Toyota Jidosha Kabushiki Kaisha

Showa Denko K.k.

Nippon Steel Sumitomo Metal Corporation

Resonac Corporation

Kazuaki Seki

Kazuhiko Kusunoki

Hironori Daikoku

Kazuhito Kamei

Masayoshi Doi

Katsunori Danno

Motohisa Kado

Yutaka Kishida

Tatsuo Fujimoto

Hiroshi Tsuge

Takayuki Yano

Tomohiro Sato

Komomo Tani

A method for a SiC single crystal that allow prolonged growth to be achieved are provided. A method for producing a SiC single crystal in which a seed crystal substrate held on a seed crystal holding shaft is contacted with a Si&#x2014;C solution having a temperature gradient such that a temperature of the Si&#x2014;C solution decreases from an interior of the Si&#x2014;C solution toward a liquid level of the Si&#x2014;C solution, in a graphite crucible, to grow a SiC single crystal, wherein the method comprises the steps of: electromagnetic stirring of the Si&#x2014;C solution with an induction coil to produce a flow, and heating of a lower part of the graphite crucible with a resistance heater.

SiC single crystal production method and production apparatus

Provided is a method for producing a SiC single crystal which can suppress generation of SiC polycrystals. The method according to the present embodiment is in accordance with a solution growth method. The method for producing a SiC single crystal according to the present embodiment comprises a power-output increasing step, a contact step, and a growth step. In the power-output increasing step, high-frequency power output of an induction heating device is increased to crystal-growth high-frequency power output. In the contact step, a SiC seed crystal is brought into contact with a Si&#x2014;C solution. The high-frequency power output of the induction heating device in the contact step is more than 80% of the crystal-growth high-frequency power output. The temperature of the Si&#x2014;C solution in the contact step is less than a crystal growth temperature. In the growth step, the SiC single crystal is grown at the crystal growth temperature.

Method for producing SiC single crystal

A production method according an embodiment of the present invention is to produce a SiC single crystal by a solution growth technique, and includes a formation step and a growth step. In the formation step, material of Si&#x2014;C solution contained in a crucible is melted, and a Si&#x2014;C solution is formed. In the growth step, a SiC seed crystal attached to a bottom end of a seed shaft is brought into contact with the Si&#x2014;C solution, and a SiC single crystal is grown on a crystal growth surface of the SiC seed crystal. In the growth step, while a temperature of the Si&#x2014;C solution is being raised, the SiC single crystal is grown. The SiC single crystal production method according to the embodiment facilitates production of a SiC single crystal of a desired polytype.

Provided is a method for producing a SiC single crystal having a concave growth surface and containing no inclusions, even when conducting large diameter crystal growth. This is achieved by a method for producing a SiC single crystal in which a seed crystal substrate held on a seed crystal holding shaft is contacted with a Si&#x2014;C solution having a temperature gradient such that the temperature decreases from the interior toward the liquid level, to cause crystal growth of a SiC single crystal, wherein the seed crystal holding shaft has a shaft portion and a seed crystal holding portion at the bottom end of the shaft portion, and the ratio of the diameter Dof the shaft portion to the diameter Dof the seed crystal holding portion (D/D) is no greater than 0.28.

The present invention provides a method of raising the rate of reduction of the dislocation density accompanying growth of an SiC single crystal to counter the increase in the threading screw dislocations formed near the interface of the seed crystal and grown SiC single crystal and thereby produce an SiC single-crystal ingot with a small threading screw dislocation density from the initial stage of growth. The present invention is a method for producing a silicon carbide single-crystal ingot growing a silicon carbide single crystal on a growth face of a seed crystal consisting of a silicon carbide single crystal by a physical vapor transport method so as to produce a silicon carbide single-crystal ingot, the method for producing a silicon carbide single-crystal ingot comprising forming step bunching with heights of steps of 10 &#x3bc;m to 1 mm and spans of terraces of 200 &#x3bc;m to 1 mm on the growth face of the seed crystal and making the silicon carbide single crystal grow on the growth face of the seed crystal by the physical vapor transport method.

Method for producing silicon carbide single-crystal ingot and silicon carbide single-crystal ingot

A method for producing a SiC single crystal by a solution process is provided, which allows generation of miscellaneous crystals to be reduced. Method for producing a SiC single crystal wherein a crucible has thickness Lu in horizontal direction at same height as liquid level of Si&#x2014;C solution, and thickness Ld in horizontal direction at same height as bottom inner wall, Ld/Lu is 2.00 to 4.21, and thickness in horizontal direction of crucible monotonously increases between Lu and Ld from Lu toward Ld, wall thickness of crucible is 1 mm or greater, bottom thickness Lb in vertical direction of crucible is between 1 mm and 15 mm, bottom outer wall of crucible has flat section with area of 100 mmor greater, depth of Si&#x2014;C solution from bottom inner wall is 30 mm or greater, and method includes heating and electromagnetic stirring Si&#x2014;C solution with high-frequency coil.

Growing community of inventors

Futtsu, Japan

Kazuaki Seki