist film is so adjusted as to contain a sufficient number of trialkylsilyl, dimethylphenylsilyl or trialkoxysilyl groups per unit area of the resist pattern to thereby ensure high endurance of the resist to dry etching for etching the thick organic layer.

Growing community of inventors

Tokyo, Japan

Kazuhide Saigo