Nitto-denko Corporation

Nitto Electric Industrial Co., Ltd.

Kazuaki Sasa

Hironobu Machinaga

Toshitaka Nakamura

Yusuke Yamamoto

Yoshihiro Hieda

Kazuhiko Miyauchi

Takehiro Ui

Hiroichi Ukei

Kazuto Yamagata

Kazunori Kawamura

Yuya Kitagawa

Keiko Toyozawa

Tomohiko Maeda

Tomotake Nashiki

Nozomi Fujino

Daiki Kato

Eri Ueda

Toshihiko Sugimoto

Minoru Kanatani

Suguru Yamamoto

Tomohiro Takeyasu

Tomoya Matsuda

Yuki Takeda

For the purpose of providing an electromagnetic wave absorber usable for radar having a high revolution and sufficiently adaptable to a plurality of radars different in frequency, the bandwidth of a frequency band in which an electromagnetic wave absorption amount is not less than 20 dB is not less than 2 GHz, within a frequency band of 60 to 90 GHz.

Electromagnetic wave absorber

For the purpose of providing an electromagnetic wave absorber capable of holding excellent performance over a long period of time, the electromagnetic wave absorber includes: a dielectric layer B including a polymer film and having a first surface and a second surface; a resistive layer A formed on the first surface of the dielectric layer Band containing indium tin oxide as a main component; and an electrically conductive layer C formed on the second surface of the dielectric layer B and having a sheet resistance lower than that of the resistive layer A, wherein the indium tin oxide in the resistive layer A contains 20 to 40 wt. % of tin oxide based on the total weight of the indium tin oxide.

Electromagnetic wave absorber and molded article equipped with electromagnetic wave absorber

There is provided a transparent conductive film achieving low resistance characteristics of a transparent conductive layer. The present invention provides a transparent conductive film including: a polymer film substrate; and a transparent conductive layer formed on at least one surface of the polymer film substrate by means of a sputtering method using a sputtering gas including argon, wherein an existing atomic amount of argon atoms in the transparent conductive layer is 0.24 atomic % or less; an existing atomic amount of hydrogen atoms in the transparent conductive layer is 13&#xd7;10atoms/cmor less; and the transparent conductive layer has a specific resistance of 1.1&#xd7;10&#x3a9;&#xb7;cm or more and 2.8&#xd7;10&#x3a9;&#xb7;cm or less.

Transparent conductive film and method for producing the same

A transparent conductive film, includes: an organic polymer film substrate; at least one undercoat layer formed on the organic polymer film substrate by a dry process; and a transparent conductive coating provided on at least one surface of the organic polymer film substrate with the undercoat layer interposed therebetween, wherein the transparent conductive coating is a crystalline coating of an indium-based complex oxide having a content of a tetravalent metal element oxide of 7 to 15% by weight as calculated by the formula {(the amount of the tetravalent metal element oxide)/(the amount of the tetravalent metal element oxide+the amount of indium oxide)}&#xd7;100(%), the transparent conductive coating has a thickness in the range of 10 to 40 nm, and the transparent conductive coating has a specific resistance of 1.3&#xd7;10to 2.8&#xd7;10&#x3a9;&#xb7;cm.

Transparent conductive film and production method therefor

A transparent conductive film includes a film base, and a polycrystalline layer of indium tin oxide formed on the film base. The polycrystalline layer has a gradient of a concentration of tin oxide in a thickness direction thereof. A maximum value of the concentration of tin oxide in the thickness direction of the polycrystalline layer is 6 wt % to 12 wt %. The polycrystalline layer has a thickness of 10 nm to 35 nm. An average value of maximum sizes of crystal grains composing the polycrystalline layer is 380 nm to 730 nm.

Transparent conductive film

A method for producing a transparent conductive film includes:

Production method for transparent conductive film

The transparent conductive film of the invention includes a transparent conductive coating provided on at least one surface of an organic polymer film substrate, wherein the transparent conductive coating is a crystalline coating of an indium-based complex oxide having a tetravalent metal oxide content of 7 to 15% by weight as calculated by the formula {(the amount of the tetravalent metal element oxide)/(the amount of the tetravalent metal element oxide+the amount of indium oxide)}&#xd7;100 (%), has a thickness of 10 to 40 nm and a specific resistance of 1.3&#xd7;10to 2.8&#xd7;10&#x3a9;&#xb7;cm, has main X-ray diffraction peaks corresponding to (222) and (440) planes, and has a ratio (I/I) of (440) peak intensity to (222) peak intensity of less than 0.2. The transparent conductive film of the invention has a crystalline thin coating with a low level of specific resistance and surface resistance.

A transparent conductive film includes a transparent conductive coating provided on at least one surface of an organic polymer film substrate, wherein the transparent conductive coating is a crystalline coating of an indium-based complex oxide having a content of a tetravalent metal element oxide of 7 to 15% by weight calculated by the formula {(the amount of the tetravalent metal element oxide)/(the amount of the tetravalent metal element oxide+the amount of indium oxide)}=100(%), has a thickness in the range of more than 40 to 200 nm, a specific resistance of 1.2&#xd7;10to 2.0&#xd7;10&#x3a9;&#xb7;cm, main X-ray diffraction peaks corresponding to (222) and (440) planes and has a ratio (I/I) of (440) peak intensity (I) to (222) peak intensity (I) of less than 0.3, and has an internal stress of 700 MPa or less as determined by an X-ray stress measurement method.

