Hitachi, Ltd.

Hitachi-high-technologies Corporation

Kazue Takahasi

Seiichiro Kanno

Saburo Kanai

Masamichi Sakaguchi

Youichi Itou

Ken Kitaoka

A vacuum processing method using an apparatus including a processing chamber disposed in a vacuum reactor and having plasma formed thereon, a sample stage having a sample placed on the upper plane thereof, and a gas introducing mechanism, wherein the sample stage includes a gas supply port for introducing thermal conductance gas between the sample stage and the sample to be processed. The method includes placing a dummy sample on the sample stage, introducing dust removal gas between the sample stage and the dummy sample, and removing particles attached to the sample stage via the flow of dust removal gas.

Vacuum processing method

The invention provides a vacuum processing apparatus having a function for removing particles on the surface of the sample stage in order to improve the yield of the sample being processed. The vacuum processing apparatus comprises a processing chamberdisposed in a vacuum reactor and having plasma formed in the interior thereof, a sample stageplaced below the processing chamberand having a sampleto be processed placed on the upper plane thereof for processing, and a gas introducing mechanism placed at an upper portion of the processing chamberand having introduction holes for introducing processing gas into the processing chamber, wherein the sample stagecomprises groovesand a gas supply portfor introducing thermal conductance gasbetween the sample stage and the sampleto be processed, and a mechanism for introducing dust removal gasthrough the gas supply portbetween the sample stageand the sampleto be processed or a dummy samplehaving substantially the same shape as the sample to be processed placed on the sample stagewithin the vacuum reactor, by which particlesattached to the sample stageare removed via hydrodynamic force by the dust removal gas

Vacuum processing apparatus and vacuum processing method

The present invention allows the electrostatically attracting electrode, whose size corresponds to large diameter wafers, to be fabricated easily and with precision. The first electrode is provided with a recess in which to install the second electrode. An insulating film is formed in the recess and then the second electrode is securely fitted in the recess. The assembled electrode is machined to make the surfaces of the first and second electrodes flush with each other in the same plane. The flat surfaces are covered with the sprayed electrostatic attraction film, which is the polished until it has a predetermined thickness. This fabrication process allows the electrostatic attraction electrode suitable to large-diameter wafers.

Electrostatically attracting electrode and a method of manufacture thereof

An electrostatic chuck for holding a substrate, including an electrode block which serves as an electrode for electrostatic attraction and a plurality of electrostatic attraction arranged on a surface of the electrode block. The electrostatic attraction members are disposed so as to attract the substrate electrostatically and to come in contact with the substrate. An insulating material covers the surface of the electrode block other than attraction surfaces of the electrostatic attraction members. Grooves made by the insulating material are provided between the individual electrostatic attraction members.

Growing community of inventors

Kudamatsu, Japan

Kazue Takahasi