Kabushiki Kaisha Toshiba

Toshiba Tec Kabushiki Kaisha

Other

Kazuhide Abe

Takashi Kawakubo

Kazuhiko Itaya

Toshihiko Nagano

Michihiko Nishigaki

Ryoichi Ohara

Takaaki Yasumoto

Kenya Sano

Tadahiro Sasaki

Naoko Yanase

Hiroshi Toyoda

Shuichi Komatsu

Atsuko Iida

Hiroshi Yoshida

Koji Yamakawa

Kazuhiro Eguchi

Noburu Fukushima

Motomasa Imai

Koji Sakui

Tomio Ono

Ryutaro Kusunoki

Masahiko Hasunuma

Hiroshi Tsurumi

Ryuichi Fujimoto

Mayumi Morizuka

Mitsuo Harata

Hironobu Shibata

Osamu Takagi

Kyoichi Suguro

Hideyuki Funaki

Hiroshi Yamada

Tomonori Aoyama

Isao Takasu

Tsuyoshi Hioki

Yasushi Tomizawa

Yuko Nomura

Isao Amemiya

Ryuichi Arai

Kumi Okuwada

Kazuya Nishihori

Taihei Nakada

Yoshikazu Tanabe

Mitsuaki Izuha

Yoshiaki Kitaura

Daisaburo Takashima

Tatsuo Shimizu

Akira Yoshioka

Hidetoshi Fujimoto

Keiichi Yamaguchi

Shouhei Kousai

Toshiyuki Naka

Tetsuya Ohno

Yasunobu Saito

Nobuyuki Itoh

Shiroh Saitoh

Mamoru Izumi

Takako Motai

Miki Yumoto

Junji Wadatsumi

Masaru Furukawa

Hisakazu Iizuka

Tomohisa Kimura

Shingo Masuko

Takeshi Uchihara

Syuzi Suzuki

Yukako Murakami

Tasuku Ono

Yoshiko Kohanawa

Tooru Kozu

Takeshi Ookubo

Yasunari Yagi

According to one embodiment, an inkjet recording head includes a plurality of ink pressure chambers arranged in a first direction, a nozzle communicating with each of the ink pressure chambers, a plurality of individual ink supply paths which are arranged in a second direction and communicate with one end of each of the ink pressure chambers, a plurality of individual ink discharge paths which are arranged in the second direction and communicate with another end of each of the ink pressure chambers, a plurality of actuators configured to apply pressure to ink in the ink pressure chambers, a common ink supply path communicating with an end of each of the individual ink supply paths, and a common ink discharge path communicating with an end of each of the individual ink discharge paths.

Inkjet recording head

The circuit simulating method according to an embodiment includes obtaining a first electrical characteristic value of a circuit element that operates under a predetermined operational condition. The circuit simulating method includes correcting the first electrical characteristic value based on a period in which application of an electrical stress equal to or higher than a reference value is stopped during operation of the circuit element.

Circuit simulating method, circuit simulating apparatus, and method of manufacturing semiconductor device

An ink jet head includes: a pressure chamber to be filled with ink formed in a pressure chamber structure, the pressure chamber in which an etching limiter made of a material different from a material of the pressure chamber structure is formed on an inner wall surface of the pressure chamber; a nozzle plate comprising a nozzle that leading to the pressure chamber and a movable range fitted to the etching limiter; and a flat driver comprising a piezoelectric body to operate the movable range and arranged on the nozzle plate.

Ink jet head having nozzle plate equipped with piezoelectric elements

A semiconductor device includes a GaN-based semiconductor layer, a source electrode on the GaN-based semiconductor layer, a drain electrode on the GaN-based semiconductor layer, and a gate electrode formed on the GaN-based semiconductor layer between the source electrode and the drain electrode. A first layer is in contact with the GaN-based semiconductor layer between the gate electrode and the drain electrode.

Semiconductor device

According to one embodiment, an inkjet head includes a nozzle plate including a first surface, a second surface opposite to the first surface, a through hole configured to make the first surface communicate with the second surface, and a cylindrical member integrally extending from the second surface by extending the through hole. An ink pressure chamber communicating with the cylindrical member and the through hole is provided on the second surface side of the nozzle plate. This inkjet head also includes an actuator which discharges ink in the ink pressure chamber from the through hole by displacing the nozzle plate.

Inkjet head having high mechanical strength and method of manufacturing the same

A semiconductor package of an embodiment includes: a semiconductor chip having a signal input terminal and a signal output terminal; and a cap unit that is formed on the semiconductor chip. The cap unit includes a concave portion forming a hollow structure between the semiconductor chip and the cap unit, a first through electrode electrically connected to the signal input terminal, and a second through electrode electrically connected to the signal output terminal. Of the inner side surfaces of the concave portion, a first inner side surface and a second inner side surface facing each other are not parallel to each other.

Semiconductor package having a cap unit with concave portion and method of manufacturing the same

A stimulated phonon emission device of an embodiment is provided with a first electroconductive type of semiconductor substrate of an indirect transition type semiconductor crystal, a second electroconductive type of well region provided in the semiconductor substrate, an element isolation region deeper than the well region, an element region surrounded by the element isolation region, and a field-effect transistor having a plurality of gate electrodes which are formed in the well region in the element region, are parallel to each other, and are arranged at a constant pitch and first electroconductive type of source region and drain region provided in the element regions on the both sides of the gate electrode.

