Mitsubishi Electric Corporation

Stanley Electric Co., Ltd

Meijo University

Mitsubishi Electric Home Appliance Co., Ltd.

Kazufumi Tanaka

Shinichi Tanaka

Takahiro Matsumoto

Hiroyuki Kato

Yoshiaki Yamamoto

Hiroyasu Iwabuki

Shuta Ishikawa

Sadayuki Inoue

Isamu Akasaki

Tetsuya Takeuchi

Ikuro Suga

Tetsuya Matsuda

Naochika Horio

Sadayuki Matsumoto

Naoki Yamada

Makiko Kise

Miyuki Takeshita

Takuya Yabumoto

Tokiko Yamauchi

Kazuhiro Kameoka

Isamu Hirashiki

Kazutoshi Kurahashi

Yukio Kawata

Masanobu Ito

A series multiplex inverter includes a power conversion unit, a phase difference selection unit, a drive signal generation unit, and a drive signal output unit. The phase difference selection unit selects, from among a plurality of phase difference candidates, the phase difference between rectangular wave voltages from a plurality of single-phase inverters. The drive signal generation unit generates a plurality of drive signals that causes the different single-phase inverters to output a plurality of rectangular wave voltages sequentially out of phase by the phase difference selected by the phase difference selection unit. The drive signal output unit outputs the plurality of drive signals generated by the drive signal generation unit to the plurality of single-phase inverters.

Series multiplex inverter

A series multiplex inverter includes a power conversion unit, a drive signal generation unit, and a drive signal output unit. The drive signal generation unit generates n drive signals that cause different single-phase inverters of n single-phase inverters to output n rectangular wave voltages sequentially out of phase, where n is an integer of three or more. The drive signal output unit outputs the n drive signals to the n single-phase inverters in rotation that shifts, by p every m-fold time of half an output voltage period of the power conversion unit, the single-phase inverters corresponding one-to-one to the n drive signals in a combination of the n drive signals with different single-phase inverters of the n single-phase inverters, where m is a natural number and p is a natural number relatively prime to n or one.

When a plurality of storage batteries is used by connecting them in parallel, since the progress of degradation differs among the storage batteries, a power conversion system includes a degradation information acquisition device for acquiring the degradation information of the storage batteries, a temperature information acquisition device for detecting the temperature information of the storage batteries, and a control device for controlling the storage battery power converter based on the degradation information of the storage batteries by the degradation information acquisition device and the temperature information of the storage batteries by the temperature information acquisition device so that the degradation states of the plurality of the storage batteries can be matched.

Power conversion system

A semiconductor multilayer film mirror is configured such that a pair of an InAlN-based semiconductor film and a GaN-based semiconductor film is layered a plurality of times in a cyclic fashion and the InAlN-based semiconductor film has an In composition of less than 18 at %. The semiconductor multilayer film mirror includes a thin GaN cap layer formed on the InAlN-based semiconductor film and an AlGaN layer formed on the thin GaN cap layer between each pair of the InAlN-based semiconductor film and the GaN-based semiconductor film.

Semiconductor multilayer film mirror, vertical cavity type light-emitting element using the mirror, and methods for manufacturing the mirror and the element

There is provided an ultraviolet-emitting material that is formed so as to include MgZnO (0&#x3c;x&#x3c;0.55) with a rock-salt structure or BeMgZnCaO (0.45&#x2266;y+z&#x3c;1, 0&#x3c;x&#x2266;0.55) with a rock-salt structure.

Ultraviolet-emitting material and ultraviolet light source

A semiconductor switch circuit includes a plurality of switching units connected in series between a high-voltage node and a low-voltage node, and a plurality of diodes provided in association with the plurality of switching units, respectively. Respective cathodes of the plurality of diodes are connected to the plurality of switching units, respectively, and the anode of the diode associated with the switching unit connected to the low-voltage node receives a predetermined power supply voltage. Each switching unit includes a semiconductor switching device, a gate drive circuit driving the semiconductor switching device, and a DC-DC converter receiving a DC voltage from a cathode of the associated diode and supplying drive power to the gate drive circuit.

Semiconductor switch circuit

A semiconductor device includes a support substrate, an insulating layer provided on the support substrate, and a semiconductor element provided on the insulating layer. The insulating layer has a lower insulating layer consisting of amorphous boron nitride, and an upper insulating layer provided on the lower insulating layer and including amorphous boron nitride and an hexagonal system boron nitride (h-BN) particles.

Semiconductor device including h-BN insulating layer and its manufacturing method

A gate-power-supply device is provided with an inverter circuit, a transformer, and rectifier circuits. The device includes secondary-side parallel capacitors, connected in parallel to secondary-side coils of the transformer, for cancelling inductance components of the secondary-side coils at the drive frequency of the inverter circuit. The device includes a primary-side series capacitor, connected in series to a primary-side coil of the transformer, for cancelling the imaginary term (inductance component) of the combined impedance of the gate drivers, the rectifier circuits, the secondary-side parallel capacitors, the secondary-side coils, transformer cores and the primary-side coil, which are a load viewed from the inverter circuit.

Gate-power-supply device and semiconductor circuit breaker using same

In order to obtain a contactless power supply device which, even when a spatial gap between a primary winding and a secondary winding varies, is capable of not only accurately detecting whether or not the primary winding and the secondary winding come into the position opposite to each other, but also detecting how large the spatial gap between the primary winding and the secondary winding is created, the contactless power supply device is provided with a drive voltage detection unit which detects the drive voltage of an inverter circuit, a drive current detection unit which detects the drive current of the inverter circuit, and a primary component extraction unit which, from the drive voltage and the drive current, extracts a primary drive voltage and a primary drive current including the first order frequency-components having the same frequency as a drive frequency of the inverter circuit.

Contactless power supply device

A manufacture method for a ZnO based semiconductor device includes the steps of: (a) preparing a ZnO based semiconductor wafer including a ZnO based semiconductor substrate having a wurzeit structure with a +C plane on one surface and a &#x2212;C plane on an opposite surface, a first ZnO based semiconductor layer having a first conductivity type epitaxially grown above the +C plane of the ZnO based semiconductor substrate, and a second ZnO based semiconductor layer having a second conductivity type opposite to the first conductivity type epitaxially grown above the first semiconductor layer; and (b) wet-etching the ZnO based semiconductor wafer with acid etching liquid to etch the &#x2212;C plane of the ZnO based semiconductor substrate

Growing community of inventors

Chiyoda-ku, Japan

Kazufumi Tanaka