Sony Corporation

Sony Group Corporation

Ntt Electronics Corporation

Jfe Steel Corporation

Sony Cororation

Kazufumi Watanabe

Yoshiaki Masuda

Tomoyuki Hirano

Hideshi Abe

Yuki Miyanami

Susumu Hiyama

Yoshiki Ebiko

Tomoharu Ogita

Masanari Yamaguchi

Yasushi Maruyama

Keishi Inoue

Kyohei Mizuta

Hirohisa Uchida

Hidetoshi Suzuki

Masashi Takada

Taiichiro Watanabe

Takatoshi Okabe

Atsushi Takada

Hiromi Okazaki

Keiji Ueda

Eiko Sone

Masayuki Uchiyama

Toshihisa Yajima

Masayoshi Kubozono

Akiyoshi Ando

A TIG welding filler metal is provided that has a composition including, by mass %, C: 0.20 to 0.80%, Si: 0.15 to 0.90%, Mn: 15.0 to 30.0%, P: 0.030% or less, S: 0.030% or less, Cr: 6.0 to 15.0%, and N: 0.120% or less, the balance being Fe and incidental impurities. Where necessary, the filler metal may contain one or two selected from Ni and Mo, may further contain one, or two or more selected from V, Ti, and Nb, and may additionally contain one, or two or more selected from Cu, Al, Ca, and REM. This configuration reduces the occurrence of welding cracks during TIG welding, that is, realizes excellent hot crack resistance, and allows for easy production of a weld joint having high strength and excellent cryogenic impact toughness.

TIG welding filler metal and method for producing weld joint using the same

A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.

Solid-state imaging device having optical black region, method of manufacturing the same, and electronic apparatus

A solid state imaging device including a semiconductor layer comprising a plurality of photodiodes, a first antireflection film located over a first surface of the semiconductor layer, a second antireflection film located over the first antireflection film, a light shielding layer having side surfaces which are adjacent to at least one of first and the second antireflection film.

Solid-state imaging device, method of manufacturing the same, and electronic equipment

The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

Solid-state imaging device with uneven structures and method for manufacturing the same, and electronic apparatus

Solid-state imaging device having improved light-collection, method of manufacturing the same, and electronic apparatus

Provided is a solid-state imaging device including: an effective pixel region of a substrate, effective pixels being arranged in the effective pixel region; an interconnection region around the effective pixel region, electrodes or interconnects being provided in the interconnection region; a peripheral region outside the interconnection region; and a film formed on the substrate. A cross-sectional height of the film in the effective pixel region is smaller than a cross-sectional height of the film in the interconnection region, and a cross-sectional height of the film in the peripheral region and a cross-sectional height of the film in at least a portion of a middle region between the effective pixel region and the interconnection region, the portion being closer to the interconnection region, are between the cross-sectional height of the film in the effective pixel region and the cross-sectional height of the film in the interconnection region.

Solid-state imaging device and method for producing the same, and electronic apparatus

Solid-state imaging device with uneven structures and the method for manufacturing the same, and electronic apparatus

Solid-state imaging device and method for manufacturing electronic apparatus

Solid-state imaging device and method for manufacturing the same, and electronic apparatus

Growing community of inventors

Kumamoto, Japan

Kazufumi Watanabe