Mitsubishi Denki Kabushiki Kaisha

Kazuhide Kawabe

Masatoshi Kimura

Kaoru Motonami

Takeshi Iwamoto

Kakutaro Suda

Yasuhiro Ido

Hiroaki Sekikawa

Hideki Doi

Rui Toyota

A semiconductor device includes: an insulation layer; a fuse layer extending on the insulation layer in one direction and disconnected through light radiation to control a redundant circuit; a pseudo fuse layer on the insulation layer along at least one side of the fuse layer; another insulation layer covering the fuse layer and the pseudo fuse layer; and a protection film formed on another insulation layer and having an opening in a region opposite to the fuse layer. Fuse layers having a spacing of less than 4 &mgr;m or 4.5 to 5.5 &mgr;m. Such a structure allows a semiconductor device with a fuse layer capable of being disconnected reliably and providing a smaller blow trace.

Semiconductor device having a fuse layer

Growing community of inventors

Hyogo, Japan

Kazuhide Kawabe