Renesas Electronics Corporation

Kazuaki Tsuchiyama

Motoo Suwa

Ryuichi Oikawa

Tatsuaki Tsukuda

Hidemasa Takahashi

A width of each of a first signal terminal and a reference potential terminal formed in a first connection region of a core insulating layer constituting a flexible substrate is larger than a width of each of a first backside signal terminal and a backside reference potential terminal formed in a second connection region of the core insulating layer. In addition, a first separation distance between the first signal terminal and the reference potential terminal arranged adjacent to the first signal terminal is smaller than a second separation distance between the first backside signal terminal and the backside reference potential terminal arranged adjacent to the first backside signal terminal. An insulating film formed on a first surface of the core insulating layer at a position overlapping each of the first connection region and the second connection region covers the first connection region such that the second connection region is exposed.

Electronic device

Improve semiconductor device performance. The wiring WLA on which the semiconductor chip CHPin which the semiconductor lasers LD is formed is mounted has a stub STBin the vicinity of the mounting area of the semiconductor chip CHP

Semiconductor device

A performance of an electronic device is improved. An optical transceiver (electronic device) includes a semiconductor device electrically connected to a transmission line. In this semiconductor device, a resistor is arranged between a wiring electrically connected to the transmission line and a semiconductor chip having a semiconductor laser formed therein.

Growing community of inventors

Tokyo, Japan

Kazuaki Tsuchiyama