Stimulated phonon emission device and oscillator, frequency filter, cooling device, light-receiving device, and light-emitting device comprising the stimulated phonon emission device

A semiconductor device according to an embodiment has: a semiconductor substrate; an acoustic resonator formed on the semiconductor substrate, having a semiconductor layer including impurity electrically isolated from the substrate by depletion layer and configured to resonate at a predetermined resonance frequency based on acoustic standing wave excited in the semiconductor layer; a temperature detector formed on the semiconductor substrate and configured to detect temperature of the semiconductor substrate; a calculating unit formed on the semiconductor substrate and configured to perform calculation of temperature compensation based on the temperature detected by the temperature detector, kind of the impurity and concentration of the impurity; and a controller formed on the semiconductor substrate and configured to control the resonance frequency based on a result of the calculation by the calculating unit.

Semiconductor device with a resonator using acoustic standing wave excited in semiconductor crystal

A semiconductor package according to embodiments includes: a semiconductor chip including a front electrode on a front surface thereof and a back electrode on a back surface thereof; a front-side cap portion including an air gap in a portion between the semiconductor chip and the front-side cap portion and a front-side penetrating electrode, and is positioned to face the front surface of the semiconductor chip; a back-side cap portion bonded with a first cap portion to hermetically seal the semiconductor chip, includes an air gap at least in a portion between the semiconductor chip and the back-side cap portion and a back-side penetrating electrode, and is positioned to face the back surface of the semiconductor chip; a front-side connecting portion which electrically connects the front electrode and the front-side penetrating electrode; and a back-side connecting portion which electrically connects the back electrode and the back-side penetrating electrode.

Semiconductor package and method of manufacturing the same

According to one embodiment, an acoustic semiconductor device includes an element unit, and a first terminal. The element unit includes an acoustic resonance unit. The acoustic resonance unit includes a semiconductor crystal. An acoustic standing wave is excitable in the acoustic resonance unit and is configured to be synchronously coupled with electric charge density within at least one portion of the semiconductor crystal via deformation-potential coupling effect. The first terminal is electrically connected to the element unit. At least one selected from outputting and inputting an electrical signal is implementable via the first terminal. The electrical signal is coupled with the electric charge density. The outputting the electrical signal is from the acoustic resonance unit, and the inputting the electrical signal is into the acoustic resonance unit.

Acoustic semiconductor device

According to an embodiment, the present invention provides a semiconductor device that is easily integrated with other electronic circuits and functions as an oscillator with high frequency accuracy. The semiconductor device includes: a semiconductor substrate; an element region; an element isolation region that surrounds the element region; a field effect transistor including a gate electrode that is formed on the element region, source and drain regions, and a channel region that is interposed between the source region and the drain region; gate, source, and drain terminals that are used to apply a voltage to the gate electrode, the source region, and the drain region, respectively; and an output terminal that is electrically connected to the channel region. When the threshold voltage of the field effect transistor is V, a gate voltage Vapplied between the source terminal and the gate terminal and a drain voltage Vapplied between the source terminal and the drain terminal satisfy the following relationship: V&#x3c;V&#x3c;V+V. Also, sn oscillating signal is output from the output terminal.

A method of manufacturing a light emitting device. The method includes: mounting a light emitting chip on a substrate; forming a transparent resin portion and a phosphor layer by using a liquid droplet discharging apparatus, the transparent resin portion being formed in a shape of a dome and covering the light emitting chip to fill an exterior thereof on the substrate, a phosphor layer containing phosphor and being formed on an exterior of the transparent resin portion close to at least a top side thereof; and forming a reflecting layer at a position exterior of the transparent resin portion and the phosphor layer close to the substrate.

Light emitting device and method of manufacturing the same

According to an embodiment, a power amplifier is provided with at least one first growth ring gate structure and multiple second growth ring gate structures. The first growth ring gate structure is bounded by a semiconductor layer and performs a power amplification operation. The multiple second growth ring gate structures are bounded by the semiconductor layer and are arranged adjacently around the first growth ring gate structure in a surrounding manner. When the first growth ring gate structure performs a power amplification operation, the multiple second growth ring gate structures are depleted by applying a reverse bias to the multiple second growth ring gate structures whereby the depleted multiple second growth ring gate structures isolate the first growth ring gate structure from a surrounding portion.

Power amplifier

A power amplifier according to the embodiments includes: a silicon substrate; an input terminal configured to receive an input of a RF signal; a power dividing unit configured to divide the RF signal into a first signal and a second signal; a phase modulating unit configured to modulate a phase of the second signal; an N well formed in the silicon substrate; a P well formed in the N well and configured to receive an input of the second signal of a modulated phase; a gate insulating film formed on the P well; a gate electrode formed on the gate insulating film and configured to receive an input of the first signal; source and drain electrodes formed on both sides of the gate electrode in the silicon substrate; and an output terminal configured to output a RF signal obtained from the drain electrode.

A piezoelectric-driven MEMS device can be fabricated reliably and consistently. The piezoelectric-driven MEMS device includes: a movable flat beam having a piezoelectric film disposed above a substrate with a recessed portion such that the piezoelectric film is bridged over the recessed portion, piezoelectric drive mechanisms disposed at both ends of the piezoelectric film and configured to drive the piezoelectric film, and a first electrode disposed at the center of the substrate-side of the piezoelectric film, and a second electrode disposed on a flat part of the recessed portion of the substrate and facing the first electrode of the movable flat beam.

Piezoelectric-driven MEMS device and method for manufacturing the same

Growing community of inventors

Kawasaki, Japan

Kazuhide Abe