Advanced Lcd Technologies Development Center Co., Ltd.

Hitachi, Ltd.

Sharp Kabushiki Kaisha Corporation

Kabushiki Kaisha Ekisho Sentan Gijutsu Kaihatsu Center

Kazufumi Azuma

Masakiyo Matsumura

Yukihiko Nakata

Mitsuo Nakatani

Kazuo Nate

Masashi Goto

Takashi Ono

Yukio Taniguchi

Hitoshi Yokono

Tetsuya Ide

Tomoya Kato

Takahiko Endo

Atsushi Sasaki

Masahiro Tanaka

Tetsuya Okamoto

Takeshi Endo

Masaaki Okunaka

Naotoshi Akamatsu

Toshiaki Ohtani

Hideo Sugai

Shigeyuki Shimoto

Kenji Tasaka

Hajime Shirai

A plasma treatment apparatus generates a plasma in a treatment vessel by an electromagnetic wave radiated from an electromagnetic wave radiation portion into the treatment vessel to perform plasma treatment by the plasma. At least a part of a wall constituting the treatment vessel includes at least a part of an electromagnetic wave transmission path which transmits the electromagnetic wave.

Plasma treatment apparatus and plasma treatment method

A crystallization apparatus includes a light modulation element, and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface. The crystallization apparatus irradiates a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film. A curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 &#x3bc;m or below.

Crystallization apparatus, crystallization method, device, and light modulation element

A dehydrogenation treatment method which includes forming a hydrogenated amorphous silicon film above a non-heat-resistant substrate, and eliminating bonded hydrogen from the hydrogenated amorphous silicon film by irradiating an atmospheric thermal plasma discharge to the hydrogenated amorphous silicon film for a time period of 1 to 500 ms. The surface of the substrate is heated at a temperature of 1000 to 2000&#xb0; C. by irradiating the atmospheric thermal plasma discharge.

Method for dehydrogenation treatment and method for forming crystalline silicon film

An optical device comprises a first cylindrical lens array in which a plurality of first lens segments each having a first radius of curvature and a first width so as to divide laser light into a plurality of light components are arranged, and a plurality of second lens segments each having a second radius of curvature and a second width, and provided in at least one position of the first cylindrical lens array so as to be arranged between adjacent first lens segments.

Optical device and crystallization device

A method of crystallizing a semiconductor film including splitting a pulse laser beam oscillated from a laser oscillator, and synthesizing the split pulse laser beams after the split pulse laser beams have propagated through optical paths different in optical path length, modulating the synthesized pulse laser beam into a pulse laser beam by a phase modulating element, and irradiating a non-single-crystal film formed on a substrate with the laser beam to crystallize the non-single-crystal film. Splitting the pulse laser beam and synthesizing the split pulse laser beams are performed using at least three optical splitting/synthesizing units arranged in order, and include sequentially splitting one pulse laser beam split by one optical splitting/synthesizing unit by succeeding splitting/synthesizing unit, and synthesizing the other pulse laser beam split by one optical splitting/synthesizing unit with the other pulse laser beam split by preceding splitting/synthesizing unit.

Method of crystallizing semiconductor film

In a plasma processing apparatus, electromagnetic waves are radiated from slots of waveguides into a processing chamber via dielectric windows that are supported on beams, thereby generating a plasma. A substrate, which is an object of processing, is processed by the generated plasma. Dielectric plates are attached to those surfaces of the beams, which are opposed to the processing chamber. The thickness of each dielectric plate is set at &#xbd; or more of the intra-dielectric wavelength of the electromagnetic waves. Using the plasma processing apparatus, a large-area processing can uniformly be performed.

Plasma processing apparatus with dielectric plates and fixing member wavelength dependent spacing

Disclosed is a film-forming method, comprising supplying into a plasma processing chamber at least three kinds of gases including a silicon compound gas, an oxidizing gas, and a rare gas, the percentage of the partial pressure of the rare gas (Pr) based on the total pressure being not smaller than 85%, i.e., 85%&#x2266;Pr&#x3c;100%, and generating a plasma within the plasma processing chamber so as to form a film of silicon oxide on a substrate to be processed.

Thin-film forming method using silane and an oxidizing gas

A plasma processing apparatus comprises: a chamberhaving at least one opening and for generating plasma; a dielectric memberprovided to cover the opening air-tightly; at least one wave guideprovided in the exterior of the chamber such that the one end side opposes the dielectric member; an electromagnetic wave sourceprovided on the other end side of the wave guide; a plurality of holesprovided on a surface opposing the dielectric member of the wave guide; and hole area adjusting meansprovided in at least one of the above-mentioned holes so as to adjust the opening area of the hole.

Plasma processing apparatus

Film-forming method, method of manufacturing semiconductor device, semiconductor device, method of manufacturing display device, and display device

Troubles caused by contaminants in a magnetic disk apparatus are prevented by providing a monofunctional compound in a gas phase in the magnetic disk apparatus, said compound capable of undergoing polymerization reaction with hydroxyl groups present on the protective overcoat surfaces of a magnetic head and a magnetic disk and further capable of reacting with contaminants, thereby attaining a high reliability of the magnetic disk apparatus.

Magnetic disk apparatus

An organic thin film consisting essentially of an organic compound is formed on a substrate surface by vacuum vapor deposition by exposing the organic compound as a vapor source to a laser beam having an energy level corresponding to that of the chemical bond of the organic compound, thereby sputtering the organic compound onto a substrate surface in vacuum and forming the organic thin film thereon. When a light or radiation-sensitive organic compound is used as the vapor source, a light or radiation-sensitive resist film is formed. The thin film thus formed retains the original chemical structure of the vapor source, and has a good flatness. Resolvability of resist film is improved owing to the absence of pin holes and particulate matters. A resist film having a higher sensitivity and a better contrast is formed by heating the substrate during the vapor deposition.

Process for forming an organic thin film

A photosensitive resin composition comprising (a) 10 to 90 parts by weight of at least one polymerizable monomer of the formula: ##STR1## (R is defined in the specification), (b) 90 to 10 parts by weight of at least one compound selected from the group consisting of epoxy-acrylate resins, 1,2-polybutadiene resins, polyester resins and organopolysiloxanes, all having one or more acryloyloxy or methacryloyloxy groups in their molecular end or ends, and (c) 0.05 to 5 parts by weight of a photosensitizer based on 100 parts by weight of the sum of the components (a) and (b) shows slight shrinkage and the resulting coating film is good in adhesive properties and mechanical strength.

Photosensitive resin composition

A thin film of a-Si, SiO.sub.2 or Si.sub.3 N.sub.4 can be formed on a substrate using a starting material gas containing at least a polysilane of the formula Si.sub.n H.sub.2n+2 (n=2, 3 or 4) by a chemical vapor deposition method with irradiation with light with high film forming rate at lower temperatures.

Growing community of inventors

Yokohama, Japan

Kazufumi Azuma