A transparent conductive laminate having a completely crystallized, transparent conductive layer on a substrate comprising an organic polymer molding, and a process for producing the same. The transparent conductive layer is excellent in transparency and wet heat confidence and is not excessively low in specific resistivity. The transparent conductive laminate includes a substrate comprising an organic polymer molding having formed thereon a completely crystallized, transparent conductive layer comprising an In.Sn composite oxide having an amount of Sn atom of 1 to 6% by weight based on the total weight of In atom and Sn atom and having a film thickness of 15 to 50 nm, a Hall mobility of 30 to 45 cm/V&#xb7;S, and a carrier density of from 2&#xd7;10/cmto 6&#xd7;10/cm.

Transparent conductive laminate and process of producing the same

A transparent conductive laminate having a completely crystallized, transparent conductive layer on a substrate comprising an organic polymer molding, and a process for producing the same. The transparent conductive layer is excellent in transparency and wet heat confidence and is not excessively low in specific resistivity. The transparent conductive laminate includes a substrate comprising an organic polymer molding having formed thereon a completely crystallized, transparent conductive layer comprising an In&#x2014;Sn composite oxide having an amount of Sn atom of 1 to 6% by weight based on the total weight of In atom and Sn atom and having a film thickness of 15 to 50 nm, a Hall mobility of 30 to 45 cm/V-S, and a carrier density of from 2&#xd7;10/cmto 6&#xd7;10/cm.

In a transparent laminate, n thin-film units (n=3 or 4) are laminated unit by unit successively on a surface of a substrate, and a high-refractive-index transparent thin film is deposited on a surface of the laminate of the n thin-film units, each of the n thin-film units consisting of a high-refractive-index thin film and a silver transparent conductive thin film. When the silver transparent conductive thin films are deposited by a vacuum dry process, the temperature T(K) of the transparent substrate at the time of film deposition is set to be in a range 340&#x2266;T&#x2266;410, whereby the transparent laminate having a standard deviation of visible light transmittance which is not larger than 5% in a wave range of from 450 to 650 nm can be produced.

Transparent laminate, method for producing the same, and plasma display panel

A transparent laminate is constituted by a transparent substrate, a low refractive index transparent thin film formed on a surface of the transparent substrate, between three and five combination layers laminated successively on a surface of the first low refractive index transparent thin film, another high refractive index transparent thin film formed on a surface of the combination layers, and an outermost layer. The combination layers has high refractive index transparent thin films and silver type transparent electrical conductor thin films, each combination layer having one high refractive index transparent thin film and one silver type transparent electrical conductor thin film. The outermost layer is stuck through a transparent adhesive agent layer onto a surface of the high refractive index transparent thin film farthest from the transparent substrate. The outermost layer is at least one of selected from the group of consisting of an anti-reflection film, an anti-mirroring film and a low reflection anti-mirroring film. The low refractive index transparent thin film is an optically transparent thin film having a refractive indexing in a range of 1.3 to 1.6 and each of the high refractive index transparent thin film is an optically transparent thin film having a refractive index n in a range of from 1.9 to 2.5.

Transparent laminate and plasma display panel filter utilizing same

A method of sticking a transparent electromagnetic wave shield film onto a front surface of a plasma display panel is disclosed. The plasma display panel has a level difference in a thickness direction thereof. The plasma display panel is mounted on an attachment adapted to an outer shape of the plasma display. The level difference is eliminated apparently, and the transparent electromagnetic wave shield film is stuck onto the front surface of the plasma display panel.

Method of sticking transparent electromagnetic wave shield film

A filter for a plasma display panel wherein the filter has a laminated body, as a constituent element, in which n units (3&lE;n&lE;10) each consisting of a metallic oxide film and a silver transparent electric-conductor film are successively laminated unit after unit on a surface of a transparent film base, and a metallic oxide film is formed on the units as an outermost layer of the laminated body, each metallic oxide film having optical transparency of a refractive index of 1.5 to 2.7, each silver transparent electric-conductor film having a thickness set substantially to a fixed value in a range of from 5 to 20 nm, each of the metallic oxide film put directly on the surface of the base and the outermost-layer metallic oxide film having a thickness 5/2 (1&plusmn;0.15) times as large as the thickness of each silver transparent electric-conductor film, each of the other metallic oxide films located halfway between the metallic oxide film put directly on the surface of the base and the outermost-layer metallic oxide film having a thickness 5 (1&plusmn;0.15) times as large as the thickness of each silver transparent electric-conductor film.

Filter for plasma display panel

There is provided a transparent laminate which comprises a transparent substrate, and four to five units each of a high refractive index transparent film and a silver type transparent electrical conductor film. The units are laminated successively on a surface of the transparent substrate, and one high refractive index transparent film is further disposed as an outermost layer. The high refractive index transparent film is an optically transparent film having a refractive index of from 1.5 to 2.7. The silver type transparent electrical conductor film has a thickness in a range of from 5 to 20 nm. A thickness of the silver type transparent electrical conductor film disposed in a first layer with reference to the transparent substrate is substantially equal to a thickness of the silver type transparent electrical conductor film in an outermost layer with reference to the transparent substrate. A thickness of the silver type transparent electrical conductor film in each of other layers is 3/2(1&plusmn;0.2) times as large as the thickness of the silver type transparent electrical conductor film in the first layer. A thickness of the high refractive index transparent film in a first layer with reference to the transparent substrate is substantially equal to a thickness of the high refractive index transparent film in an outermost layer with reference to the transparent substrate and is 7/2(1&plusmn;0.2) times as large as the thickness of the silver type transparent electrical conductor film in the first layer. The thickness of the high refractive index transparent film in each of other layers is 7 (1&plusmn;0.2) times as large as the thickness of the silver type transparent electrical conductor film in the first layer.

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Ibaraki, Japan

Kazuaki Sasa